中文
English
SW13N70D-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**SW13N70D-VB** is an **N-channel MOSFET** in **TO220F** package, designed for high voltage applications and suitable for medium current loads. Its **maximum drain voltage (V_DS)** is **700V** and maximum drain current (I_D) is **11A**, suitable for applications that require high voltage tolerance and high switching frequency. This MOSFET adopts **SJ_Multi-EPI technology** and has an excellent **on-resistance (R_DS(ON))** of about **450mΩ@V_GS=10V**, which can effectively reduce conduction losses and provide reliable performance in various high voltage applications such as power conversion, inverters, power supplies, etc. The **turn-on voltage (V_th)** of this device is **3.5V**, which is suitable for switching circuits with low voltage gate drive, especially for application scenarios that require high voltage carrying capacity.
**SW13N70D-VB** is an **N-channel MOSFET** in **TO220F** package, designed for high voltage applications and suitable for medium current loads. Its **maximum drain voltage (V_DS)** is **700V** and maximum drain current (I_D) is **11A**, suitable for applications that require high voltage tolerance and high switching frequency. This MOSFET adopts **SJ_Multi-EPI technology** and has an excellent **on-resistance (R_DS(ON))** of about **450mΩ@V_GS=10V**, which can effectively reduce conduction losses and provide reliable performance in various high voltage applications such as power conversion, inverters, power supplies, etc. The **turn-on voltage (V_th)** of this device is **3.5V**, which is suitable for switching circuits with low voltage gate drive, especially for application scenarios that require high voltage carrying capacity.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain voltage (V_DS)**: 700V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Throughput voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- **450mΩ @ V_GS = 10V**
- **Maximum drain current (I_D)**: 11A
- **Maximum power loss (P_d)**: Depends on the working environment and heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI
- **Input capacitance (C_GS)**: Approx. 1300pF @ V_DS = 50V
- **Drain-source capacitance (C_DS)**: Approx. 95pF @ V_DS = 50V
- **Switching time**:
- Rise time (t_r) Approx. 50ns
- Fall time (t_f) Approx. 30ns
- **Maximum body diode reverse recovery time**: 90ns
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain voltage (V_DS)**: 700V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Throughput voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- **450mΩ @ V_GS = 10V**
- **Maximum drain current (I_D)**: 11A
- **Maximum power loss (P_d)**: Depends on the working environment and heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI
- **Input capacitance (C_GS)**: Approx. 1300pF @ V_DS = 50V
- **Drain-source capacitance (C_DS)**: Approx. 95pF @ V_DS = 50V
- **Switching time**:
- Rise time (t_r) Approx. 50ns
- Fall time (t_f) Approx. 30ns
- **Maximum body diode reverse recovery time**: 90ns
Domain and module applications：
Application fields and module examples
**SW13N70D-VB** is a high-voltage, high-performance MOSFET suitable for multiple power electronics fields, especially in applications that require high voltage carrying capacity and high-efficiency conversion. Here are several major application scenarios:
#### 1. **Power conversion system**
- **SW13N70D-VB** is widely used in **switching power supplies (SMPS)**, especially in **high voltage power supplies**, such as **power adapters**, **industrial power modules**, **UPS (uninterruptible power supply)**, etc. Its **700V** maximum withstand voltage capability enables it to efficiently handle high voltage inputs and is suitable for various high-efficiency power systems. The low on-resistance of this MOSFET can help reduce conduction losses and optimize the efficiency of the power system.
#### 2. **Inverter Applications**
- Due to its **700V** drain voltage capability, **SW13N70D-VB** is suitable for **inverters**, such as **solar inverters** and **wind power inverters**, which can efficiently convert direct current (DC) to alternating current (AC). The application of this MOSFET in these inverters can provide efficient power conversion, reduce switching losses, and improve the overall efficiency of the system, especially for medium-power photovoltaic and wind power systems.
#### 3. **Motor Drive and Control**
- In **motor drive** and **control systems**, **SW13N70D-VB** can be used for medium-power **motor drives**, especially for **industrial automation**, **HVAC systems (heating, ventilation and air conditioning)**, **power tools** and **home appliances**. By optimizing the switching characteristics, this MOSFET can effectively control the starting, speed regulation and driving of the motor, improving the overall efficiency of the motor control system.
#### 4. **Battery Management System (BMS)**
- **SW13N70D-VB** is suitable for **Battery Management System (BMS)**, especially in battery packs of **Electric Vehicles (EV)** and **Energy Storage Systems**. This MOSFET can provide efficient power conversion during the charging and discharging process of the battery pack, ensuring the stability and efficiency of the battery management system. The 700V withstand voltage capability makes it suitable for high voltage applications that handle large battery packs.
#### 5. **Power Factor Correction (PFC)**
- This MOSFET can also be used in **Power Factor Correction (PFC) circuits**, especially in **Power Supply Systems**. By improving the power factor of the power supply and reducing harmonic interference, **SW13N70D-VB** helps improve the quality and efficiency of the power supply, and is suitable for PFC applications in **Industrial Power Supplies**, **Home Appliance Power Supplies** and **Power Electronic Systems**.
#### 6. **LED Driver**
- **SW13N70D-VB** can also be widely used in **high-power LED driver**, especially in **commercial lighting** and **architectural lighting**. By providing stable voltage and low-loss current control, it can ensure long life and high efficiency of LED light sources, especially for lighting power supplies that require high voltage carrying capacity.
### Summary
**SW13N70D-VB** is a high-voltage, high-efficiency N-channel MOSFET suitable for applications that require 700V high voltage carrying capacity and high switching frequency. With its **450mΩ** low on-resistance and **11A** high current carrying capacity, this MOSFET can provide high-efficiency and low-loss power conversion in a variety of power electronics applications, especially in **power conversion systems**, **inverters**, **motor drives**, **battery management systems** and **LED driver**.
**SW13N70D-VB** is a high-voltage, high-performance MOSFET suitable for multiple power electronics fields, especially in applications that require high voltage carrying capacity and high-efficiency conversion. Here are several major application scenarios:
#### 1. **Power conversion system**
- **SW13N70D-VB** is widely used in **switching power supplies (SMPS)**, especially in **high voltage power supplies**, such as **power adapters**, **industrial power modules**, **UPS (uninterruptible power supply)**, etc. Its **700V** maximum withstand voltage capability enables it to efficiently handle high voltage inputs and is suitable for various high-efficiency power systems. The low on-resistance of this MOSFET can help reduce conduction losses and optimize the efficiency of the power system.
#### 2. **Inverter Applications**
- Due to its **700V** drain voltage capability, **SW13N70D-VB** is suitable for **inverters**, such as **solar inverters** and **wind power inverters**, which can efficiently convert direct current (DC) to alternating current (AC). The application of this MOSFET in these inverters can provide efficient power conversion, reduce switching losses, and improve the overall efficiency of the system, especially for medium-power photovoltaic and wind power systems.
#### 3. **Motor Drive and Control**
- In **motor drive** and **control systems**, **SW13N70D-VB** can be used for medium-power **motor drives**, especially for **industrial automation**, **HVAC systems (heating, ventilation and air conditioning)**, **power tools** and **home appliances**. By optimizing the switching characteristics, this MOSFET can effectively control the starting, speed regulation and driving of the motor, improving the overall efficiency of the motor control system.
#### 4. **Battery Management System (BMS)**
- **SW13N70D-VB** is suitable for **Battery Management System (BMS)**, especially in battery packs of **Electric Vehicles (EV)** and **Energy Storage Systems**. This MOSFET can provide efficient power conversion during the charging and discharging process of the battery pack, ensuring the stability and efficiency of the battery management system. The 700V withstand voltage capability makes it suitable for high voltage applications that handle large battery packs.
#### 5. **Power Factor Correction (PFC)**
- This MOSFET can also be used in **Power Factor Correction (PFC) circuits**, especially in **Power Supply Systems**. By improving the power factor of the power supply and reducing harmonic interference, **SW13N70D-VB** helps improve the quality and efficiency of the power supply, and is suitable for PFC applications in **Industrial Power Supplies**, **Home Appliance Power Supplies** and **Power Electronic Systems**.
#### 6. **LED Driver**
- **SW13N70D-VB** can also be widely used in **high-power LED driver**, especially in **commercial lighting** and **architectural lighting**. By providing stable voltage and low-loss current control, it can ensure long life and high efficiency of LED light sources, especially for lighting power supplies that require high voltage carrying capacity.
### Summary
**SW13N70D-VB** is a high-voltage, high-efficiency N-channel MOSFET suitable for applications that require 700V high voltage carrying capacity and high switching frequency. With its **450mΩ** low on-resistance and **11A** high current carrying capacity, this MOSFET can provide high-efficiency and low-loss power conversion in a variety of power electronics applications, especially in **power conversion systems**, **inverters**, **motor drives**, **battery management systems** and **LED driver**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
