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SW20N50D-VB TO220F Product details
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1. Product Introduction
**SW20N50D-VB** is a **unipolar N-channel MOSFET** in **TO220F package**, designed for high voltage power switching applications. It has a **500V** drain-source voltage (V_DS), suitable for use in high voltage power systems. This MOSFET has a low on-resistance (**R_DS(ON) = 140mΩ @ V_GS = 10V**) and can withstand high current (**I_D = 20A**), which is very suitable for high power and high efficiency power management, switching power supplies and motor drive applications. This product is based on **SJ_Multi-EPI technology**, ensuring lower switching losses and higher efficiency in high frequency switching environments.
**SW20N50D-VB** is a **unipolar N-channel MOSFET** in **TO220F package**, designed for high voltage power switching applications. It has a **500V** drain-source voltage (V_DS), suitable for use in high voltage power systems. This MOSFET has a low on-resistance (**R_DS(ON) = 140mΩ @ V_GS = 10V**) and can withstand high current (**I_D = 20A**), which is very suitable for high power and high efficiency power management, switching power supplies and motor drive applications. This product is based on **SJ_Multi-EPI technology**, ensuring lower switching losses and higher efficiency in high frequency switching environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 20A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 500V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Throughput voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- **140mΩ @ V_GS = 10V**
- **Maximum drain-source current (I_D)**: 20A
- **Maximum power loss (P_D)**: Depends on the working environment and heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI technology
- **Input capacitance (C_GS)**: Approx. 1500pF @ V_DS = 100V
- **Drain-source capacitance (C_DS)**: about 250pF @ V_DS = 100V
- **Switching time**:
- Rise time (t_r): about 30ns
- Fall time (t_f): about 25ns
- **Body diode reverse recovery time**: about 80ns
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 500V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Throughput voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- **140mΩ @ V_GS = 10V**
- **Maximum drain-source current (I_D)**: 20A
- **Maximum power loss (P_D)**: Depends on the working environment and heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI technology
- **Input capacitance (C_GS)**: Approx. 1500pF @ V_DS = 100V
- **Drain-source capacitance (C_DS)**: about 250pF @ V_DS = 100V
- **Switching time**:
- Rise time (t_r): about 30ns
- Fall time (t_f): about 25ns
- **Body diode reverse recovery time**: about 80ns
Domain and module applications：
3. Application fields and module examples
**SW20N50D-VB**'s high voltage carrying capacity and excellent conduction performance make it widely used in many fields, especially in power management and power switching systems that require large currents and high voltages. The following are some typical application fields and modules:
# 1. **Switching Power Supply (SMPS)**
- **SW20N50D-VB** can be used in various types of **Switching Power Supply** (SMPS), including **DC-DC converters** and **AC-DC power modules**. Its **500V** drain-source voltage makes it very suitable for high-voltage power conversion applications, especially in **Power Factor Correction** (PFC) circuits and **High-efficiency DC-DC conversion**, which can provide high power density while reducing switching losses and improving efficiency.
# 6. **Power Transmission and Protection**
- This MOSFET can also be used in **power transmission systems** as a current and voltage switching element to provide protection functions in power systems. It can prevent overcurrent and overvoltage in the circuit and protect the equipment from power shock. It is commonly found in **power transmission grid** and **backup power supply system**.
# 7. **Industrial automation equipment**
- In **industrial automation equipment**, especially those that require high-power switch control, **SW20N50D-VB** can be used to drive high-power loads and control current paths. It is particularly suitable for **electric welding machines, robot systems and electric lifting platforms**, and can stably control the switching process of large currents.
Summary
**SW20N50D-VB** is an **N-channel MOSFET** with **500V** drain-source voltage and **20A** maximum current capability. It has low on-resistance (**R_DS(ON) = 140mΩ**) and excellent switching performance, and is particularly suitable for high-voltage power management and power conversion systems. It is widely used in multiple fields such as switching power supplies, DC-DC converters, motor drives, battery management, solar power systems, power electronic equipment and industrial automation, and can provide reliable switching solutions for power conversion and control systems with high efficiency and high reliability requirements.
**SW20N50D-VB**'s high voltage carrying capacity and excellent conduction performance make it widely used in many fields, especially in power management and power switching systems that require large currents and high voltages. The following are some typical application fields and modules:
# 1. **Switching Power Supply (SMPS)**
- **SW20N50D-VB** can be used in various types of **Switching Power Supply** (SMPS), including **DC-DC converters** and **AC-DC power modules**. Its **500V** drain-source voltage makes it very suitable for high-voltage power conversion applications, especially in **Power Factor Correction** (PFC) circuits and **High-efficiency DC-DC conversion**, which can provide high power density while reducing switching losses and improving efficiency.
# 6. **Power Transmission and Protection**
- This MOSFET can also be used in **power transmission systems** as a current and voltage switching element to provide protection functions in power systems. It can prevent overcurrent and overvoltage in the circuit and protect the equipment from power shock. It is commonly found in **power transmission grid** and **backup power supply system**.
# 7. **Industrial automation equipment**
- In **industrial automation equipment**, especially those that require high-power switch control, **SW20N50D-VB** can be used to drive high-power loads and control current paths. It is particularly suitable for **electric welding machines, robot systems and electric lifting platforms**, and can stably control the switching process of large currents.
Summary
**SW20N50D-VB** is an **N-channel MOSFET** with **500V** drain-source voltage and **20A** maximum current capability. It has low on-resistance (**R_DS(ON) = 140mΩ**) and excellent switching performance, and is particularly suitable for high-voltage power management and power conversion systems. It is widely used in multiple fields such as switching power supplies, DC-DC converters, motor drives, battery management, solar power systems, power electronic equipment and industrial automation, and can provide reliable switching solutions for power conversion and control systems with high efficiency and high reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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