SW200R10VT-VB TO251 Product details
Product introduction:
SW200R10VT-VB is a high-performance, high-current carrying capacity single N-channel MOSFET in TO251 package, designed for high-efficiency power management, battery drive and power conversion applications. Its maximum drain-source voltage (VDS) is 100V, the maximum drain current (ID) can reach 50A, and it has an extremely low on-resistance (RDS(ON)) - when VGS=10V, RDS(ON) is only 19mΩ. This makes SW200R10VT-VB perform well in high-efficiency power conversion, industrial power supply, automotive electronics and battery management, and can significantly reduce power loss and improve the overall efficiency of the system.
This MOSFET adopts Trench technology, has good switching characteristics and low conduction loss, and is very suitable for applications requiring high-frequency switching and high-current drive. Its structural design ensures the stability and reliability of MOSFET under high current and high voltage conditions, and is suitable for various power conversion systems, electric vehicle battery management, and industrial equipment and other high-demand applications.
**Two,
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 50A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: SW200R10VT-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **On-Resistance (RDS(ON))**:
- 19mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 50A
- **Technology Type**: Trench Technology
- **Maximum Power Loss**: Significant power loss reduction due to low on-resistance
- **Operating Temperature Range**: -55°C to +150°C (typical)
- **Switching Speed**: Suitable for high-frequency switching applications with excellent switching performance
- **Application areas**: power conversion, power amplification, battery management system, etc.
**Three,
Domain and module applications:
1. Power Conversion and DC-DC Converters:
SW200R10VT-VB is an important application in efficient power management systems, especially in DC-DC converters, power regulator modules and other fields. In these systems, the low on-resistance of this MOSFET can effectively reduce power loss and improve conversion efficiency, thereby extending system life and reducing operating costs. In consumer electronics, chargers, power supplies and other devices, this MOSFET helps to improve power conversion efficiency and reduce heat loss.
2. Battery Management System (BMS):
SW200R10VT-VB is suitable for battery management systems (BMS), especially the battery control part in power tools, electric vehicles and large-scale energy storage systems. During the battery charging and discharging process, the high current carrying capacity and low on-resistance of SW200R10VT-VB help to efficiently control the current flow, while reducing temperature rise and improving system efficiency. For battery management systems, SW200R10VT-VB can optimize the battery charging and discharging process, extend battery life and improve the overall performance of the battery pack.
3. **Electric Vehicles and Battery Drive Systems**:
In electric vehicles (EVs) and other battery drive systems, the SW200R10VT-VB can be applied to modules such as battery management, inverters, drive motor control, and power factor correction (PFC) circuits. As a high-efficiency power switch, it can provide stable current flow in the electric vehicle power system and help achieve higher power conversion efficiency. Its low RDS(ON) ensures stable operation under high loads, reduces energy losses, and improves the overall efficiency of the power system.
4. **Industrial Power Supply and Power Conversion**:
SW200R10VT-VB is also widely used in industrial power supplies, inverters, UPS (uninterruptible power supplies), and power factor correction circuits (PFC). The MOSFET can provide stable power conversion in these applications, while the low on-resistance helps reduce the heat of the equipment and improve work efficiency. Especially in industrial equipment with high power and high current requirements, the SW200R10VT-VB provides excellent performance.
5. **Automotive electronics and efficient power supply**:
This MOSFET can also be widely used in automotive electronic systems, including battery management systems, DC-DC converters, LED drive circuits, etc. Its low power loss characteristics in automotive electrical systems help improve the energy efficiency of the system, reduce heat generation, and support higher operating currents. With the popularity of electric vehicles, SW200R10VT-VB will play an important role in more efficient power and battery systems.
**Summary**
SW200R10VT-VB is a high-performance, low on-resistance N-channel MOSFET in TO251 package, suitable for high-current power conversion, battery management, electric vehicles, and industrial power conversion. Its extremely low RDS(ON) and high current carrying capacity make it excellent in these fields, which can significantly reduce power loss and improve overall efficiency. It is an ideal choice for efficient power management, power conversion, and battery drive systems.
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