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SW2N65K-VB TO251 Product details
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**SW2N65K-VB MOSFET Product Introduction**
**SW2N65K-VB** is a high-performance N-channel MOSFET in a **TO251** package, designed for power management applications that require high voltage and high efficiency. Its **VDS (drain-source voltage)** is a maximum of **650V**, suitable for medium and high voltage switching circuits, and **RDS(ON)** is **2300mΩ** at **VGS=10V**, ensuring low on-resistance and high energy efficiency. This MOSFET uses **SJ_Multi-EPI** technology, which has better thermal performance, lower conduction losses and better switching characteristics. Its **Vth (threshold voltage)** is **3.5V**, which is compatible with a variety of logic level drive circuits and is suitable for high voltage applications requiring medium current.
**SW2N65K-VB** is a high-performance N-channel MOSFET in a **TO251** package, designed for power management applications that require high voltage and high efficiency. Its **VDS (drain-source voltage)** is a maximum of **650V**, suitable for medium and high voltage switching circuits, and **RDS(ON)** is **2300mΩ** at **VGS=10V**, ensuring low on-resistance and high energy efficiency. This MOSFET uses **SJ_Multi-EPI** technology, which has better thermal performance, lower conduction losses and better switching characteristics. Its **Vth (threshold voltage)** is **3.5V**, which is compatible with a variety of logic level drive circuits and is suitable for high voltage applications requiring medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**Detailed Parameter Description**
- **Package**: TO251
The TO251 package provides a compact and efficient solution for space-constrained power management applications.
- **Configuration**: Single N-channel
The single N-channel configuration makes this MOSFET suitable for typical switching applications, where N-channel transistors are preferred due to their excellent performance characteristics.
- **VDS (Drain-Source Voltage)**: 650V
The high voltage rating of 650V makes this MOSFET useful in high voltage circuits such as AC-DC conversion, power inverters, and industrial motor control systems.
- **VGS (Gate-Source Voltage)**: ±30V
The wide gate-source voltage range makes this MOSFET compatible with standard logic level signals, providing flexible control.
- **Vth (Threshold Voltage)**: 3.5V
The threshold voltage of 3.5V ensures that this MOSFET can switch efficiently when sufficient gate-source voltage is applied.
- **RDS(ON) (On-Resistance)**: 2300mΩ @ VGS=10V
The on-resistance of 2300mΩ at **VGS=10V** is suitable for low to medium current applications with high energy efficiency and low heat generation.
- **ID (Maximum Continuous Drain Current)**: 2A
The current rating of 2A is suitable for applications that require low to medium current handling while the MOSFET maintains good thermal stability during operation.
- **Technology**: SJ_Multi-EPI
The **SJ_Multi-EPI** (Super Junction Multi-Epi) technology provides lower conduction losses, faster switching speeds and better thermal performance, making this MOSFET an excellent choice for high-performance applications.
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- **Package**: TO251
The TO251 package provides a compact and efficient solution for space-constrained power management applications.
- **Configuration**: Single N-channel
The single N-channel configuration makes this MOSFET suitable for typical switching applications, where N-channel transistors are preferred due to their excellent performance characteristics.
- **VDS (Drain-Source Voltage)**: 650V
The high voltage rating of 650V makes this MOSFET useful in high voltage circuits such as AC-DC conversion, power inverters, and industrial motor control systems.
- **VGS (Gate-Source Voltage)**: ±30V
The wide gate-source voltage range makes this MOSFET compatible with standard logic level signals, providing flexible control.
- **Vth (Threshold Voltage)**: 3.5V
The threshold voltage of 3.5V ensures that this MOSFET can switch efficiently when sufficient gate-source voltage is applied.
- **RDS(ON) (On-Resistance)**: 2300mΩ @ VGS=10V
The on-resistance of 2300mΩ at **VGS=10V** is suitable for low to medium current applications with high energy efficiency and low heat generation.
- **ID (Maximum Continuous Drain Current)**: 2A
The current rating of 2A is suitable for applications that require low to medium current handling while the MOSFET maintains good thermal stability during operation.
- **Technology**: SJ_Multi-EPI
The **SJ_Multi-EPI** (Super Junction Multi-Epi) technology provides lower conduction losses, faster switching speeds and better thermal performance, making this MOSFET an excellent choice for high-performance applications.
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Domain and module applications：
**Application fields and module examples**
1. **Power supply (AC-DC converter)**
**SW2N65K-VB** MOSFET is suitable for **power supply**, such as AC-DC converter. In these applications, the 650V VDS rating and low on-resistance enable it to efficiently handle high voltage input and convert it to a stable DC output. It can be used as the main switch in the power conversion circuit to provide efficient voltage conversion.
2. **Motor control system**
In **motor control applications**, such as industrial automation and home appliances, **SW2N65K-VB** can be used as a high-efficiency switch in **DC-DC converter** or **inverter circuit**. Its 2A current rating and 650V high voltage withstand capability make it ideal for driving motors.
3. **Inverter systems**
In **solar inverters**, **uninterruptible power supplies (UPS)**, and **air conditioning (HVAC)** systems, the SW2N65K-VB MOSFET provides the necessary voltage tolerance and efficient switching capabilities. Its high voltage tolerance (650V) and low gate charge make it suitable for inverter power stages that need to manage high voltage DC inputs.
4. **Communication power equipment**
In **communication** systems, power efficiency is critical. The SW2N65K-VB can be used in **DC-DC power converters**, such as base stations, power amplifiers, and other power modules. Its low RDS(ON) characteristics ensure that less energy is lost as heat, helping to maintain high efficiency in power equipment.
5. **Automotive power modules**
For **automotive applications**, such as **EV charging stations**, **power converters** or **battery management systems (BMS)**, the SW2N65K-VB MOSFET can be used in **DC-DC converters** to step up or down the voltage to suit the vehicle system requirements, providing efficient power conversion and stable operating performance.
6. **LED drivers and lighting systems**
In **LED drivers** and **lighting circuits**, the SW2N65K-VB MOSFET can be used as a switch in a constant current circuit, providing efficient switching operation. Its high voltage rating makes it ideal for driving high-power LED arrays, which are widely used in industrial lighting or automotive lighting.
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This MOSFET is suitable for a variety of power management and control applications, especially those that require medium current, high voltage tolerance and energy efficiency.
1. **Power supply (AC-DC converter)**
**SW2N65K-VB** MOSFET is suitable for **power supply**, such as AC-DC converter. In these applications, the 650V VDS rating and low on-resistance enable it to efficiently handle high voltage input and convert it to a stable DC output. It can be used as the main switch in the power conversion circuit to provide efficient voltage conversion.
2. **Motor control system**
In **motor control applications**, such as industrial automation and home appliances, **SW2N65K-VB** can be used as a high-efficiency switch in **DC-DC converter** or **inverter circuit**. Its 2A current rating and 650V high voltage withstand capability make it ideal for driving motors.
3. **Inverter systems**
In **solar inverters**, **uninterruptible power supplies (UPS)**, and **air conditioning (HVAC)** systems, the SW2N65K-VB MOSFET provides the necessary voltage tolerance and efficient switching capabilities. Its high voltage tolerance (650V) and low gate charge make it suitable for inverter power stages that need to manage high voltage DC inputs.
4. **Communication power equipment**
In **communication** systems, power efficiency is critical. The SW2N65K-VB can be used in **DC-DC power converters**, such as base stations, power amplifiers, and other power modules. Its low RDS(ON) characteristics ensure that less energy is lost as heat, helping to maintain high efficiency in power equipment.
5. **Automotive power modules**
For **automotive applications**, such as **EV charging stations**, **power converters** or **battery management systems (BMS)**, the SW2N65K-VB MOSFET can be used in **DC-DC converters** to step up or down the voltage to suit the vehicle system requirements, providing efficient power conversion and stable operating performance.
6. **LED drivers and lighting systems**
In **LED drivers** and **lighting circuits**, the SW2N65K-VB MOSFET can be used as a switch in a constant current circuit, providing efficient switching operation. Its high voltage rating makes it ideal for driving high-power LED arrays, which are widely used in industrial lighting or automotive lighting.
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This MOSFET is suitable for a variety of power management and control applications, especially those that require medium current, high voltage tolerance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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