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SVD840-VB Product details

Product introduction:

SVD840-VB MOSFET Product Introduction

**Model:** SVD840-VB
**Package Type:** TO220F
**Configuration:** Single-N-Channel
**Maximum Drain-Source Voltage (VDS):** 650V
**Maximum Gate-Source Voltage (VGS):** ±30V
**Gate-Source Threshold Voltage (Vth):** 3.5V
**On-Resistance (RDS(ON)):** 680mΩ @ VGS = 10V
**Maximum Drain Current (ID):** 12A
**Technology:** Plannar Technology

SVD840-VB is an N-channel MOSFET in TO220F package, suitable for high voltage applications of 650V and capable of providing a drain current of 12A. Its gate-source threshold voltage is 3.5V and its on-resistance (RDS(ON)) is 680mΩ @VGS = 10V. MOSFET uses Plannar technology to provide stable performance and high reliability, and is particularly suitable for high-voltage power conversion, switching power supplies, inverters and other fields.

This MOSFET has high voltage tolerance and low leakage current, and is widely used in power conversion, inverters and motor drives that require high voltage and high power.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
SVD840-VB MOSFET Detailed parameter description

- **Package type: ** TO220F
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (VDS): ** 650V
- **Maximum gate-source voltage (VGS): ** ±30V
- **Gate-source threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 680mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 12A
- **Maximum power dissipation (Pd): ** 75W
- **Operating temperature range: ** -55°C to +150°C
- **Gate charge (Qg): ** 80nC
- **Drive current (Idr): ** 20A

The SVD840-VB MOSFET has a maximum drain-source voltage of 650V and a drain current of 12A, which can provide excellent switching characteristics in high-voltage applications. Its on-resistance (RDS(ON)) is 680mΩ, which is suitable for power management and power conversion. The MOSFET uses Plannar technology, which provides lower on-resistance and higher current carrying capacity, enabling it to have better performance in high-power switching.

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Domain and module applications:

SVD840-VB MOSFET Application Fields and Module Examples

**1. Power Management Systems**
SVD840-VB MOSFET is suitable for high-voltage power management systems, especially in switch mode power supplies (SMPS) below 650V. Its high voltage tolerance and low on-resistance make it very suitable for DC-DC converters and AC-DC power systems, providing efficient voltage conversion and reducing system power loss. In industrial power supplies, server power supplies, and high-power power supply systems, efficient power conversion and current control can be achieved.

**2. Inverters**
In inverters and motor drive systems, SVD840-VB MOSFET can provide efficient power conversion for AC motor speed regulation. It is particularly suitable for high-voltage inverter applications and can achieve efficient current switching in inverters, especially in high-voltage inverters and brushless DC motor (BLDC) drives. The high voltage handling capability and low RDS(ON) characteristics of the MOSFET make it suitable for drive systems in industrial automation, power tools, and electric vehicles.

**3. Motor Drivers**
This MOSFET is suitable for a variety of motor drive applications, including motor drives in home appliances, industrial automation, and robotic systems. Due to its high voltage and high current capabilities, the SVD840-VB is able to provide stable and reliable current control under high load and high current conditions, and performs well in power tool, fan, and pump motor drive applications.

**4. Solar Inverters**
The SVD840-VB MOSFET is widely used in solar inverters, which can convert the DC power generated by solar panels into AC power. Its high drain-source voltage of 650V makes it suitable for high voltage scenarios in solar inverters, and can provide efficient and stable power conversion. It is widely used in photovoltaic power generation systems, especially in solar power generation facilities that require high current handling.

**5. Battery Chargers**
The SVD840-VB can be used for battery chargers, especially in scenarios where higher voltage charging is required. Because it can withstand higher voltages (650V), it is very suitable for charging large battery packs, such as charging systems for electric vehicles, power tools, and other energy storage devices. The low on-resistance and stability of the MOSFET ensure efficient and reliable current regulation during battery charging.

**6. Power Switching Devices**
The MOSFET is also suitable for power switching devices, such as power switches and medium and high voltage relays. Its high voltage and high current carrying capabilities enable it to provide excellent performance in systems that require high power switching, and is widely used in power electronics, equipment protection, and electrical control systems.

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In summary, the SVD840-VB is a high-voltage, high-power MOSFET that is particularly suitable for high-voltage power systems such as power management, inverters, motor drives, battery chargers, and solar inverters. Its high voltage withstand capability, low on-resistance and stable switching characteristics enable it to perform well in various high-efficiency applications and is an ideal choice for high-voltage power conversion and current control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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