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SW1N60A-VB Product details
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：**
The SW1N60A-VB is a high voltage unipolar N-type MOSFET in a TO92 package designed for low to medium power electronic applications. Its maximum drain-source voltage (VDS) is 600V, suitable for handling higher voltage loads while maintaining low leakage current and good switching characteristics. The maximum drain current of this MOSFET is 1A and it is manufactured using traditional Plannar technology. The threshold voltage (Vth) of the SW1N60A-VB is 2V and the on-resistance (RDS(ON)) is 6667mΩ (@ VGS = 10V), which enables it to exhibit stable operating performance in applications requiring low to medium power.
This MOSFET is very suitable for applications such as power management, low power switching circuits and current limiting, especially in applications requiring higher voltage protection or control, which can effectively improve the reliability and efficiency of the system.
**
The SW1N60A-VB is a high voltage unipolar N-type MOSFET in a TO92 package designed for low to medium power electronic applications. Its maximum drain-source voltage (VDS) is 600V, suitable for handling higher voltage loads while maintaining low leakage current and good switching characteristics. The maximum drain current of this MOSFET is 1A and it is manufactured using traditional Plannar technology. The threshold voltage (Vth) of the SW1N60A-VB is 2V and the on-resistance (RDS(ON)) is 6667mΩ (@ VGS = 10V), which enables it to exhibit stable operating performance in applications requiring low to medium power.
This MOSFET is very suitable for applications such as power management, low power switching circuits and current limiting, especially in applications requiring higher voltage protection or control, which can effectively improve the reliability and efficiency of the system.
**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
：**
- **Package type:** TO92
- **Configuration:** Unipolar N-type
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 2V
- **On-resistance (RDS(ON)):** 6667mΩ @ VGS = 10V
- **Maximum drain current (ID):** 1A
- **Technology type:** Plannar
**
- **Package type:** TO92
- **Configuration:** Unipolar N-type
- **Drain-source voltage (VDS):** 600V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 2V
- **On-resistance (RDS(ON)):** 6667mΩ @ VGS = 10V
- **Maximum drain current (ID):** 1A
- **Technology type:** Plannar
**
Domain and module applications：
：**
1. **High Voltage Power Management System:**
SW1N60A-VB MOSFET can be used for switch control in high voltage power management system. Its 600V drain-source voltage enables it to handle higher voltage power input, while having a lower on-resistance, which can effectively reduce power loss. Therefore, it is suitable for use in uninterruptible power supply (UPS) systems, switching power supplies (SMPS) and high-efficiency power modules, especially under medium power requirements, to provide reliable voltage conversion and power regulation.
2. **Power Converter:**
Due to the high voltage tolerance of SW1N60A-VB, it can be used in medium and low power power converters, such as small inverters, battery chargers and DC power conversion modules. In these applications, the MOSFET can effectively convert voltage and current as a switching device, ensuring the high efficiency and stability of the system during long-term operation.
3. **Low-power switching circuits:**
In some low-power applications, such as home appliances, automotive electronics, etc., SW1N60A-VB can be used as a switching element to control loads or implement current switching operations. Through its lower on-resistance, it can achieve efficient switching control in smaller power circuits.
4. **Current limiting and protection circuits:**
In some high-voltage circuit designs, SW1N60A-VB can be used in current limiting and overload protection circuits. Due to its higher VDS and stable switching characteristics, it can protect the circuit from high current shocks while maintaining the accuracy of current control to prevent circuit overload.
5. **Automotive electronic systems:**
In automotive electronic systems, SW1N60A-VB MOSFET is suitable for modules such as battery management, lighting control, and engine control unit (ECU). Especially in situations where high voltage control and protection are required, this MOSFET can provide stable and efficient power control for automotive electronic equipment.
6. **Relay replacement application:**
SW1N60A-VB can also be used as a replacement component for relays, replacing traditional mechanical relays in low-power switching circuits that require high voltage control. Its high-speed switching and low power loss characteristics make it very suitable for use in modern automation control systems and remote control equipment.
**Summary:**
SW1N60A-VB is a unipolar N-type MOSFET suitable for high-voltage switching applications. It has a drain-source voltage of 600V and low on-resistance, and can provide efficient power management and current control. It has a wide range of applications in power management systems, power converters, current limiting protection, battery management, and automotive electronics. Its reliable performance and stable operating characteristics make it an ideal choice for medium and low power applications.
1. **High Voltage Power Management System:**
SW1N60A-VB MOSFET can be used for switch control in high voltage power management system. Its 600V drain-source voltage enables it to handle higher voltage power input, while having a lower on-resistance, which can effectively reduce power loss. Therefore, it is suitable for use in uninterruptible power supply (UPS) systems, switching power supplies (SMPS) and high-efficiency power modules, especially under medium power requirements, to provide reliable voltage conversion and power regulation.
2. **Power Converter:**
Due to the high voltage tolerance of SW1N60A-VB, it can be used in medium and low power power converters, such as small inverters, battery chargers and DC power conversion modules. In these applications, the MOSFET can effectively convert voltage and current as a switching device, ensuring the high efficiency and stability of the system during long-term operation.
3. **Low-power switching circuits:**
In some low-power applications, such as home appliances, automotive electronics, etc., SW1N60A-VB can be used as a switching element to control loads or implement current switching operations. Through its lower on-resistance, it can achieve efficient switching control in smaller power circuits.
4. **Current limiting and protection circuits:**
In some high-voltage circuit designs, SW1N60A-VB can be used in current limiting and overload protection circuits. Due to its higher VDS and stable switching characteristics, it can protect the circuit from high current shocks while maintaining the accuracy of current control to prevent circuit overload.
5. **Automotive electronic systems:**
In automotive electronic systems, SW1N60A-VB MOSFET is suitable for modules such as battery management, lighting control, and engine control unit (ECU). Especially in situations where high voltage control and protection are required, this MOSFET can provide stable and efficient power control for automotive electronic equipment.
6. **Relay replacement application:**
SW1N60A-VB can also be used as a replacement component for relays, replacing traditional mechanical relays in low-power switching circuits that require high voltage control. Its high-speed switching and low power loss characteristics make it very suitable for use in modern automation control systems and remote control equipment.
**Summary:**
SW1N60A-VB is a unipolar N-type MOSFET suitable for high-voltage switching applications. It has a drain-source voltage of 600V and low on-resistance, and can provide efficient power management and current control. It has a wide range of applications in power management systems, power converters, current limiting protection, battery management, and automotive electronics. Its reliable performance and stable operating characteristics make it an ideal choice for medium and low power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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