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SW12N65D-VB TO220F Product details

Product introduction:

1. Product Introduction

**SW12N65D-VB** is an **N-channel MOSFET** in a **TO220F** package, designed for high voltage and medium current applications. The **maximum drain voltage (V_DS)** of this MOSFET is **650V** and the maximum drain current (I_D) is **12A**, which is suitable for switching, regulation and power conversion applications in various power electronic equipment. Using **Plannar technology**, its **on-resistance (R_DS(ON))** is **680mΩ@V_GS=10V**, providing lower conduction losses and excellent performance in medium power and high voltage applications. The **turn-on voltage (V_th)** of this MOSFET is 3.5V, which is suitable for low voltage gate drive applications, especially in scenarios requiring high voltage tolerance and high efficiency conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Throughput voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- **680mΩ @ V_GS = 10V**
- **Maximum drain current (I_D)**: 12A
- **Maximum power loss (P_d)**: Depends on the working environment and heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Plannar
- **Input capacitance (C_GS)**: Approx. 1500pF @ V_DS = 50V
- **Drain-source capacitance (C_DS)**: about 120pF @ V_DS = 50V
- **Switching time**: rise time (t_r) and fall time (t_f) are 70ns and 50ns respectively
- **Maximum body diode reverse recovery time**: 100ns

Domain and module applications:


### 3. Application fields and module examples

**SW12N65D-VB** As a high voltage MOSFET, it is suitable for multiple power electronics fields, especially in environments with medium current and high voltage requirements. Here are several major application scenarios:

#### 1. **Power conversion system**
- **SW12N65D-VB** is suitable for **switching power supplies (SMPS)** and **AC-DC power converters**, such as **power adapters**, **chargers**, **power tool power supplies**, etc. The high voltage tolerance (650V) of this MOSFET enables it to efficiently handle high voltage inputs and provide lower on-resistance, reducing losses and improving overall energy efficiency. Through high-speed switching and low conduction losses, this MOSFET helps optimize the overall efficiency of the power conversion system.

#### 2. **Inverter Applications**
- **SW12N65D-VB** is widely used in **solar inverters** and **wind power inverters**. Its maximum withstand voltage of 650V makes it suitable for handling the conversion of direct current (DC) to alternating current (AC) in solar and wind power systems. Because this MOSFET can operate stably at high voltages and effectively reduce heat losses, it is very suitable for these high-efficiency and long-cycle inverter systems.

#### 3. **Motor Drive and Control**
- In **motor drive systems**, **SW12N65D-VB** can be used to drive **medium to high power motors**, especially for **industrial automation**, **HVAC systems (heating, ventilation and air conditioning)**, **power tools** and **electric vehicle (EV) chargers**. The high voltage capability and low on-resistance of the MOSFET can provide efficient power conversion during the starting, control and speed regulation of the motor.

#### 4. **Battery Management System (BMS)**
- Due to the good **switching performance** and **voltage withstand performance** of this MOSFET, it also has important applications in **battery management systems (BMS)**, especially in battery packs for **electric vehicles (EVs)** and **energy storage systems**. The **650V** maximum drain voltage of the MOSFET can support power conversion of high-power battery packs, ensuring the safety and efficiency of the battery during charging and discharging.

#### 5. **Power Factor Correction (PFC)**
- **SW12N65D-VB** is suitable for **PFC circuits**, especially in high-voltage power supplies and **industrial equipment**, to help optimize power factors and reduce harmonic interference. The high voltage withstand and low on-resistance of this MOSFET enable it to effectively improve the efficiency of the power system, reduce power loss, and play an important role in various **power conversion** and **power conditioning** systems.

#### 6. **High Voltage LED Driver**
- In **high power LED driver** systems, especially in **commercial lighting** and **architectural lighting**, **SW12N65D-VB** can be used in LED lighting power supplies to provide stable high voltage power supply and ensure efficient operation of the power supply system. By reducing switching losses and optimizing power conversion, it can ensure high efficiency and long life of LED lighting equipment.

### Summary

**SW12N65D-VB** is a high voltage N-channel MOSFET, especially suitable for power electronic devices that require high voltage tolerance and high efficiency conversion. With **650V** maximum drain voltage, **12A** maximum drain current and **680mΩ@V_GS=10V** on-resistance, it can provide efficient power conversion solutions in applications such as switching power supplies, inverters, motor drives, LED lighting and power factor correction. Using **Plannar technology**, it can optimize the system's conduction loss and switching performance while ensuring high voltage stability, and is widely used in multiple power electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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