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SW45N60K2-VB Product details
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1. **Product Introduction**
**SW45N60K2-VB** is a high-performance N-channel MOSFET in TO247 package with excellent electrical characteristics and high reliability. The maximum drain-source voltage (VDS) of this MOSFET is 600V, which is suitable for use in medium and high voltage power conversion applications. The maximum gate-source voltage (VGS) is ±30V, which supports standard drive voltage. The threshold voltage (Vth) is 3.5V, ensuring that it can work reliably under common control voltages. **SW45N60K2-VB** has an on-resistance (RDS(ON)) of 60mΩ (VGS=10V), which has low conduction loss and is suitable for high-efficiency applications. The maximum drain current (ID) is 47A, which can carry higher currents and meet the needs of most industrial applications. The use of **SJ_Multi-EPI (Super Junction Multi-Epitaxy) technology** can further reduce the on-resistance and improve the energy efficiency of the system, especially for high-power switching applications.
**SW45N60K2-VB** is a high-performance N-channel MOSFET in TO247 package with excellent electrical characteristics and high reliability. The maximum drain-source voltage (VDS) of this MOSFET is 600V, which is suitable for use in medium and high voltage power conversion applications. The maximum gate-source voltage (VGS) is ±30V, which supports standard drive voltage. The threshold voltage (Vth) is 3.5V, ensuring that it can work reliably under common control voltages. **SW45N60K2-VB** has an on-resistance (RDS(ON)) of 60mΩ (VGS=10V), which has low conduction loss and is suitable for high-efficiency applications. The maximum drain current (ID) is 47A, which can carry higher currents and meet the needs of most industrial applications. The use of **SJ_Multi-EPI (Super Junction Multi-Epitaxy) technology** can further reduce the on-resistance and improve the energy efficiency of the system, especially for high-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **Detailed parameter description**
- **Model**: SW45N60K2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 47A
- **Operating temperature range**: -55°C to 150°C
- **Process technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- **Maximum power consumption**: 90W (the specific value varies according to the heat dissipation conditions)
- **Switching speed**: moderate, suitable for medium and high frequency switching applications
- **Application**: suitable for power conversion, inverter, motor drive, power management and other fields
- **Model**: SW45N60K2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 60mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 47A
- **Operating temperature range**: -55°C to 150°C
- **Process technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- **Maximum power consumption**: 90W (the specific value varies according to the heat dissipation conditions)
- **Switching speed**: moderate, suitable for medium and high frequency switching applications
- **Application**: suitable for power conversion, inverter, motor drive, power management and other fields
Domain and module applications：
3. **Application fields and module examples**
**SW45N60K2-VB** MOSFET is widely used in fields requiring high voltage, high power conversion and high efficiency due to its high voltage tolerance, low on-resistance and high current carrying capacity. The following are some typical application fields and modules:
- **Power converter**: This MOSFET is suitable for **AC-DC converter**, **DC-DC converter** and **switching power supply (SMPS)**, especially in high voltage application scenarios. The 600V VDS and low RDS(ON) ensure efficient power conversion and low energy loss, which can meet the requirements of electronic products for efficient and stable power supply systems.
- **Motor drive**: SW45N60K2-VB is widely used in **motor drivers**, especially for **brushless DC motor (BLDC) drivers** and **stepper motor drivers**. Its high current capability and low conduction loss make motor control more efficient, suitable for scenarios such as industrial automation, robot control and power tools.
- **Inverter**: Due to its high voltage and high current carrying capacity, the SW45N60K2-VB is ideal for use in **solar inverter** and **UPS (uninterruptible power supply)** systems. It can effectively handle high currents and convert DC power to AC power, ensuring efficient operation of equipment, especially in renewable energy and energy storage systems.
- **LED driver**: This MOSFET is suitable for **LED driver**, and its low RDS(ON) can effectively reduce power loss, which is of great significance in efficient lighting systems. It is suitable for commercial, industrial and lighting control applications, ensuring long LED life and high energy efficiency.
- **Battery Management System (BMS)**: The SW45N60K2-VB can be applied to **Battery Management System** (BMS), especially high voltage battery management, such as charge and discharge control in **Electric Vehicles (EV)** and **Energy Storage Systems**. Its low on-resistance and high current capability help optimize the battery's operating efficiency and extend its battery life.
- **High-power switch control**: Due to its low on-resistance and high current carrying capacity, SW45N60K2-VB can also be widely used in high-power switch control systems such as **power amplifiers**, **high-frequency switching power supplies** and **laser drive circuits**.
In summary, **SW45N60K2-VB** MOSFET is an ideal high-voltage, low-loss switching device for power conversion, motor drive, inverter, LED drive, battery management and high-power switching applications. Its high voltage tolerance and excellent switching performance make it an efficient and reliable key component in modern power electronic systems.
**SW45N60K2-VB** MOSFET is widely used in fields requiring high voltage, high power conversion and high efficiency due to its high voltage tolerance, low on-resistance and high current carrying capacity. The following are some typical application fields and modules:
- **Power converter**: This MOSFET is suitable for **AC-DC converter**, **DC-DC converter** and **switching power supply (SMPS)**, especially in high voltage application scenarios. The 600V VDS and low RDS(ON) ensure efficient power conversion and low energy loss, which can meet the requirements of electronic products for efficient and stable power supply systems.
- **Motor drive**: SW45N60K2-VB is widely used in **motor drivers**, especially for **brushless DC motor (BLDC) drivers** and **stepper motor drivers**. Its high current capability and low conduction loss make motor control more efficient, suitable for scenarios such as industrial automation, robot control and power tools.
- **Inverter**: Due to its high voltage and high current carrying capacity, the SW45N60K2-VB is ideal for use in **solar inverter** and **UPS (uninterruptible power supply)** systems. It can effectively handle high currents and convert DC power to AC power, ensuring efficient operation of equipment, especially in renewable energy and energy storage systems.
- **LED driver**: This MOSFET is suitable for **LED driver**, and its low RDS(ON) can effectively reduce power loss, which is of great significance in efficient lighting systems. It is suitable for commercial, industrial and lighting control applications, ensuring long LED life and high energy efficiency.
- **Battery Management System (BMS)**: The SW45N60K2-VB can be applied to **Battery Management System** (BMS), especially high voltage battery management, such as charge and discharge control in **Electric Vehicles (EV)** and **Energy Storage Systems**. Its low on-resistance and high current capability help optimize the battery's operating efficiency and extend its battery life.
- **High-power switch control**: Due to its low on-resistance and high current carrying capacity, SW45N60K2-VB can also be widely used in high-power switch control systems such as **power amplifiers**, **high-frequency switching power supplies** and **laser drive circuits**.
In summary, **SW45N60K2-VB** MOSFET is an ideal high-voltage, low-loss switching device for power conversion, motor drive, inverter, LED drive, battery management and high-power switching applications. Its high voltage tolerance and excellent switching performance make it an efficient and reliable key component in modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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