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SW2N65K-VB TO252 Product details
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Product Introduction
**SW2N65K-VB** is a **single N-channel** MOSFET in **TO252** package. It has a drain-source voltage (V_DS) of up to **650V** and a gate-source voltage (V_GS) of **30V**, suitable for applications requiring higher voltage control. The threshold voltage (V_th) of this MOSFET is **3.5V**, and it has an on-resistance (R_DS(ON)) of **2300mΩ** when the gate voltage is **10V**. This device is suitable for withstanding a maximum leakage current (I_D) of **2A**, and uses **SJ_Multi-EPI** technology, with excellent switching performance and low loss characteristics.
**SW2N65K-VB** is a **single N-channel** MOSFET in **TO252** package. It has a drain-source voltage (V_DS) of up to **650V** and a gate-source voltage (V_GS) of **30V**, suitable for applications requiring higher voltage control. The threshold voltage (V_th) of this MOSFET is **3.5V**, and it has an on-resistance (R_DS(ON)) of **2300mΩ** when the gate voltage is **10V**. This device is suitable for withstanding a maximum leakage current (I_D) of **2A**, and uses **SJ_Multi-EPI** technology, with excellent switching performance and low loss characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------|------------------|------------------------------------|
| **Package type** | TO252 | Medium power package, suitable for surface mount applications. |
| **Configuration** | Single-N-Channel | Single N-channel configuration for efficient current control. |
| **Drain-Source Voltage (V_DS)** | 650V | Suitable for high voltage applications. |
| **Gate-Source Voltage (V_GS)** | ±30V | Maximum gate-source voltage to ensure higher control accuracy. |
| **Threshold Voltage (V_th)** | 3.5V | Gate control voltage starting point, suitable for low voltage drive systems. |
| **On-resistance (R_DS(ON))** | 2300mΩ@V_GS=10V | Low on-resistance provides lower power consumption at 10V gate drive voltage. |
| **Drainage current (I_D)** | 2A | Maximum drain current is 2A, suitable for low power applications. |
| **Technology** | SJ_Multi-EPI | Multi-junction epoxy semiconductor technology ensures efficient switching and low loss characteristics. |
| **Parameter** | **Value** | **Description** |
|------------------|------------------|------------------------------------|
| **Package type** | TO252 | Medium power package, suitable for surface mount applications. |
| **Configuration** | Single-N-Channel | Single N-channel configuration for efficient current control. |
| **Drain-Source Voltage (V_DS)** | 650V | Suitable for high voltage applications. |
| **Gate-Source Voltage (V_GS)** | ±30V | Maximum gate-source voltage to ensure higher control accuracy. |
| **Threshold Voltage (V_th)** | 3.5V | Gate control voltage starting point, suitable for low voltage drive systems. |
| **On-resistance (R_DS(ON))** | 2300mΩ@V_GS=10V | Low on-resistance provides lower power consumption at 10V gate drive voltage. |
| **Drainage current (I_D)** | 2A | Maximum drain current is 2A, suitable for low power applications. |
| **Technology** | SJ_Multi-EPI | Multi-junction epoxy semiconductor technology ensures efficient switching and low loss characteristics. |
Domain and module applications：
Application fields and module examples
1. **Power management system**
- **Power converter**: SW2N65K-VB has a high drain-source voltage and low on-resistance, which is suitable for use in power converters such as AC-DC converters and DC-DC converters, providing efficient power conversion and stable power output.
- **Battery charger**: In battery charging applications, this MOSFET can provide efficient switching control, reduce energy loss, and extend battery life.
2. **Electric vehicle (EV) applications**
- **Drive system**: The high voltage tolerance and excellent conduction characteristics of SW2N65K-VB make it an ideal choice for electric vehicle electric drive systems, especially in the energy conversion of high-voltage battery packs, which can effectively improve the efficiency of the overall system.
- **Charging pile**: This MOSFET is also suitable for power control modules in electric vehicle charging piles, providing reliable voltage conversion and power management.
3. **Solar Inverter**
- **Inverter Circuit**: In solar inverters, SW2N65K-VB can efficiently convert direct current (DC) to alternating current (AC), improve inverter efficiency, and reduce system losses. It is one of the core components in high-power solar power generation systems.
4. **Industrial Control System**
- **Motor Control**: This MOSFET is suitable for various industrial motor drive systems and can improve the efficiency and stability of the motor by accurately controlling the motor current. Especially in applications that require higher voltage control, the 650V drain-source voltage of SW2N65K-VB provides more design flexibility.
5. **Consumer Electronic Devices**
- **Battery Management System**: For portable devices, especially battery-powered consumer electronics, SW2N65K-VB provides a low-power, high-efficiency solution suitable for battery management circuits to ensure long-term operation and stable power supply of the equipment.
SW2N65K-VB has a wide range of application potentials and is suitable for high-efficiency power systems, industrial automation, green energy and other fields, especially in high-voltage and high-efficiency situations.
1. **Power management system**
- **Power converter**: SW2N65K-VB has a high drain-source voltage and low on-resistance, which is suitable for use in power converters such as AC-DC converters and DC-DC converters, providing efficient power conversion and stable power output.
- **Battery charger**: In battery charging applications, this MOSFET can provide efficient switching control, reduce energy loss, and extend battery life.
2. **Electric vehicle (EV) applications**
- **Drive system**: The high voltage tolerance and excellent conduction characteristics of SW2N65K-VB make it an ideal choice for electric vehicle electric drive systems, especially in the energy conversion of high-voltage battery packs, which can effectively improve the efficiency of the overall system.
- **Charging pile**: This MOSFET is also suitable for power control modules in electric vehicle charging piles, providing reliable voltage conversion and power management.
3. **Solar Inverter**
- **Inverter Circuit**: In solar inverters, SW2N65K-VB can efficiently convert direct current (DC) to alternating current (AC), improve inverter efficiency, and reduce system losses. It is one of the core components in high-power solar power generation systems.
4. **Industrial Control System**
- **Motor Control**: This MOSFET is suitable for various industrial motor drive systems and can improve the efficiency and stability of the motor by accurately controlling the motor current. Especially in applications that require higher voltage control, the 650V drain-source voltage of SW2N65K-VB provides more design flexibility.
5. **Consumer Electronic Devices**
- **Battery Management System**: For portable devices, especially battery-powered consumer electronics, SW2N65K-VB provides a low-power, high-efficiency solution suitable for battery management circuits to ensure long-term operation and stable power supply of the equipment.
SW2N65K-VB has a wide range of application potentials and is suitable for high-efficiency power systems, industrial automation, green energy and other fields, especially in high-voltage and high-efficiency situations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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