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SW38N65K2-VB Product details
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1. **Product Introduction**
**SW38N65K2-VB** is a high voltage N-channel MOSFET in TO247 package, suitable for various power conversion and power management applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which enables it to withstand higher voltages and is suitable for high voltage applications in industrial, consumer electronics and power systems. Its maximum gate-source voltage (VGS) is ±30V, supporting a standard drive voltage range. The threshold voltage (Vth) is 3.5V, ensuring that it can operate under common power control voltages. **SW38N65K2-VB** has an on-resistance (RDS(ON)) of 75mΩ (at VGS=10V), which is suitable for applications that require lower conduction losses. The maximum drain current (ID) is 47A, allowing it to operate stably in high power environments. Using **SJ_Multi-EPI (Super Junction Multi-Epitaxy) technology**, this MOSFET provides a lower on-resistance and effectively improves power conversion efficiency.
**SW38N65K2-VB** is a high voltage N-channel MOSFET in TO247 package, suitable for various power conversion and power management applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which enables it to withstand higher voltages and is suitable for high voltage applications in industrial, consumer electronics and power systems. Its maximum gate-source voltage (VGS) is ±30V, supporting a standard drive voltage range. The threshold voltage (Vth) is 3.5V, ensuring that it can operate under common power control voltages. **SW38N65K2-VB** has an on-resistance (RDS(ON)) of 75mΩ (at VGS=10V), which is suitable for applications that require lower conduction losses. The maximum drain current (ID) is 47A, allowing it to operate stably in high power environments. Using **SJ_Multi-EPI (Super Junction Multi-Epitaxy) technology**, this MOSFET provides a lower on-resistance and effectively improves power conversion efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **Detailed parameter description**
- **Model**: SW38N65K2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 47A
- **Operating temperature range**: -55°C to 150°C
- **Process technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- **Maximum power consumption**: 150W (varies according to different heat dissipation conditions)
- **Switching speed**: moderate, suitable for medium frequency to high frequency switching applications
- **Application**: suitable for power conversion, industrial control, power management and other fields
- **Model**: SW38N65K2-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 47A
- **Operating temperature range**: -55°C to 150°C
- **Process technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- **Maximum power consumption**: 150W (varies according to different heat dissipation conditions)
- **Switching speed**: moderate, suitable for medium frequency to high frequency switching applications
- **Application**: suitable for power conversion, industrial control, power management and other fields
Domain and module applications：
3. **Application fields and module examples**
**SW38N65K2-VB** MOSFET is suitable for power electronics applications that require high voltage tolerance, high efficiency and low loss due to its excellent high-voltage performance, low on-resistance and high current carrying capacity. The following are some typical application fields and modules:
- **Power conversion equipment**: This MOSFET is widely used in **AC-DC converters**, **DC-DC converters** and **high-frequency power modules**. Its maximum drain-source voltage of 650V makes it suitable for high-voltage power systems, and its low on-resistance ensures low power loss under high loads, improving energy efficiency, especially for applications that require efficient conversion.
- **Motor control**: In **motor drives**, especially in **brushless DC motor (BLDC) drives** and **stepper motor drives**, SW38N65K2-VB can provide low conduction losses and high current carrying capacity, making the motor run more efficiently. Suitable for power tools, home appliances and industrial automation systems.
- **Inverter**: Due to its high voltage tolerance and good conductivity, this MOSFET is ideal in **solar inverter** and **UPS (uninterruptible power supply) systems**. In these devices, it helps improve conversion efficiency and ensures stable operation of the system under high load.
- **Switching Power Supply Module**: The SW38N65K2-VB is an ideal choice for **switching power supply** (SMPS) applications, especially in power modules that require high efficiency and low switching losses. It can be used in power systems of various voltage levels, including communication equipment power supplies, computer power supplies, and industrial control system power supplies.
- **High-voltage Battery Management**: In **battery management systems (BMS)**, this MOSFET can be used for efficient charging and discharging management, especially in electric vehicles (EVs) and energy storage systems. It can effectively handle large currents, help optimize the battery charging and discharging process and extend battery life.
- **High-voltage control applications**: SW38N65K2-VB is suitable for a variety of high-voltage power management and control modules, such as **power amplifiers**, **laser drive circuits** and other devices that require high voltage tolerance and precise control.
- **LED drive and lighting systems**: Due to its low on-resistance and high operating voltage, SW38N65K2-VB is widely used in **LED driver power supplies**. It provides good current regulation and high efficiency, enabling energy-saving and efficient control in commercial and industrial lighting applications.
In summary, **SW38N65K2-VB** MOSFET is suitable for a variety of high-voltage, high-power electronic applications, especially in power conversion, motor drive, inverter, switching power supply, LED drive and battery management. Its high voltage tolerance and low on-resistance make it an ideal choice for these power-intensive systems, providing excellent performance and high efficiency.
**SW38N65K2-VB** MOSFET is suitable for power electronics applications that require high voltage tolerance, high efficiency and low loss due to its excellent high-voltage performance, low on-resistance and high current carrying capacity. The following are some typical application fields and modules:
- **Power conversion equipment**: This MOSFET is widely used in **AC-DC converters**, **DC-DC converters** and **high-frequency power modules**. Its maximum drain-source voltage of 650V makes it suitable for high-voltage power systems, and its low on-resistance ensures low power loss under high loads, improving energy efficiency, especially for applications that require efficient conversion.
- **Motor control**: In **motor drives**, especially in **brushless DC motor (BLDC) drives** and **stepper motor drives**, SW38N65K2-VB can provide low conduction losses and high current carrying capacity, making the motor run more efficiently. Suitable for power tools, home appliances and industrial automation systems.
- **Inverter**: Due to its high voltage tolerance and good conductivity, this MOSFET is ideal in **solar inverter** and **UPS (uninterruptible power supply) systems**. In these devices, it helps improve conversion efficiency and ensures stable operation of the system under high load.
- **Switching Power Supply Module**: The SW38N65K2-VB is an ideal choice for **switching power supply** (SMPS) applications, especially in power modules that require high efficiency and low switching losses. It can be used in power systems of various voltage levels, including communication equipment power supplies, computer power supplies, and industrial control system power supplies.
- **High-voltage Battery Management**: In **battery management systems (BMS)**, this MOSFET can be used for efficient charging and discharging management, especially in electric vehicles (EVs) and energy storage systems. It can effectively handle large currents, help optimize the battery charging and discharging process and extend battery life.
- **High-voltage control applications**: SW38N65K2-VB is suitable for a variety of high-voltage power management and control modules, such as **power amplifiers**, **laser drive circuits** and other devices that require high voltage tolerance and precise control.
- **LED drive and lighting systems**: Due to its low on-resistance and high operating voltage, SW38N65K2-VB is widely used in **LED driver power supplies**. It provides good current regulation and high efficiency, enabling energy-saving and efficient control in commercial and industrial lighting applications.
In summary, **SW38N65K2-VB** MOSFET is suitable for a variety of high-voltage, high-power electronic applications, especially in power conversion, motor drive, inverter, switching power supply, LED drive and battery management. Its high voltage tolerance and low on-resistance make it an ideal choice for these power-intensive systems, providing excellent performance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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