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SUU50N10-18P-VB Product details
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SUU50N10-18P-VB MOSFET Product Introduction
SUU50N10-18P-VB is an N-channel MOSFET in TO251 package with a maximum drain-source voltage of 100V and a maximum drain current of 65A. Its low on-resistance (RDS(ON) of 12.5mΩ) enables it to perform well in high-current applications, especially at a gate-source voltage of 10V, which can reduce power losses and improve system efficiency. It uses Trench technology to provide excellent switching characteristics and is suitable for applications requiring high efficiency and low power losses. This MOSFET is widely used in power management, electric vehicles, motor drives, and other high-power switching circuits.
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SUU50N10-18P-VB is an N-channel MOSFET in TO251 package with a maximum drain-source voltage of 100V and a maximum drain current of 65A. Its low on-resistance (RDS(ON) of 12.5mΩ) enables it to perform well in high-current applications, especially at a gate-source voltage of 10V, which can reduce power losses and improve system efficiency. It uses Trench technology to provide excellent switching characteristics and is suitable for applications requiring high efficiency and low power losses. This MOSFET is widely used in power management, electric vehicles, motor drives, and other high-power switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
SUU50N10-18P-VB MOSFET Detailed parameter description
- **Package type: ** TO251
- **Configuration: ** Unipolar N-channel
- **Maximum drain-source voltage (VDS): ** 100V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Gate-source threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): ** 12.5mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 65A
- **Maximum power dissipation (Pd): ** 150W
- **Operating temperature range: ** -55°C to +150°C
- **Gate charge (Qg): ** 85nC
- **Drive current (Idr): ** 20A
SUU50N10-18P-VB MOSFET has a drain-source voltage of 100V and a drain current capacity of 65A, suitable for high-efficiency switching power supplies and current control applications. Its 12.5mΩ on-resistance and low gate charge (85nC) enable faster switching speeds and effectively reduce losses, making it particularly suitable for use in high-frequency, high-efficiency power systems. In addition, the MOSFET's high power carrying capacity and wide temperature operating range (-55°C to +150°C) ensure reliability and stability in harsh environments.
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- **Package type: ** TO251
- **Configuration: ** Unipolar N-channel
- **Maximum drain-source voltage (VDS): ** 100V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Gate-source threshold voltage (Vth): ** 1.8V
- **On-resistance (RDS(ON)): ** 12.5mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 65A
- **Maximum power dissipation (Pd): ** 150W
- **Operating temperature range: ** -55°C to +150°C
- **Gate charge (Qg): ** 85nC
- **Drive current (Idr): ** 20A
SUU50N10-18P-VB MOSFET has a drain-source voltage of 100V and a drain current capacity of 65A, suitable for high-efficiency switching power supplies and current control applications. Its 12.5mΩ on-resistance and low gate charge (85nC) enable faster switching speeds and effectively reduce losses, making it particularly suitable for use in high-frequency, high-efficiency power systems. In addition, the MOSFET's high power carrying capacity and wide temperature operating range (-55°C to +150°C) ensure reliability and stability in harsh environments.
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Domain and module applications：
SUU50N10-18P-VB MOSFET Application Fields and Module Examples
**1. Power Management Systems**
SUU50N10-18P-VB MOSFET is widely used in DC-DC converters, switching power supplies (SMPS) and power management modules, especially in power systems that require higher efficiency. Its low RDS(ON) characteristics reduce energy loss during power conversion and improve conversion efficiency and system stability. In 12V, 24V and even 48V systems, this MOSFET can provide excellent switching performance and is widely used in industrial power supplies, server power supplies and other fields.
**2. Electric Vehicles**
MOSFETs that can carry large currents are required in the battery management system (BMS) and drive systems of electric vehicles, and SUU50N10-18P-VB can meet these needs. Its 65A drain current capability is suitable for high current requirements in battery charging, discharging control and motor drive. Especially in the power inverter and battery charger of electric vehicles, it can provide efficient current switching function, reduce system power loss, extend battery life and improve energy efficiency.
**3. Motor Drivers**
This MOSFET is suitable for various industrial motor drive applications, especially in servo motor, stepper motor and brushless DC motor (BLDC) drive systems. Due to its low on-resistance and high current carrying capacity, SUU50N10-18P-VB can efficiently transfer power, reduce heat generation, and provide efficient motor drive, which is particularly suitable for industrial automation, power tools and robots.
**4. Battery Chargers**
SUU50N10-18P-VB can provide efficient current regulation in battery chargers, which is suitable for battery charging systems such as lithium batteries and lead-acid batteries. Due to its low on-resistance characteristics, the heat loss during the charging process is greatly reduced, thereby improving the charging efficiency, especially in fast charging and high current charging scenarios, ensuring stable operation of the system and increasing the charging speed.
**5. Inverters and Solar Systems**
In inverters and solar power generation systems, SUU50N10-18P-VB MOSFET can achieve efficient power conversion, especially in the process of converting DC power generated by solar energy into AC power. Its high current carrying capacity (65A) and low RDS(ON) enable it to provide efficient performance in high-power and high-frequency applications. It is widely used in inverters of photovoltaic power generation systems to improve the overall efficiency of the system.
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In general, SUU50N10-18P-VB MOSFET is suitable for multiple high-power and high-efficiency applications with its low on-resistance, high current carrying capacity and excellent switching performance. Whether in power management, electric vehicles, motor drives, battery charging or inverters, it can provide efficient and reliable current control solutions and is an indispensable component in efficient power and drive systems.
**1. Power Management Systems**
SUU50N10-18P-VB MOSFET is widely used in DC-DC converters, switching power supplies (SMPS) and power management modules, especially in power systems that require higher efficiency. Its low RDS(ON) characteristics reduce energy loss during power conversion and improve conversion efficiency and system stability. In 12V, 24V and even 48V systems, this MOSFET can provide excellent switching performance and is widely used in industrial power supplies, server power supplies and other fields.
**2. Electric Vehicles**
MOSFETs that can carry large currents are required in the battery management system (BMS) and drive systems of electric vehicles, and SUU50N10-18P-VB can meet these needs. Its 65A drain current capability is suitable for high current requirements in battery charging, discharging control and motor drive. Especially in the power inverter and battery charger of electric vehicles, it can provide efficient current switching function, reduce system power loss, extend battery life and improve energy efficiency.
**3. Motor Drivers**
This MOSFET is suitable for various industrial motor drive applications, especially in servo motor, stepper motor and brushless DC motor (BLDC) drive systems. Due to its low on-resistance and high current carrying capacity, SUU50N10-18P-VB can efficiently transfer power, reduce heat generation, and provide efficient motor drive, which is particularly suitable for industrial automation, power tools and robots.
**4. Battery Chargers**
SUU50N10-18P-VB can provide efficient current regulation in battery chargers, which is suitable for battery charging systems such as lithium batteries and lead-acid batteries. Due to its low on-resistance characteristics, the heat loss during the charging process is greatly reduced, thereby improving the charging efficiency, especially in fast charging and high current charging scenarios, ensuring stable operation of the system and increasing the charging speed.
**5. Inverters and Solar Systems**
In inverters and solar power generation systems, SUU50N10-18P-VB MOSFET can achieve efficient power conversion, especially in the process of converting DC power generated by solar energy into AC power. Its high current carrying capacity (65A) and low RDS(ON) enable it to provide efficient performance in high-power and high-frequency applications. It is widely used in inverters of photovoltaic power generation systems to improve the overall efficiency of the system.
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In general, SUU50N10-18P-VB MOSFET is suitable for multiple high-power and high-efficiency applications with its low on-resistance, high current carrying capacity and excellent switching performance. Whether in power management, electric vehicles, motor drives, battery charging or inverters, it can provide efficient and reliable current control solutions and is an indispensable component in efficient power and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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