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SW1N55D-VB Product details

Product introduction:

1. Product Introduction

**SW1N55D-VB** is a **unipolar N-channel MOSFET** in **TO251 package**, suitable for power switching and power management applications requiring high voltage. The device has a **550V** maximum drain-source voltage (V_DS), suitable for use in high voltage environments, and can provide stable power switching functions in relatively low current applications. Its **on-resistance (R_DS(ON))** is **6500mΩ** (V_GS=10V). Although the on-resistance is relatively high, it can still provide reliable performance in some low current applications. Its **maximum drain current (I_D)** is **1A**, suitable for low-power switching power supplies and control circuits, especially for low-power power conversion and protection circuits. This MOSFET adopts **Plannar technology** to ensure its excellent performance in stability and working reliability, and is widely used in a variety of low-power demand fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 550V 3.5V 1A 6500mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 550V 3.5V 1A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 550V 3.5V 1A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
2. Detailed parameter description

- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 550V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Throughput voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- **6500mΩ @ V_GS = 10V**
- **Maximum drain-source current (I_D)**: 1A
- **Maximum power loss (P_D)**: Depends on the working environment and heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Plannar technology
- **Input capacitance (C_GS)**: Approx. 1000pF @ V_DS = 100V
- **Drain-source capacitance (C_DS)**: about 50pF @ V_DS = 100V
- **Switching time**:
- Rise time (t_r): about 50ns
- Fall time (t_f): about 30ns
- **Body diode reverse recovery time**: about 60ns

Domain and module applications:

3. Application fields and module examples

**SW1N55D-VB** is an N-channel MOSFET suitable for high voltage, which has a wide range of application scenarios. Although its current is small, it still performs well in many low-power and low-current fields. Here are some typical application fields and modules:

#### 1. **Low-power switching power supply**
- **SW1N55D-VB** can be used in **low-power switching power supply** (SMPS), especially for small **DC-DC converter** and **power protection circuit**. It can work stably in an environment with a voltage of up to 550V and is suitable for low-current applications, such as power modules for some small electronic devices and communication equipment.

#### 2. **Battery management system**
- In the **Battery management system** (BMS), **SW1N55D-VB** is suitable for scenarios where switches are required to control battery voltage and current, especially battery charging and discharging protection. It can operate stably when the battery voltage is high and provide current switching function to protect the battery from overvoltage and overcurrent.

#### 3. **Small Power Tools**
- In **Small Power Tools** (such as hand tools, electric screwdrivers, etc.), **SW1N55D-VB** can be used as part of the power management and drive circuit. Because it can withstand higher voltages and provide switching control at low currents, it is very suitable for battery power supplies and motor control modules that drive low-power power tools.

#### 4. **Lighting Control Systems**
- In **LED Lighting Control Systems**, **SW1N55D-VB** can be used for **LED drivers** and **lighting modules**. This MOSFET can act as a current switch in the lighting circuit, especially for low-power lighting applications such as indoor lighting, display lights and emergency lighting, ensuring stable power supply and overcurrent protection.

#### 5. **Home appliances**
- In **home appliances** (such as microwave ovens, washing machines, etc.), **SW1N55D-VB** can be used as part of a **power management module**. It is used to control power input, regulate voltage and current, and plays an important role in the power management of these devices. Its stability and high-voltage carrying capacity make it widely used in different home appliances.

#### 6. **Power regulation and protection circuits**
- In various **power regulation circuits** and **overvoltage protection circuits**, **SW1N55D-VB** can be used as a switch component to protect the system from overvoltage or overcurrent. It is particularly suitable for protection circuits that need to regulate current or voltage, such as overload protection, short-circuit protection and other modules.

### Summary

**SW1N55D-VB** is an **N-channel MOSFET** suitable for low-power switching applications in high-voltage environments, with a **550V** drain-source voltage and a relatively high on-resistance (6500mΩ), and a maximum current of **1A**. It has a wide range of applications in **low-power power management, battery management systems, small power tools, LED drivers, home appliance control, power regulation and protection circuits**. Although the current is relatively small, its reliability and stability make it an ideal choice for a variety of low-power power conversion and protection applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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