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SUM90N10-8M2P-GE3-VB Product details
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**SUM90N10-8M2P-GE3-VB Product Introduction**
**SUM90N10-8M2P-GE3-VB** is a **high-performance single N-channel MOSFET** in a **TO263 package**, suitable for power electronics applications that require **high current, high power** transmission. This MOSFET has a **maximum drain-source voltage (VDS) of **100V** and a **maximum drain current (ID) of **140A**. It uses **Trench technology** to provide **ultra-low on-resistance** (**RDS(ON) = 4mΩ @ VGS = 10V**), significantly improving power conversion efficiency and thermal management performance. Due to its excellent performance, it is widely used in **high-power power management, industrial automation, motor drive, charging system** and other fields, which can effectively improve system efficiency and reduce energy loss.
**SUM90N10-8M2P-GE3-VB** is a **high-performance single N-channel MOSFET** in a **TO263 package**, suitable for power electronics applications that require **high current, high power** transmission. This MOSFET has a **maximum drain-source voltage (VDS) of **100V** and a **maximum drain current (ID) of **140A**. It uses **Trench technology** to provide **ultra-low on-resistance** (**RDS(ON) = 4mΩ @ VGS = 10V**), significantly improving power conversion efficiency and thermal management performance. Due to its excellent performance, it is widely used in **high-power power management, industrial automation, motor drive, charging system** and other fields, which can effectively improve system efficiency and reduce energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**SUM90N10-8M2P-GE3-VB Detailed parameter description**
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **4mΩ @ VGS = 10V**
- **Maximum drain current (ID)**: 140A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss**: Support high power applications
- **Switching speed**: Suitable for high frequency switching circuits
- **Thermal resistance (RthJC)**: Low thermal resistance design, supporting efficient heat dissipation
- **Application Areas**: Suitable for high-efficiency power management systems, motor drives and high-power switching applications
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **4mΩ @ VGS = 10V**
- **Maximum drain current (ID)**: 140A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss**: Support high power applications
- **Switching speed**: Suitable for high frequency switching circuits
- **Thermal resistance (RthJC)**: Low thermal resistance design, supporting efficient heat dissipation
- **Application Areas**: Suitable for high-efficiency power management systems, motor drives and high-power switching applications
Domain and module applications：
**Application fields and module examples**
1. **Power Management Systems**
**SUM90N10-8M2P-GE3-VB** Due to its low on-resistance (RDS(ON)), it can greatly improve the conversion efficiency of **DC-DC converters** and **AC-DC adapters**, reduce power loss, and is suitable for **high-efficiency power modules**. It can work stably under high current loads, especially suitable for **high-power power supply** and **battery management system (BMS)**. In addition, this MOSFET can also be used in **power factor correction (PFC)** circuits to improve the overall efficiency of the system.
2. **Industrial Automation & Motor Drive Systems**
**SUM90N10-8M2P-GE3-VB** is suitable for **industrial motor drives**, especially **high-power motor control systems**. Due to its ultra-low on-resistance and high current carrying capacity, it can provide efficient power control in **motor controllers**, **servo drive systems** and **stepper motor drives**, reduce power losses and improve system efficiency. In **robotics** and **automation equipment**, this MOSFET can ensure stable and efficient operation of motors.
3. **Electric Vehicles & Charging Systems**
In **electric vehicles (EV)** and their **battery charging systems**, **SUM90N10-8M2P-GE3-VB** is widely used in battery management systems (BMS) and electric vehicle charging piles. Due to its **140A** high current carrying capacity, it can efficiently regulate charging current and battery voltage, optimize the charging process, and ensure the stability and efficiency of the charging system. The low on-resistance of the MOSFET also helps to reduce heat generation during the charging process, improving the safety and reliability of the system.
4. **High Power Switching Applications**
**SUM90N10-8M2P-GE3-VB** is suitable for various **high power switching circuits**, such as **DC-AC inverters**, **power transmission equipment** and **uninterruptible power supplies (UPS)**. It can maintain low power consumption under high current loads and has low heat loss, making it an ideal choice for power conversion systems. Especially in **fast charging systems** and **high-frequency switching applications**, it provides efficient switching performance and stable current control.
5. **High Frequency Power Conversion Equipment**
Due to its excellent **switching performance** and low on-resistance, **SUM90N10-8M2P-GE3-VB** is also very suitable for **high frequency power conversion equipment**, such as **RF power amplifiers** and **high frequency converters**. It can reduce switching losses during frequent switching and improve the efficiency of the overall system. It is particularly suitable for power conversion equipment that requires fast switching and high efficiency.
6. **Power Distribution & Transmission Systems**
This MOSFET can also be used in **power distribution systems** and **power transmission systems** to help improve **power transmission efficiency** and reduce energy loss. In **high voltage power conversion** and **long distance power transmission**, its excellent switching characteristics and thermal management capabilities are used to reduce power loss and improve the overall performance of the system.
1. **Power Management Systems**
**SUM90N10-8M2P-GE3-VB** Due to its low on-resistance (RDS(ON)), it can greatly improve the conversion efficiency of **DC-DC converters** and **AC-DC adapters**, reduce power loss, and is suitable for **high-efficiency power modules**. It can work stably under high current loads, especially suitable for **high-power power supply** and **battery management system (BMS)**. In addition, this MOSFET can also be used in **power factor correction (PFC)** circuits to improve the overall efficiency of the system.
2. **Industrial Automation & Motor Drive Systems**
**SUM90N10-8M2P-GE3-VB** is suitable for **industrial motor drives**, especially **high-power motor control systems**. Due to its ultra-low on-resistance and high current carrying capacity, it can provide efficient power control in **motor controllers**, **servo drive systems** and **stepper motor drives**, reduce power losses and improve system efficiency. In **robotics** and **automation equipment**, this MOSFET can ensure stable and efficient operation of motors.
3. **Electric Vehicles & Charging Systems**
In **electric vehicles (EV)** and their **battery charging systems**, **SUM90N10-8M2P-GE3-VB** is widely used in battery management systems (BMS) and electric vehicle charging piles. Due to its **140A** high current carrying capacity, it can efficiently regulate charging current and battery voltage, optimize the charging process, and ensure the stability and efficiency of the charging system. The low on-resistance of the MOSFET also helps to reduce heat generation during the charging process, improving the safety and reliability of the system.
4. **High Power Switching Applications**
**SUM90N10-8M2P-GE3-VB** is suitable for various **high power switching circuits**, such as **DC-AC inverters**, **power transmission equipment** and **uninterruptible power supplies (UPS)**. It can maintain low power consumption under high current loads and has low heat loss, making it an ideal choice for power conversion systems. Especially in **fast charging systems** and **high-frequency switching applications**, it provides efficient switching performance and stable current control.
5. **High Frequency Power Conversion Equipment**
Due to its excellent **switching performance** and low on-resistance, **SUM90N10-8M2P-GE3-VB** is also very suitable for **high frequency power conversion equipment**, such as **RF power amplifiers** and **high frequency converters**. It can reduce switching losses during frequent switching and improve the efficiency of the overall system. It is particularly suitable for power conversion equipment that requires fast switching and high efficiency.
6. **Power Distribution & Transmission Systems**
This MOSFET can also be used in **power distribution systems** and **power transmission systems** to help improve **power transmission efficiency** and reduce energy loss. In **high voltage power conversion** and **long distance power transmission**, its excellent switching characteristics and thermal management capabilities are used to reduce power loss and improve the overall performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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