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SUM90N06-4M4P-E3-VB Product details
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**SUM90N06-4M4P-E3-VB MOSFET Product Introduction**
**SUM90N06-4M4P-E3-VB** is a high-performance **single N-channel MOSFET**, using **TO263** package, designed for high current, high power switching applications. This model has a **maximum drain-source voltage (V_DS)** of **60V**, and a **maximum drain current (I_D)** of **150A**, enabling it to work stably in multiple high-efficiency power systems. Its **gate threshold voltage (V_th)** is **3V**, which means it can effectively conduct at a lower gate voltage.
**SUM90N06-4M4P-E3-VB** MOSFET uses advanced **Trench technology**, with an extremely low **on-resistance (R_DS(ON))**, which is **4mΩ** at **V_GS = 10V**. This low on-resistance results in extremely low power loss in the on-state, which improves efficiency and reduces heat buildup, making it suitable for applications requiring high performance and low power consumption, such as power management, motor drives, and industrial control systems.
The high current carrying capacity and low on-resistance of this MOSFET make it particularly suitable for use in environments that require high-frequency, high-efficiency power conversion, making it an ideal choice for applications such as power modules, inverters, electric vehicles, and industrial power drives.
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**SUM90N06-4M4P-E3-VB** is a high-performance **single N-channel MOSFET**, using **TO263** package, designed for high current, high power switching applications. This model has a **maximum drain-source voltage (V_DS)** of **60V**, and a **maximum drain current (I_D)** of **150A**, enabling it to work stably in multiple high-efficiency power systems. Its **gate threshold voltage (V_th)** is **3V**, which means it can effectively conduct at a lower gate voltage.
**SUM90N06-4M4P-E3-VB** MOSFET uses advanced **Trench technology**, with an extremely low **on-resistance (R_DS(ON))**, which is **4mΩ** at **V_GS = 10V**. This low on-resistance results in extremely low power loss in the on-state, which improves efficiency and reduces heat buildup, making it suitable for applications requiring high performance and low power consumption, such as power management, motor drives, and industrial control systems.
The high current carrying capacity and low on-resistance of this MOSFET make it particularly suitable for use in environments that require high-frequency, high-efficiency power conversion, making it an ideal choice for applications such as power modules, inverters, electric vehicles, and industrial power drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**SUM90N06-4M4P-E3-VB MOSFET Detailed Parameters**
- **Model**: SUM90N06-4M4P-E3-VB
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: 60V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: 3V
- **On-Resistance (R_DS(ON))**:
- 4mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: 150A
- **Technology**: Trench technology
- **Maximum Power Dissipation**: 300W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (C_gs)**: 4000pF (@ V_DS = 60V, V_GS = 0V)
- **Total gate charge (Qg)**: 170nC (@ V_DS = 60V, V_GS = 10V)
- **Reverse recovery time (T_rr)**: 80ns (typ.)
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- **Model**: SUM90N06-4M4P-E3-VB
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: 60V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: 3V
- **On-Resistance (R_DS(ON))**:
- 4mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: 150A
- **Technology**: Trench technology
- **Maximum Power Dissipation**: 300W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (C_gs)**: 4000pF (@ V_DS = 60V, V_GS = 0V)
- **Total gate charge (Qg)**: 170nC (@ V_DS = 60V, V_GS = 10V)
- **Reverse recovery time (T_rr)**: 80ns (typ.)
---
Domain and module applications：
**Application areas and module examples of SUM90N06-4M4P-E3-VB MOSFET**
1. **Power management and DC-DC converter**
**SUM90N06-4M4P-E3-VB** is an ideal choice for **DC-DC converter** and **power management modules**. Due to its low on-resistance and high current handling capability, it can efficiently convert voltages, reduce energy losses and heat accumulation. In efficient power management, it excels especially in power adapters and battery management systems (BMS) that require stable output and work under high loads.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
In **Electric Vehicles (EV)** and **Battery Management Systems (BMS)**, **SUM90N06-4M4P-E3-VB** can be used to efficiently control the charging and discharging process of the battery. Due to its strong current handling capability, it can support fast charging and discharging processes, thereby improving the efficiency and life of the battery system. Low on-resistance ensures low energy loss in the battery management system at high current.
3. **Industrial power drive system**
In industrial automation and **motor drive** systems, **SUM90N06-4M4P-E3-VB** MOSFET, as an efficient switching element, can provide stable current and power in industrial **variable frequency drives (VFD)** and power drive systems. It can effectively control the speed and torque of the motor to ensure the efficiency and stability of the equipment operation.
4. **High-frequency switching power supply (SMPS)**
In high-frequency **switching power supply (SMPS)**, **SUM90N06-4M4P-E3-VB** MOSFET can effectively perform power conversion and is suitable for various power modules, reducing losses in the power conversion process and improving overall efficiency. Its high switching speed and low on-resistance give it significant advantages in these applications, especially in high-power, high-frequency power applications.
5. **Solar Inverters and Renewable Energy Systems**
In **solar inverters** and other **renewable energy systems**, **SUM90N06-4M4P-E3-VB** is an ideal switching element that can effectively convert DC power into AC power and improve the overall efficiency of the system. Due to its low on-resistance and high current carrying capacity, it is suitable for power conversion applications that require high efficiency and high reliability to ensure maximum energy use.
6. **Telecommunication Power Systems**
**SUM90N06-4M4P-E3-VB** MOSFET is also widely used in **telecommunication power systems**, especially in **wireless base station power supplies** and **data center power modules**. Its high current capability and low power loss enable it to provide stable power support for communication equipment while reducing energy consumption and heat accumulation.
7. **LED lighting driver**
In **LED lighting driver systems**, **SUM90N06-4M4P-E3-VB** can be used to efficiently control current flow and ensure stable operation of LED lamps. Low on-resistance enables lighting systems to convert electrical energy more efficiently, extending LED life and reducing energy waste.
8. **Power factor correction (PFC) circuit**
In **Power factor correction (PFC)** circuits, **SUM90N06-4M4P-E3-VB** can be used as an efficient switching element to help improve the power factor and reduce power loss. Its low on-resistance and high current capability, especially in high-power power supplies, can effectively reduce energy losses and improve overall system performance.
1. **Power management and DC-DC converter**
**SUM90N06-4M4P-E3-VB** is an ideal choice for **DC-DC converter** and **power management modules**. Due to its low on-resistance and high current handling capability, it can efficiently convert voltages, reduce energy losses and heat accumulation. In efficient power management, it excels especially in power adapters and battery management systems (BMS) that require stable output and work under high loads.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
In **Electric Vehicles (EV)** and **Battery Management Systems (BMS)**, **SUM90N06-4M4P-E3-VB** can be used to efficiently control the charging and discharging process of the battery. Due to its strong current handling capability, it can support fast charging and discharging processes, thereby improving the efficiency and life of the battery system. Low on-resistance ensures low energy loss in the battery management system at high current.
3. **Industrial power drive system**
In industrial automation and **motor drive** systems, **SUM90N06-4M4P-E3-VB** MOSFET, as an efficient switching element, can provide stable current and power in industrial **variable frequency drives (VFD)** and power drive systems. It can effectively control the speed and torque of the motor to ensure the efficiency and stability of the equipment operation.
4. **High-frequency switching power supply (SMPS)**
In high-frequency **switching power supply (SMPS)**, **SUM90N06-4M4P-E3-VB** MOSFET can effectively perform power conversion and is suitable for various power modules, reducing losses in the power conversion process and improving overall efficiency. Its high switching speed and low on-resistance give it significant advantages in these applications, especially in high-power, high-frequency power applications.
5. **Solar Inverters and Renewable Energy Systems**
In **solar inverters** and other **renewable energy systems**, **SUM90N06-4M4P-E3-VB** is an ideal switching element that can effectively convert DC power into AC power and improve the overall efficiency of the system. Due to its low on-resistance and high current carrying capacity, it is suitable for power conversion applications that require high efficiency and high reliability to ensure maximum energy use.
6. **Telecommunication Power Systems**
**SUM90N06-4M4P-E3-VB** MOSFET is also widely used in **telecommunication power systems**, especially in **wireless base station power supplies** and **data center power modules**. Its high current capability and low power loss enable it to provide stable power support for communication equipment while reducing energy consumption and heat accumulation.
7. **LED lighting driver**
In **LED lighting driver systems**, **SUM90N06-4M4P-E3-VB** can be used to efficiently control current flow and ensure stable operation of LED lamps. Low on-resistance enables lighting systems to convert electrical energy more efficiently, extending LED life and reducing energy waste.
8. **Power factor correction (PFC) circuit**
In **Power factor correction (PFC)** circuits, **SUM90N06-4M4P-E3-VB** can be used as an efficient switching element to help improve the power factor and reduce power loss. Its low on-resistance and high current capability, especially in high-power power supplies, can effectively reduce energy losses and improve overall system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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