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SUP57N20-33-VB Product details

Product introduction:

**SUP57N20-33-VB MOSFET Product Introduction**

**SUP57N20-33-VB** is a **single N-channel MOSFET**, in **TO220 package**, designed for high voltage, high current applications. The **maximum drain-source voltage (V_DS)** of this MOSFET is **200V**, with **high current carrying capacity (I_D)**, up to **80A**. Its **gate threshold voltage (V_th)** is **4V**, suitable for applications with higher voltage control. This model of MOSFET has a low **on-resistance (R_DS(ON))** of **17mΩ** (@ V_GS = 10V), ensuring efficient energy conversion and low heat loss.

Using **Trench technology**, this MOSFET has excellent switching performance and low conduction loss, suitable for scenarios requiring high efficiency and high current handling in power control and power conversion systems. Whether in applications such as switching power supplies, motor drives or inverters, the SUP57N20-33-VB can provide reliable high-performance performance, reduce energy losses and improve overall system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 4V 80A 17mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 4V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 4V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
**SUP57N20-33-VB MOSFET detailed parameter description**

- **Model**: SUP57N20-33-VB
- **Package type**: TO220
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 4V
- **On-resistance (R_DS(ON))**:
- 17mΩ (@ V_GS = 10V)
- **Maximum drain current (I_D)**: 80A
- **Technology**: Trench technology
- **Maximum power consumption**: **150W** (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (C_gs)**: 2000pF (@ V_DS = 200V, V_GS = 0V)
- **Total gate charge (Qg)**: 120nC (@ V_DS = 200V, V_GS = 10V)
- **Reverse recovery time (T_rr)**: 200ns (typical)

Domain and module applications:

**Application areas and module examples of SUP57N20-33-VB MOSFET**

1. **Switching Power Supply (SMPS)**
**SUP57N20-33-VB** MOSFET is very suitable for **Switching Power Supply (SMPS)** systems, especially in **DC-DC converters** and **AC-DC converters**. It provides high current carrying capacity (80A) to ensure high efficiency during power conversion, and its **low on-resistance (R_DS(ON) = 17mΩ)** can greatly reduce power losses when current flows.

2. **Motor Drive System**
In **motor drive systems**, especially **DC motor drives** or **stepper motor drive systems**, **SUP57N20-33-VB** MOSFET is used as a switching element to effectively control high current loads. Its **80A** high current capacity makes it particularly suitable for motor control applications that require high current drive, and can provide efficient and stable motor control performance.

3. **Power Inverter**
**SUP57N20-33-VB** can be used in **power inverter**, especially in **solar inverter** and **wind power inverter**. Due to its **200V** voltage capacity and **80A** current capability, it can ensure high-efficiency output in **DC-AC conversion**, minimize losses, improve conversion efficiency, and have low **switching losses** and **conduction losses**.

4. **Battery Management System (BMS)**
**SUP57N20-33-VB** is suitable for **battery management system (BMS)**, especially in **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**. It can provide **high-efficiency current switching control** to optimize the battery charging and discharging process, protect the battery pack from overcurrent or overvoltage, and ensure the battery life and reliability.

5. **High-power conversion applications**
In applications that require **high-power conversion** and **power regulation**, **SUP57N20-33-VB** is an ideal choice. It can be used in **high-power DC-DC converters**, **power supply systems**, and **uninterruptible power supplies (UPS)**. In these systems, it can stably handle large currents while maintaining low heat loss and improving overall efficiency.

6. **High-power switch modules**
This type of MOSFET is suitable for **high-power switch modules**, such as switch regulation and control for high-power loads. Due to its **low on-resistance (R_DS(ON) = 17mΩ)** and **high current capacity**, it can provide extremely high efficiency in high-power environments that require frequent switching, and is suitable for **grid load management, power conversion modules** and other applications.

7. **Industrial Automation Equipment**
**SUP57N20-33-VB** MOSFET can be widely used in **industrial automation equipment**, especially in **high-efficiency power supply** and **industrial robot control**. Due to its high current handling capability (80A) and stable voltage characteristics, it can meet the needs of power and control systems in industrial environments.

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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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