SW10N70K-VB TO252 Product details
Product introduction:
**SW10N70K-VB** is an **N-channel MOSFET** in **TO252** package, designed for high voltage and medium current applications. This MOSFET has a **700V maximum drain voltage (V_DS)** and **11A maximum drain current (I_D)**, and adopts **SJ_Multi-EPI technology**, which can provide higher breakdown voltage and lower on-resistance. Its **turn-on voltage (V_th)** is 3.5V, which is suitable for low-voltage gate drive applications and can effectively reduce switching losses. Its **on-resistance (R_DS(ON))** is 390mΩ@V_GS=10V, which can effectively improve efficiency and adapt to a wide range of power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain voltage (V_DS)**: 700V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Throughput voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- **390mΩ @ V_GS = 10V**
- **Maximum drain current (I_D)**: 11A
- **Maximum power loss (P_d)**: Depends on the working environment and heat dissipation conditions
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: SJ_Multi-EPI (Superjunction Multi-EPI)
- **Input capacitance (C_GS)**: Approx. 700pF @ V_DS = 50V
- **Drain-source capacitance (C_DS)**: Approx. 60pF @ V_DS = 50V
Domain and module applications:
**SW10N70K-VB** is suitable for multiple high-voltage power electronics applications, especially in areas that require higher withstand voltage and lower on-resistance. Specific application fields include:
1. **Power management and power conversion**
- **SW10N70K-VB** can be used in **high-voltage DC-DC converters**, **switching power supplies (SMPS)** and **AC-DC power converters**. Its **700V** maximum withstand voltage makes it suitable for handling high voltage inputs and is widely used in industrial power systems, power supply modules, and power conversion applications in home appliances and consumer electronics. Through efficient switching and low on-resistance, it can effectively improve system efficiency and reduce energy losses.
2. **Inverter applications**
- **SW10N70K-VB** is widely used in **solar inverters**, **wind power inverters** and **electric vehicle charging systems**. The MOSFET's high withstand voltage (700V) and medium current capability (11A) make it ideal for use in power conversion from direct current (DC) to alternating current (AC). In solar inverters in particular, it can efficiently convert the DC power from solar panels into AC power that can be used by the grid, while maintaining high efficiency and reducing heat loss.
3. **Motor Drive and Control**
- **SW10N70K-VB** is also suitable for **motor drive systems**, including **industrial motor drives** and **HVAC (heating, ventilation and air conditioning) systems**. Its high withstand voltage and low on-resistance characteristics enable it to efficiently drive medium to high power motors, ensuring fast response and efficient power conversion. Power tools, electric vehicles and other motor-driven equipment can benefit from the high efficiency of this MOSFET.
4. **Battery Management System (BMS)**
- **SW10N70K-VB** is suitable for the power conversion part of **Battery Management System (BMS)**, especially in **Electric Vehicles (EV)** and **Energy Storage Systems**. Through stable current control and low on-resistance, MOSFET can improve the charging and discharging efficiency of the battery, reduce losses and extend the service life of the battery. It can effectively support power management in high-voltage battery systems.
5. **LED Driver**
- **SW10N70K-VB** is also widely used in **LED lighting systems**, especially in **high-power LED driver**. The low switching loss and high voltage withstand capability of MOSFET enable it to efficiently drive LEDs, especially in applications that require high voltage or high power LED lighting, such as **industrial lighting**, **commercial lighting** and **architectural lighting**.
6. **Power Factor Correction (PFC) Circuit**
- **SW10N70K-VB** is also suitable for **PFC circuit**, which is widely used in equipment that needs to optimize power efficiency, help improve the power factor, and reduce harmonics in the system. It can effectively improve the performance of **power factor corrector** and is suitable for **high-efficiency power supply systems** and **industrial power management**.
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