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SW1N60DC-VB SOT223 Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
**SW1N60DC-VB** is a single N-channel power MOSFET in a **SOT223** package with a **650V** maximum drain-source voltage (VDS) and **1A** maximum drain current (ID). Its gate-source voltage (VGS) can withstand a maximum of **30V**, and its threshold voltage (Vth) is **3.5V**, which can achieve stable switching performance under low voltage drive. The on-resistance (RDS(ON)) of this MOSFET is **8Ω** at VGS=10V, which is suitable for lower power applications. Using **Plannar technology**, the device has high reliability and good electrical characteristics, and is suitable for some occasions with restrictions on volume and space.
This MOSFET is particularly suitable for applications such as low-power power supplies, signal processing, switching power supplies, and is suitable for power regulation scenarios with small circuits or small loads.
**SW1N60DC-VB** is a single N-channel power MOSFET in a **SOT223** package with a **650V** maximum drain-source voltage (VDS) and **1A** maximum drain current (ID). Its gate-source voltage (VGS) can withstand a maximum of **30V**, and its threshold voltage (Vth) is **3.5V**, which can achieve stable switching performance under low voltage drive. The on-resistance (RDS(ON)) of this MOSFET is **8Ω** at VGS=10V, which is suitable for lower power applications. Using **Plannar technology**, the device has high reliability and good electrical characteristics, and is suitable for some occasions with restrictions on volume and space.
This MOSFET is particularly suitable for applications such as low-power power supplies, signal processing, switching power supplies, and is suitable for power regulation scenarios with small circuits or small loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | 8000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. **Detailed parameter description**
- **Model**: SW1N60DC-VB
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 10000mΩ @ VGS = 4.5V
- 8000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 1A
- **Power consumption**: About 250mW (typical)
- **Input capacitance (Ciss)**: About 70pF
- **Output capacitance (Coss)**: about 35pF
- **Reverse recovery time**: about 20ns
- **Switching time**: rise time is typically 50ns, fall time is 80ns
- **Operating temperature range**: -55°C to +150°C
- **Package size**: SOT223, suitable for space-constrained applications that require high heat dissipation
- **Static safe operating area (SOA)**: provides stable working capabilities under various voltage and current conditions
- **Model**: SW1N60DC-VB
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 10000mΩ @ VGS = 4.5V
- 8000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 1A
- **Power consumption**: About 250mW (typical)
- **Input capacitance (Ciss)**: About 70pF
- **Output capacitance (Coss)**: about 35pF
- **Reverse recovery time**: about 20ns
- **Switching time**: rise time is typically 50ns, fall time is 80ns
- **Operating temperature range**: -55°C to +150°C
- **Package size**: SOT223, suitable for space-constrained applications that require high heat dissipation
- **Static safe operating area (SOA)**: provides stable working capabilities under various voltage and current conditions
Domain and module applications：
3. **Application fields and modules**
1. **Low power switching power supply**
- **SW1N60DC-VB** is suitable for **low power switching power supply** (SMPS), especially those occasions that do not need to handle high current. For example, in **LED driver power supply** or **5V/12V power module**, this MOSFET can be used for power conversion under light load conditions, helping to maintain high conversion efficiency while reducing heat generation.
2. **Small power management system**
- In small power management applications, **SW1N60DC-VB** is used in **battery management system** (BMS) and **low power battery charger**. The low on-resistance and medium current handling capability of MOSFET make it suitable for battery charge and discharge control, especially for devices with current **less than 1A**.
3. **Signal Switch**
- In **signal switch** applications that require high withstand voltage, **SW1N60DC-VB** can be used for **analog signal conditioning** or **audio circuit switching**. Its high voltage withstand capability gives it an advantage in switching control of high voltage signals, especially in **audio amplifiers** or **low-power signal processing circuits**, providing efficient control.
4. **Low-Power Motor Drive**
- This MOSFET is also suitable for **low-power motor drive** systems, such as **stepper motor** or **small DC motor** drives. Due to its small size and moderate current handling capability, this MOSFET can effectively control the start and stop process of small motors, especially for motor drive modules in desktop equipment or home appliances.
5. **Power Factor Correction (PFC)**
- In **Power Factor Correction Circuit** (PFC), **SW1N60DC-VB** can be used to improve the power factor of small power supplies, reduce energy loss, and help the system achieve higher energy utilization. Especially in low-power consumer products, it can effectively improve the efficiency of power conversion.
6. **Overvoltage Protection and Overcurrent Protection**
- **SW1N60DC-VB** is also used in **Overvoltage Protection** and **Overcurrent Protection** circuits, especially in **Battery Powered Systems** or **Small Power Systems**, MOSFET can be used as a switching element to detect and cut off overcurrent or overvoltage conditions to protect other sensitive components in the system.
7. **Switching Regulator**
- **SW1N60DC-VB** is suitable for **Switching Regulator** applications, especially in devices with low-to-medium voltage output requirements. This MOSFET is suitable for providing stable voltage output for mobile devices, LED lighting, low power adapters, etc.
1. **Low power switching power supply**
- **SW1N60DC-VB** is suitable for **low power switching power supply** (SMPS), especially those occasions that do not need to handle high current. For example, in **LED driver power supply** or **5V/12V power module**, this MOSFET can be used for power conversion under light load conditions, helping to maintain high conversion efficiency while reducing heat generation.
2. **Small power management system**
- In small power management applications, **SW1N60DC-VB** is used in **battery management system** (BMS) and **low power battery charger**. The low on-resistance and medium current handling capability of MOSFET make it suitable for battery charge and discharge control, especially for devices with current **less than 1A**.
3. **Signal Switch**
- In **signal switch** applications that require high withstand voltage, **SW1N60DC-VB** can be used for **analog signal conditioning** or **audio circuit switching**. Its high voltage withstand capability gives it an advantage in switching control of high voltage signals, especially in **audio amplifiers** or **low-power signal processing circuits**, providing efficient control.
4. **Low-Power Motor Drive**
- This MOSFET is also suitable for **low-power motor drive** systems, such as **stepper motor** or **small DC motor** drives. Due to its small size and moderate current handling capability, this MOSFET can effectively control the start and stop process of small motors, especially for motor drive modules in desktop equipment or home appliances.
5. **Power Factor Correction (PFC)**
- In **Power Factor Correction Circuit** (PFC), **SW1N60DC-VB** can be used to improve the power factor of small power supplies, reduce energy loss, and help the system achieve higher energy utilization. Especially in low-power consumer products, it can effectively improve the efficiency of power conversion.
6. **Overvoltage Protection and Overcurrent Protection**
- **SW1N60DC-VB** is also used in **Overvoltage Protection** and **Overcurrent Protection** circuits, especially in **Battery Powered Systems** or **Small Power Systems**, MOSFET can be used as a switching element to detect and cut off overcurrent or overvoltage conditions to protect other sensitive components in the system.
7. **Switching Regulator**
- **SW1N60DC-VB** is suitable for **Switching Regulator** applications, especially in devices with low-to-medium voltage output requirements. This MOSFET is suitable for providing stable voltage output for mobile devices, LED lighting, low power adapters, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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