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SUP60N06-12P-GE3-VB Product details

Product introduction:

Product Introduction

**SUP60N06-12P-GE3-VB** is a high-efficiency **N-Channel MOSFET**, packaged in **TO220**, designed for high-current, high-efficiency power conversion and switching applications. Its maximum drain-source voltage **VDS** is **60V**, the maximum drain current **ID** is **60A**, and it has a very low on-resistance, **RDS(ON)** is **11mΩ** @ VGS = 10V, ensuring extremely low power loss and high efficiency during the switching process. This MOSFET adopts **Trench technology**, has excellent thermal performance and high switching speed, and is suitable for a variety of high-power applications that require fast switching and low conduction losses, such as **power management systems, motor drive systems, industrial automation equipment**, etc.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 1.7V 60A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 60A
- **Technology type**: Trench
- **Maximum power loss**: Specific values can be provided in the data sheet
- **Switching speed**: With fast response capability, suitable for high-efficiency applications.

Domain and module applications:

Applicable fields and modules

**1. Power management system (PSU)

**SUP60N06-12P-GE3-VB** is suitable for **power management system (PSU)**, such as **switching power supply (SMPS)**, **DC-DC converter** and **AC-DC power converter**. Its low on-resistance and high current carrying capacity make it an ideal choice for high-efficiency power supply solutions, which can reduce energy loss and improve power efficiency. It is suitable for **server power supply**, **power adapter**, and **industrial power supply** and other equipment.

**2. Motor drive system

In **motor drive systems**, especially **brushless DC motor (BLDC)** and **stepper motor drive** systems, **SUP60N06-12P-GE3-VB** can be used for high-efficiency current regulation. Because it can withstand high current loads and maintain low conduction losses, this MOSFET is particularly suitable for motor control and drive in **power tools, automation equipment, robots** and **electric vehicles**.

**3. Battery Management System (BMS)**

In **battery management system (BMS)**, **SUP60N06-12P-GE3-VB** can be used for **charge and discharge control** of batteries, especially in **lithium battery management**, to help accurately regulate current and ensure safe and stable operation of batteries. Due to its low on-resistance characteristics, it can effectively reduce heat generation during battery charging and discharging, and improve the efficiency and reliability of the overall system. Common application scenarios include **UPS battery packs**, **electric vehicle battery management**, and **solar energy storage systems**.

**4. Power conversion and inverter applications**

**SUP60N06-12P-GE3-VB** is very suitable for use in **power converters** and **inverters**. In **photovoltaic inverters** and **wind power generation systems**, the fast switching characteristics and high current carrying capacity of MOSFET can ensure efficient energy conversion and distribution, reduce power loss, and provide stable output. Its **60V** voltage tolerance enables it to work stably in high voltage environments.

**5. Industrial Automation and Control Systems**

In **industrial automation** and **control systems**, **SUP60N06-12P-GE3-VB** can be used for **inverters**, **PLC control systems**, and **power conditioning modules**. Its low **RDS(ON)** value and high **ID** capability ensure efficient switching and precise current regulation in industrial environments, thereby improving **equipment control accuracy** and **work efficiency**, and is suitable for **robots, automated assembly lines**, and **industrial motor control systems**.

**6. Consumer electronics**

This MOSFET can also be used in **consumer electronics**, especially in devices that require efficient power conversion, such as **high-efficiency battery chargers**, **electric toys**, and **small household appliances**. These devices require low-energy, high-performance switching components, and the **SUP60N06-12P-GE3-VB**'s low on-resistance and high current carrying capacity just meet this need.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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