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SW22N65D-VB Product details
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**
SW22N65D-VB is a high-performance, low on-resistance N-channel MOSFET in TO247 package, designed for high-voltage, high-current power conversion and power management applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, it can withstand a drain current (ID) of up to 20A, and has a low on-resistance (RDS(ON)) of 160mΩ@VGS=10V, ensuring excellent power efficiency in high-efficiency power conversion applications.
SW22N65D-VB uses SJ_Multi-EPI technology, which can significantly reduce on-resistance, optimize switching performance, improve efficiency, and has high thermal stability. It is widely used in power management, inverters, electric vehicle battery management, industrial power supplies and high-efficiency power conversion systems, which can greatly reduce power loss, reduce equipment temperature rise, and improve the reliability and performance of the overall system.
**Two,
SW22N65D-VB is a high-performance, low on-resistance N-channel MOSFET in TO247 package, designed for high-voltage, high-current power conversion and power management applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, it can withstand a drain current (ID) of up to 20A, and has a low on-resistance (RDS(ON)) of 160mΩ@VGS=10V, ensuring excellent power efficiency in high-efficiency power conversion applications.
SW22N65D-VB uses SJ_Multi-EPI technology, which can significantly reduce on-resistance, optimize switching performance, improve efficiency, and has high thermal stability. It is widely used in power management, inverters, electric vehicle battery management, industrial power supplies and high-efficiency power conversion systems, which can greatly reduce power loss, reduce equipment temperature rise, and improve the reliability and performance of the overall system.
**Two,
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
**
- **Model**: SW22N65D-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 20A
- **Maximum Power Loss**: Significant power loss reduction due to low on-resistance
- **Technology Type**: SJ_Multi-EPI Technology
- **Operating Temperature Range**: -55°C to +150°C (Typical)
- **Switching Speed**: Optimized switching characteristics for high-frequency applications
- **Current carrying capacity**: Able to withstand 20A drain current, suitable for high load applications
**Three,
- **Model**: SW22N65D-VB
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 20A
- **Maximum Power Loss**: Significant power loss reduction due to low on-resistance
- **Technology Type**: SJ_Multi-EPI Technology
- **Operating Temperature Range**: -55°C to +150°C (Typical)
- **Switching Speed**: Optimized switching characteristics for high-frequency applications
- **Current carrying capacity**: Able to withstand 20A drain current, suitable for high load applications
**Three,
Domain and module applications：
Examples:
1. **High-efficiency power conversion and DC-DC converters**:
SW22N65D-VB is widely used in power converters (such as DC-DC converters, power regulators, etc.). Its low on-resistance (RDS(ON)) can effectively reduce power loss and improve conversion efficiency in high-current power systems. For industrial equipment, consumer electronics, computer power supplies and other fields, this MOSFET can reduce heat generation and extend the service life of the system while providing stable voltage and efficient conversion.
2. **Electric vehicle battery management system (BMS)**:
In the battery management system (BMS) of electric vehicles, SW22N65D-VB can be used as an efficient power switch for battery charge and discharge management. Its high current carrying capacity and low on-resistance make it an ideal choice for battery management and charge/discharge control circuits. This MOSFET can optimize current flow, ensure battery charging efficiency, and reduce system heat, improving the overall efficiency and safety of electric vehicle power systems.
3. **Industrial Power and Power Conversion**:
In industrial applications, SW22N65D-VB is often used in variable frequency drives (VFD), uninterruptible power supplies (UPS), and power factor correction (PFC) circuits. Its low RDS(ON) characteristics can effectively reduce losses in power conversion and provide more efficient power management. This MOSFET has high voltage and current carrying capacity in power systems, can support high power and high current working environments, and is widely used in industrial automation equipment, power supply systems, and energy management equipment.
4. **Inverter and Solar System**:
SW22N65D-VB also has important applications in inverters and solar power systems, especially for inverter circuits in photovoltaic power generation systems, which can improve photovoltaic power conversion efficiency. The low on-resistance of MOSFET ensures higher energy conversion efficiency and reduces heat loss, making it very suitable for use in efficient solar power generation and other renewable energy management systems.
5. **High-frequency switching power supply**:
SW22N65D-VB is suitable for high-frequency switching power supplies, especially in power conversion applications that require fast switching and high efficiency. Its optimized switching performance and low on-resistance enable it to work stably at high frequencies and reduce switching losses. It is suitable for modules such as LED drivers, power regulators, and battery chargers.
**Summary**
SW22N65D-VB is a high-efficiency, low on-resistance N-channel MOSFET in TO247 package with a drain-source voltage of 650V and a drain current carrying capacity of 20A. It is suitable for various high-voltage and high-current power conversion applications. It adopts SJ_Multi-EPI technology, has excellent switching performance and low conduction loss, and is widely used in power management, industrial power conversion, battery management systems, inverters, solar energy systems and other fields. This MOSFET can significantly improve system efficiency and reduce power loss, and is suitable for modern high-efficiency power conversion and intelligent energy management applications.
1. **High-efficiency power conversion and DC-DC converters**:
SW22N65D-VB is widely used in power converters (such as DC-DC converters, power regulators, etc.). Its low on-resistance (RDS(ON)) can effectively reduce power loss and improve conversion efficiency in high-current power systems. For industrial equipment, consumer electronics, computer power supplies and other fields, this MOSFET can reduce heat generation and extend the service life of the system while providing stable voltage and efficient conversion.
2. **Electric vehicle battery management system (BMS)**:
In the battery management system (BMS) of electric vehicles, SW22N65D-VB can be used as an efficient power switch for battery charge and discharge management. Its high current carrying capacity and low on-resistance make it an ideal choice for battery management and charge/discharge control circuits. This MOSFET can optimize current flow, ensure battery charging efficiency, and reduce system heat, improving the overall efficiency and safety of electric vehicle power systems.
3. **Industrial Power and Power Conversion**:
In industrial applications, SW22N65D-VB is often used in variable frequency drives (VFD), uninterruptible power supplies (UPS), and power factor correction (PFC) circuits. Its low RDS(ON) characteristics can effectively reduce losses in power conversion and provide more efficient power management. This MOSFET has high voltage and current carrying capacity in power systems, can support high power and high current working environments, and is widely used in industrial automation equipment, power supply systems, and energy management equipment.
4. **Inverter and Solar System**:
SW22N65D-VB also has important applications in inverters and solar power systems, especially for inverter circuits in photovoltaic power generation systems, which can improve photovoltaic power conversion efficiency. The low on-resistance of MOSFET ensures higher energy conversion efficiency and reduces heat loss, making it very suitable for use in efficient solar power generation and other renewable energy management systems.
5. **High-frequency switching power supply**:
SW22N65D-VB is suitable for high-frequency switching power supplies, especially in power conversion applications that require fast switching and high efficiency. Its optimized switching performance and low on-resistance enable it to work stably at high frequencies and reduce switching losses. It is suitable for modules such as LED drivers, power regulators, and battery chargers.
**Summary**
SW22N65D-VB is a high-efficiency, low on-resistance N-channel MOSFET in TO247 package with a drain-source voltage of 650V and a drain current carrying capacity of 20A. It is suitable for various high-voltage and high-current power conversion applications. It adopts SJ_Multi-EPI technology, has excellent switching performance and low conduction loss, and is widely used in power management, industrial power conversion, battery management systems, inverters, solar energy systems and other fields. This MOSFET can significantly improve system efficiency and reduce power loss, and is suitable for modern high-efficiency power conversion and intelligent energy management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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