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SW029R04ET-VB TO263 Product details
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1. Product Introduction (SW029R04ET-VB)
The SW029R04ET-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current and low on-resistance applications. It has a maximum drain-source voltage (V_DS) of 40V and a maximum drain current (I_D) of 150A, and provides an ultra-low on-resistance (R_DS(ON)) of 2mΩ at V_GS = 10V, ensuring efficient current transfer with low energy loss. This MOSFET uses Trench technology, has excellent switching characteristics and low conduction losses, and is very suitable for high-efficiency power supply design.
With its excellent on-performance, the SW029R04ET-VB is suitable for a variety of power management applications, including switching power supplies, battery management systems, high-performance motor drives, and other high-current power electronic devices. Its high current handling capability and low on-resistance make it an ideal choice for power control systems that require high efficiency and high reliability.
The SW029R04ET-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current and low on-resistance applications. It has a maximum drain-source voltage (V_DS) of 40V and a maximum drain current (I_D) of 150A, and provides an ultra-low on-resistance (R_DS(ON)) of 2mΩ at V_GS = 10V, ensuring efficient current transfer with low energy loss. This MOSFET uses Trench technology, has excellent switching characteristics and low conduction losses, and is very suitable for high-efficiency power supply design.
With its excellent on-performance, the SW029R04ET-VB is suitable for a variety of power management applications, including switching power supplies, battery management systems, high-performance motor drives, and other high-current power electronic devices. Its high current handling capability and low on-resistance make it an ideal choice for power control systems that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: SW029R04ET-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 40V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 2mΩ @ V_GS = 10V
- 2.5mΩ @ V_GS = 4.5V
- **Maximum leakage current (I_D)**: 150A
- **Technology**: Trench
- **Maximum power dissipation (P_D)**: 250W (maximum value, subject to specific conditions)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**:
- **RθJC**: 1.0°C/W (package to chip contact)
- **Model**: SW029R04ET-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 40V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 2mΩ @ V_GS = 10V
- 2.5mΩ @ V_GS = 4.5V
- **Maximum leakage current (I_D)**: 150A
- **Technology**: Trench
- **Maximum power dissipation (P_D)**: 250W (maximum value, subject to specific conditions)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**:
- **RθJC**: 1.0°C/W (package to chip contact)
Domain and module applications：
3. Application fields and modules
**1. High-efficiency switching power supply (SMPS): **
SW029R04ET-VB is suitable for high-current and high-efficiency switching power supply design. Its ultra-low on-resistance minimizes its energy loss during operation, making it very suitable for high-power DC-DC converters, AC-DC power supplies, solar inverters and other applications. Due to its excellent high-current handling capability, it can effectively improve power conversion efficiency and reduce heat generation.
**2. Electric vehicles and battery management systems: **
This MOSFET is widely used in battery management systems (BMS) of electric vehicles such as electric vehicles (EV), electric motorcycles, and electric bicycles. It can help efficiently control the charging and discharging process of the battery, ensuring the stability and safety of the battery during charging and discharging. In addition, it is also suitable for motor drives to provide efficient power transmission.
**3. Power Electronics and Motor Drives: **
SW029R04ET-VB is suitable for various power electronic devices, such as motor control systems, industrial automation equipment, etc. Its high current carrying capacity and low on-resistance make it an ideal choice for motor drive systems, and can be used to control the start, stop and speed regulation of DC motors, AC motors or stepper motors. It is also widely used in industrial automation, robot control and home appliances.
**4. Power Protection and Power Limitation: **
In high-power applications, this MOSFET can also be used as a power protection component, such as overcurrent protection, overvoltage protection and short-circuit protection circuits. It can quickly cut off the current when the current is too large or the voltage is too high to ensure the safe operation of the system. Especially in high-efficiency power control and protection modules, its low on-resistance can effectively reduce power loss and improve system reliability.
**5. Server Power and Data Center: **
SW029R04ET-VB is also suitable for power modules in data centers and servers. Servers and data centers typically require high-efficiency power conversion and load handling capabilities, and the low on-resistance and high current capability provided by this MOSFET can maintain efficient operation of the system under these high-load conditions, especially in terms of conversion efficiency and temperature rise control.
**1. High-efficiency switching power supply (SMPS): **
SW029R04ET-VB is suitable for high-current and high-efficiency switching power supply design. Its ultra-low on-resistance minimizes its energy loss during operation, making it very suitable for high-power DC-DC converters, AC-DC power supplies, solar inverters and other applications. Due to its excellent high-current handling capability, it can effectively improve power conversion efficiency and reduce heat generation.
**2. Electric vehicles and battery management systems: **
This MOSFET is widely used in battery management systems (BMS) of electric vehicles such as electric vehicles (EV), electric motorcycles, and electric bicycles. It can help efficiently control the charging and discharging process of the battery, ensuring the stability and safety of the battery during charging and discharging. In addition, it is also suitable for motor drives to provide efficient power transmission.
**3. Power Electronics and Motor Drives: **
SW029R04ET-VB is suitable for various power electronic devices, such as motor control systems, industrial automation equipment, etc. Its high current carrying capacity and low on-resistance make it an ideal choice for motor drive systems, and can be used to control the start, stop and speed regulation of DC motors, AC motors or stepper motors. It is also widely used in industrial automation, robot control and home appliances.
**4. Power Protection and Power Limitation: **
In high-power applications, this MOSFET can also be used as a power protection component, such as overcurrent protection, overvoltage protection and short-circuit protection circuits. It can quickly cut off the current when the current is too large or the voltage is too high to ensure the safe operation of the system. Especially in high-efficiency power control and protection modules, its low on-resistance can effectively reduce power loss and improve system reliability.
**5. Server Power and Data Center: **
SW029R04ET-VB is also suitable for power modules in data centers and servers. Servers and data centers typically require high-efficiency power conversion and load handling capabilities, and the low on-resistance and high current capability provided by this MOSFET can maintain efficient operation of the system under these high-load conditions, especially in terms of conversion efficiency and temperature rise control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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