Product introduction：
SVF18N50F-VB MOSFET Product Introduction
**Model: ** SVF18N50F-VB
**Package Type: ** TO220
**Configuration: ** Single-N-Channel
**Maximum Drain-Source Voltage (VDS): ** 650V
**Maximum Gate-Source Voltage (VGS): ** ±30V
**Gate-Source Threshold Voltage (Vth): ** 3.5V
**On-Resistance (RDS(ON)): ** 160mΩ @ VGS = 10V
**Maximum Drain Current (ID): ** 20A
**Technology: ** SJ_Multi-EPI
SVF18N50F-VB is an N-channel MOSFET manufactured based on SJ_Multi-EPI technology. It uses a TO220 package and has a high drain-source voltage of 650V. It is suitable for high-voltage power conversion, switching circuits, and other applications requiring high voltage and medium current capabilities. Its gate-source threshold voltage is 3.5V, the on-resistance (RDS(ON)) is 160mΩ @ VGS = 10V, and the maximum drain current is 20A, which can provide efficient switching performance in various power conversion and drive systems.
This MOSFET uses SJ_Multi-EPI technology, which provides lower on-resistance and higher current carrying capacity, making it perform well in high-voltage applications, especially in medium-power power supplies, inverters, and motor drives.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
SVF18N50F-VB MOSFET Detailed parameter description
- **Package type: ** TO220
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Gate-source threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 160mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 20A
- **Maximum power dissipation (Pd): ** 50W
- **Operating temperature range: ** -55°C to +150°C
- **Gate charge (Qg): ** 45nC
- **Reverse recovery time (trr): ** 150ns
SVF18N50F-VB has a maximum drain-source voltage of 650V and a maximum drain current of 20A, suitable for high-voltage power supply and power conversion applications. Its on-resistance (RDS(ON)) is 160mΩ, which can provide lower switching losses and higher efficiency. The gate-source voltage threshold of the MOSFET is 3.5V, which can start at a lower gate voltage, meeting the requirements of low-power drive.
The MOSFET adopts SJ_Multi-EPI technology, which enables it to have good switching performance and high current carrying capacity in high-voltage applications. In addition, the MOSFET has a wide operating temperature range and can operate stably in an environment of -55°C to +150°C, adapting to complex application environments.
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Domain and module applications：
SVF18N50F-VB MOSFET Application Fields and Module Examples
**1. Power Management Systems**
SVF18N50F-VB MOSFET is very suitable for high-voltage power management systems. Due to its 650V drain-source voltage and low on-resistance, it can provide high efficiency in power conversion and regulation, and is widely used in switching power supplies (SMPS), DC-DC converters, and AC-DC converters. Especially in industrial power supplies and communication power supplies that require higher voltage tolerance, this MOSFET can achieve higher conversion efficiency and stable current control.
**2. Inverters**
This MOSFET can be widely used in inverters and AC motor drive systems, especially in medium-power inverters, to provide efficient power conversion and current regulation. Its 650V drain-source voltage makes it suitable for high-voltage inverter applications such as wind power generation systems, electric vehicle drive systems, and brushless DC motor (BLDC) drive systems. The low on-resistance of the MOSFET helps reduce switching losses and improve the efficiency of the motor drive system.
**3. Motor Drivers**
SVF18N50F-VB is suitable for various motor drive applications, especially in scenarios requiring higher voltage and current, such as power tools, electric vehicles, electric door drives, etc. The MOSFET can withstand large current surges when the motor starts and provide smooth power output, ensuring the efficient operation of the motor drive system, reducing energy loss and improving system reliability.
**4. Solar Inverters**
SVF18N50F-VB MOSFET is widely used in solar inverters, especially in photovoltaic power generation systems to convert solar energy into AC power required by the grid. The maximum drain-source voltage of 650V makes it suitable for high-voltage scenarios in solar systems, while the low on-resistance helps reduce energy loss and improve system efficiency. In the integration of solar panels and battery energy storage systems, this MOSFET can provide efficient and stable power conversion.
**5. Battery Chargers**
SVF18N50F-VB MOSFET is also suitable for high-power battery charger systems. Especially in battery packs that require high voltage charging, such as electric vehicles, drones, etc., MOSFET can provide efficient current regulation and power conversion, reduce losses during charging, and improve charging speed and efficiency. The low RDS(ON) characteristics enable it to handle higher currents and maintain low temperature operation during charging, ensuring system stability.
**6. Power Switching Devices**
SVF18N50F-VB MOSFET can be used as a core component in power switching devices, especially in high-voltage power systems, electrical protection and control equipment. Its high voltage tolerance and good switching performance make it an important application in power control and switching devices, including playing an important role in high-power and medium-current power management systems.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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