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SVF3N80M-VB Product details
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1. **Product Introduction**
**SVF3N80M-VB** is a high-voltage single N-channel MOSFET in TO251 package, designed for high-voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 800V, which is suitable for medium and high voltage power management and power conversion modules, and can withstand high voltage without damage. Its maximum drain current (ID) is 2A, which is suitable for medium power switching applications. The threshold voltage (Vth) is 3.5V, which ensures stable conduction at a lower gate-source voltage. The on-resistance (RDS(ON)) is 2600mΩ@VGS=10V. Although it is higher than other MOSFETs, it is still suitable for some power applications with not particularly high power requirements. Using **SJ_Multi-EPI** (super junction multilayer technology) technology, this MOSFET has good voltage stability and low switching loss, and is suitable for high voltage power supplies and protection circuits.
**SVF3N80M-VB** is a high-voltage single N-channel MOSFET in TO251 package, designed for high-voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 800V, which is suitable for medium and high voltage power management and power conversion modules, and can withstand high voltage without damage. Its maximum drain current (ID) is 2A, which is suitable for medium power switching applications. The threshold voltage (Vth) is 3.5V, which ensures stable conduction at a lower gate-source voltage. The on-resistance (RDS(ON)) is 2600mΩ@VGS=10V. Although it is higher than other MOSFETs, it is still suitable for some power applications with not particularly high power requirements. Using **SJ_Multi-EPI** (super junction multilayer technology) technology, this MOSFET has good voltage stability and low switching loss, and is suitable for high voltage power supplies and protection circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **Detailed parameter description**
- **Model**: SVF3N80M-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI (Super Junction Multilayer Technology)
- **Model**: SVF3N80M-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI (Super Junction Multilayer Technology)
Domain and module applications：
3. **Application fields and module examples**
1. **High voltage power switch and power management**
- **SVF3N80M-VB** is suitable for high voltage power management and power switch systems, especially in applications where high withstand voltage is required. Its maximum drain-source voltage of 800V makes it suitable for high voltage power converters such as AC-DC power adapters, inverters and DC-DC converters. Despite its large on-resistance, it is still suitable for high voltage power switch control, especially for medium power applications, because it can work stably in high voltage environments.
2. **Switching Power Supply (SMPS)**
- In switching power supplies (SMPS), SVF3N80M-VB can be used as a high voltage switching element, especially in applications that require high voltage and medium current. Its 650V withstand voltage is suitable for use in DC-AC and AC-DC conversion circuits, which can effectively convert current and control voltage output. This MOSFET is also suitable for voltage regulation modules in power supplies, which can improve system efficiency while maintaining stability.
3. **High-voltage LED driver circuit**
- In LED driver circuits, **SVF3N80M-VB** is suitable for LED applications that require high voltage, such as high-power LED lighting and industrial lighting systems. This MOSFET is able to effectively control the current flow of LED lamps, especially in high-voltage power supply environments. Its 800V withstand voltage capability enables it to handle high voltages from the AC power supply in LED driver circuits, ensuring stable and efficient operation of LED lamps.
4. **Power tool and home appliance power management**
- **SVF3N80M-VB** is also widely used in power management modules for power tools and home appliances, especially in battery-powered tools and home appliances. Due to its high withstand voltage capability, it is able to work stably in high-voltage batteries and power circuits, ensuring that the battery charging and discharging process is effectively managed. In addition, its low current requirement makes it suitable for small power supply modules, providing stable power conversion and battery protection functions.
5. **Battery Management System (BMS)**
- In the battery management system (BMS), the SVF3N80M-VB can be used as a switching element to manage the charging and discharging process of high-voltage batteries. Especially in the application of lithium batteries and high-voltage battery packs, this MOSFET can withstand high voltages and protect the battery from overvoltage damage. It can effectively provide control during the charging and discharging process of the battery to ensure the safety and efficiency of the battery system.
6. **High-voltage protection circuit**
- **SVF3N80M-VB** is suitable for high-voltage protection circuits, especially in industrial power systems, power electronic equipment and communication equipment. In these high-voltage environments, the SVF3N80M-VB can provide reliable overvoltage protection and overcurrent protection to prevent power equipment from being damaged by voltage shocks and current overloads. Its 650V withstand voltage characteristics make it excellent in power equipment, especially in situations where stable protection is required under high voltage environments.
1. **High voltage power switch and power management**
- **SVF3N80M-VB** is suitable for high voltage power management and power switch systems, especially in applications where high withstand voltage is required. Its maximum drain-source voltage of 800V makes it suitable for high voltage power converters such as AC-DC power adapters, inverters and DC-DC converters. Despite its large on-resistance, it is still suitable for high voltage power switch control, especially for medium power applications, because it can work stably in high voltage environments.
2. **Switching Power Supply (SMPS)**
- In switching power supplies (SMPS), SVF3N80M-VB can be used as a high voltage switching element, especially in applications that require high voltage and medium current. Its 650V withstand voltage is suitable for use in DC-AC and AC-DC conversion circuits, which can effectively convert current and control voltage output. This MOSFET is also suitable for voltage regulation modules in power supplies, which can improve system efficiency while maintaining stability.
3. **High-voltage LED driver circuit**
- In LED driver circuits, **SVF3N80M-VB** is suitable for LED applications that require high voltage, such as high-power LED lighting and industrial lighting systems. This MOSFET is able to effectively control the current flow of LED lamps, especially in high-voltage power supply environments. Its 800V withstand voltage capability enables it to handle high voltages from the AC power supply in LED driver circuits, ensuring stable and efficient operation of LED lamps.
4. **Power tool and home appliance power management**
- **SVF3N80M-VB** is also widely used in power management modules for power tools and home appliances, especially in battery-powered tools and home appliances. Due to its high withstand voltage capability, it is able to work stably in high-voltage batteries and power circuits, ensuring that the battery charging and discharging process is effectively managed. In addition, its low current requirement makes it suitable for small power supply modules, providing stable power conversion and battery protection functions.
5. **Battery Management System (BMS)**
- In the battery management system (BMS), the SVF3N80M-VB can be used as a switching element to manage the charging and discharging process of high-voltage batteries. Especially in the application of lithium batteries and high-voltage battery packs, this MOSFET can withstand high voltages and protect the battery from overvoltage damage. It can effectively provide control during the charging and discharging process of the battery to ensure the safety and efficiency of the battery system.
6. **High-voltage protection circuit**
- **SVF3N80M-VB** is suitable for high-voltage protection circuits, especially in industrial power systems, power electronic equipment and communication equipment. In these high-voltage environments, the SVF3N80M-VB can provide reliable overvoltage protection and overcurrent protection to prevent power equipment from being damaged by voltage shocks and current overloads. Its 650V withstand voltage characteristics make it excellent in power equipment, especially in situations where stable protection is required under high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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