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SW031R06ET-VB TO263 Product details
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1. **Product Introduction:**
**SW031R06ET-VB** is a high-performance N-channel MOSFET in **TO263** package, designed for high current applications. Its maximum drain-to-source voltage (VDS) is 60V, suitable for low-voltage and high-current power switching applications. With extremely low on-resistance (RDS(ON) only 3.2mΩ@VGS=10V), it can provide excellent efficiency and thermal performance under high current load. **SW031R06ET-VB** has a maximum drain current (ID) of up to 210A, which is particularly suitable for circuits with high efficiency requirements such as high-power power conversion, load switching and battery management systems.
This MOSFET uses **Trench technology**, which enables it to maintain a low on-resistance during operation and significantly reduce power losses. It is designed with high-frequency switching applications in mind and is suitable for power management and control circuits in a variety of industrial and consumer electronic devices.
**SW031R06ET-VB** is a high-performance N-channel MOSFET in **TO263** package, designed for high current applications. Its maximum drain-to-source voltage (VDS) is 60V, suitable for low-voltage and high-current power switching applications. With extremely low on-resistance (RDS(ON) only 3.2mΩ@VGS=10V), it can provide excellent efficiency and thermal performance under high current load. **SW031R06ET-VB** has a maximum drain current (ID) of up to 210A, which is particularly suitable for circuits with high efficiency requirements such as high-power power conversion, load switching and battery management systems.
This MOSFET uses **Trench technology**, which enables it to maintain a low on-resistance during operation and significantly reduce power losses. It is designed with high-frequency switching applications in mind and is suitable for power management and control circuits in a variety of industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. **Detailed parameter description:**
- **Model**: SW031R06ET-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 60V
- **Gate to source voltage (VGS)**: ±20V
- **Throw voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Package size**: TO263
- **Model**: SW031R06ET-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 60V
- **Gate to source voltage (VGS)**: ±20V
- **Throw voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Package size**: TO263
Domain and module applications：
3. **Application fields and module examples:**
**1. Power management system:**
**SW031R06ET-VB** is very suitable for **high-efficiency power management systems (Power Management ICs)** due to its low on-resistance and high current carrying capacity. It can provide efficient power conversion in applications such as **DC-DC converters**, **AC-DC converters** and **buck/boost converters**, and is particularly suitable for **server power**, **industrial power systems**, **high-power power adapters** and **portable power solutions**.
**2. Battery management system (BMS):**
In **battery management system (BMS)**, **SW031R06ET-VB** can be used as **battery charge and discharge control switch** to ensure high efficiency and safety during battery charge and discharge. Especially in the fields of electric vehicles (EV), power tools and energy storage systems, the low on-resistance and high current carrying capacity of MOSFET can effectively reduce power loss and improve the overall energy efficiency of the system.
**3. Electric vehicle (EV) power management: **
In electric vehicles, **SW031R06ET-VB** can be used in **motor drive systems** and **battery management systems** to control high current loads. Its drain current capability of up to 210A enables it to handle the high current requirements in electric vehicles, while its low power consumption ensures efficient charging and discharging of the battery, improving the vehicle's endurance.
**4. High-efficiency switching power supply modules (SMPS): **
This MOSFET is widely used in **switching power supply modules (SMPS), especially in **AC-DC converters** and **DC-DC converters** that require high efficiency and low losses. For example, it can play an important role in **LED driver power supplies**, **power factor correction (PFC) circuits** and **solar inverters**, helping to improve conversion efficiency and reduce heat generation.
**5. High-power load switch: **
**SW031R06ET-VB** As a high-power load switch, it can provide high-current switching capabilities and is suitable for **industrial automation systems**, **smart home devices**, **robot control systems** and other occasions. In these applications, MOSFET acts as an efficient current switch to ensure that the equipment can still work stably under high-speed and high-load conditions.
**1. Power management system:**
**SW031R06ET-VB** is very suitable for **high-efficiency power management systems (Power Management ICs)** due to its low on-resistance and high current carrying capacity. It can provide efficient power conversion in applications such as **DC-DC converters**, **AC-DC converters** and **buck/boost converters**, and is particularly suitable for **server power**, **industrial power systems**, **high-power power adapters** and **portable power solutions**.
**2. Battery management system (BMS):**
In **battery management system (BMS)**, **SW031R06ET-VB** can be used as **battery charge and discharge control switch** to ensure high efficiency and safety during battery charge and discharge. Especially in the fields of electric vehicles (EV), power tools and energy storage systems, the low on-resistance and high current carrying capacity of MOSFET can effectively reduce power loss and improve the overall energy efficiency of the system.
**3. Electric vehicle (EV) power management: **
In electric vehicles, **SW031R06ET-VB** can be used in **motor drive systems** and **battery management systems** to control high current loads. Its drain current capability of up to 210A enables it to handle the high current requirements in electric vehicles, while its low power consumption ensures efficient charging and discharging of the battery, improving the vehicle's endurance.
**4. High-efficiency switching power supply modules (SMPS): **
This MOSFET is widely used in **switching power supply modules (SMPS), especially in **AC-DC converters** and **DC-DC converters** that require high efficiency and low losses. For example, it can play an important role in **LED driver power supplies**, **power factor correction (PFC) circuits** and **solar inverters**, helping to improve conversion efficiency and reduce heat generation.
**5. High-power load switch: **
**SW031R06ET-VB** As a high-power load switch, it can provide high-current switching capabilities and is suitable for **industrial automation systems**, **smart home devices**, **robot control systems** and other occasions. In these applications, MOSFET acts as an efficient current switch to ensure that the equipment can still work stably under high-speed and high-load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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