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SW2N65DB-VB Product details
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SW2N65DB-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO220F. The design goal of this MOSFET is to provide high voltage (650V) and stable working performance, suitable for application scenarios requiring high voltage resistance, low power consumption and high efficiency. The technology of SW2N65DB-VB adopts a planar structure, which helps to optimize its switching performance and reduce conduction losses, and has a wide range of application prospects.
**Main features:**
- High voltage resistance: 650V, suitable for high voltage systems.
- Low on-resistance: 1700mΩ@VGS=10V, ensuring low power consumption operation at high loads.
- Low gate-source voltage (Vth=3.5V), providing high switching speed and higher efficiency.
- Maximum leakage current: 2A, suitable for small and medium power drive circuits.
- Package type: TO220F, suitable for applications with high heat dissipation requirements.
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**SW2N65DB-VB MOSFET
SW2N65DB-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) packaged in TO220F. The design goal of this MOSFET is to provide high voltage (650V) and stable working performance, suitable for application scenarios requiring high voltage resistance, low power consumption and high efficiency. The technology of SW2N65DB-VB adopts a planar structure, which helps to optimize its switching performance and reduce conduction losses, and has a wide range of application prospects.
**Main features:**
- High voltage resistance: 650V, suitable for high voltage systems.
- Low on-resistance: 1700mΩ@VGS=10V, ensuring low power consumption operation at high loads.
- Low gate-source voltage (Vth=3.5V), providing high switching speed and higher efficiency.
- Maximum leakage current: 2A, suitable for small and medium power drive circuits.
- Package type: TO220F, suitable for applications with high heat dissipation requirements.
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**SW2N65DB-VB MOSFET
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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| Parameters| Description|
|-----------------|------------------------------------------|
| **Model** | SW2N65DB-VB |
| **Package Type** | TO220F |
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage** | 650V |
| **Gate-Source Voltage** | ±30V |
| **Threshold Voltage（Vth）** | 3.5V |
| **On-Resistance（RDS(ON)）** | 1700mΩ@VGS=10V |
| **Maximum Drain Current（ID）** | 2A |
| **Technology** | Plannar |
| **Operating Temperature Range** | -55°C to +150°C |
| **Maximum Power Dissipation** | 80W (depending on the application current and heat dissipation) |
**Application features:**
- **Low conduction loss**: The low on-resistance of this MOSFET enables it to maintain low heat loss during high current transmission, thereby improving the overall system efficiency.
- **Wide voltage operating range**: The 650V withstand voltage makes this MOSFET suitable for high-voltage switching power supplies and motor drive systems.
- **High reliability**: Suitable for working in high temperature and harsh environments, providing high reliability and durability.
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**SW2N65DB-VB MOSFET
| Parameters| Description|
|-----------------|------------------------------------------|
| **Model** | SW2N65DB-VB |
| **Package Type** | TO220F |
| **Configuration** | Single-N-Channel |
| **Maximum Drain-Source Voltage** | 650V |
| **Gate-Source Voltage** | ±30V |
| **Threshold Voltage（Vth）** | 3.5V |
| **On-Resistance（RDS(ON)）** | 1700mΩ@VGS=10V |
| **Maximum Drain Current（ID）** | 2A |
| **Technology** | Plannar |
| **Operating Temperature Range** | -55°C to +150°C |
| **Maximum Power Dissipation** | 80W (depending on the application current and heat dissipation) |
**Application features:**
- **Low conduction loss**: The low on-resistance of this MOSFET enables it to maintain low heat loss during high current transmission, thereby improving the overall system efficiency.
- **Wide voltage operating range**: The 650V withstand voltage makes this MOSFET suitable for high-voltage switching power supplies and motor drive systems.
- **High reliability**: Suitable for working in high temperature and harsh environments, providing high reliability and durability.
---
**SW2N65DB-VB MOSFET
Domain and module applications：
**
1. **Switching Power Supply (SMPS)**
The high withstand voltage and low on-resistance characteristics of SW2N65DB-VB make it very suitable for switching power supply (SMPS). In high-voltage, high-efficiency power conversion, this MOSFET can effectively reduce conduction loss and improve the overall power conversion efficiency, especially in DC-DC converters and AC-DC adapters.
2. **Motor Drive System**
In the motor drive system, SW2N65DB-VB can provide stable current control and is suitable for the switching control of small and medium power motors. For example, the power switch module in the DC motor drive and stepper motor drive system can use its high withstand voltage and high power tolerance to improve the drive efficiency and system stability.
3. **Power Tools and Home Appliances**
This MOSFET is also widely used in power management systems for power tools, air conditioners, refrigerators and other home appliances. It can effectively reduce energy loss, improve energy efficiency and provide high reliability under high-frequency switching operation to meet long-term operation requirements.
4. **Automotive Electronic Systems**
SW2N65DB-VB is also suitable for high-voltage switch applications in automotive electronic systems, such as battery management systems (BMS) and power inverters for electric vehicles (EVs). Its high withstand voltage, low on-resistance and high temperature resistance ensure long-term stable operation in automotive electrical systems.
5. **Solar Inverter**
Due to its high withstand voltage characteristics, SW2N65DB-VB is very suitable for use in solar inverters. Solar inverters are used to convert direct current from solar panels into alternating current. MOSFET, as a switching element, needs to withstand high voltage and current during high-frequency switching. SW2N65DB-VB can effectively provide stable conversion efficiency and reduce energy loss.
In short, SW2N65DB-VB MOSFET occupies an important position in modern power management systems with its excellent voltage tolerance, low on-resistance and wide application fields. It is suitable for multiple scenarios requiring high voltage, high current and high efficiency.
1. **Switching Power Supply (SMPS)**
The high withstand voltage and low on-resistance characteristics of SW2N65DB-VB make it very suitable for switching power supply (SMPS). In high-voltage, high-efficiency power conversion, this MOSFET can effectively reduce conduction loss and improve the overall power conversion efficiency, especially in DC-DC converters and AC-DC adapters.
2. **Motor Drive System**
In the motor drive system, SW2N65DB-VB can provide stable current control and is suitable for the switching control of small and medium power motors. For example, the power switch module in the DC motor drive and stepper motor drive system can use its high withstand voltage and high power tolerance to improve the drive efficiency and system stability.
3. **Power Tools and Home Appliances**
This MOSFET is also widely used in power management systems for power tools, air conditioners, refrigerators and other home appliances. It can effectively reduce energy loss, improve energy efficiency and provide high reliability under high-frequency switching operation to meet long-term operation requirements.
4. **Automotive Electronic Systems**
SW2N65DB-VB is also suitable for high-voltage switch applications in automotive electronic systems, such as battery management systems (BMS) and power inverters for electric vehicles (EVs). Its high withstand voltage, low on-resistance and high temperature resistance ensure long-term stable operation in automotive electrical systems.
5. **Solar Inverter**
Due to its high withstand voltage characteristics, SW2N65DB-VB is very suitable for use in solar inverters. Solar inverters are used to convert direct current from solar panels into alternating current. MOSFET, as a switching element, needs to withstand high voltage and current during high-frequency switching. SW2N65DB-VB can effectively provide stable conversion efficiency and reduce energy loss.
In short, SW2N65DB-VB MOSFET occupies an important position in modern power management systems with its excellent voltage tolerance, low on-resistance and wide application fields. It is suitable for multiple scenarios requiring high voltage, high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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