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SUM60N02-3M9P-E3-VB Product details

Product introduction:

**SUM60N02-3M9P-E3-VB MOSFET Product Introduction**

**SUM60N02-3M9P-E3-VB** is a high-performance unipolar N-type MOSFET in TO263 package with a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 98A. This MOSFET adopts Trench technology and has an ultra-low on-resistance (RDS(ON) is 2.7mΩ@VGS=4.5V), which can provide high current output at a lower gate-source voltage, suitable for high-efficiency power management and power conversion applications. Its low RDS(ON) performance enables it to significantly reduce power losses and is widely used in various electronic devices and modules that require efficient current switching. SUM60N02-3M9P-E3-VB is a reliable and efficient power MOSFET, especially suitable for application scenarios requiring high current, high efficiency and fast switching performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
**Detailed parameter description**

- **Model**: SUM60N02-3M9P-E3-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench technology

Domain and module applications:

**Product Application Fields and Module Examples**

1. **DC-DC Converter**:
**SUM60N02-3M9P-E3-VB** has a wide range of applications in DC-DC converters, especially in high-power and high-efficiency power conversion. Due to its low on-resistance and high current carrying capacity, it can effectively reduce energy loss and improve system efficiency. This MOSFET is very suitable for providing efficient power supply for complex electronic systems, especially in power management and battery-powered systems.

2. **Electric Vehicle (EV) Battery Management System (BMS)**:
In the battery management system of electric vehicles, **SUM60N02-3M9P-E3-VB** can be used for battery charging and discharging control. The low RDS(ON) and high current capability of this MOSFET enable it to efficiently control the current flow of the battery pack and ensure the efficiency and safety of battery charging and discharging. The high efficiency of this MOSFET can improve the endurance of electric vehicles and the reliability of battery management systems.

3. **Power Switching and Load Control**:
This MOSFET is suitable for power switching and load control in industrial equipment. Its high current capability and low on-resistance make it have low power loss when switching current, suitable as the main switching component in high-power equipment, especially in high-power motors, heating systems or current regulation systems, to ensure stable operation of the system.

4. **Solar Inverter**:
**SUM60N02-3M9P-E3-VB** is suitable for use in solar panel inverters, which can convert DC power into AC power. Solar inverters require MOSFETs that can withstand higher voltages and provide efficient switching performance during the conversion process. The low on-resistance of this MOSFET enables efficient power conversion in solar inverters, reducing energy losses and improving overall efficiency.

5. **UPS (Uninterruptible Power Supply) System**:
In UPS systems, **SUM60N02-3M9P-E3-VB** can be used for power switching and regulation. In the event of power outages or unstable power, UPS systems need to be able to quickly switch to backup power to ensure continuous operation of equipment. Due to its efficient current switching characteristics, this MOSFET can respond quickly and reduce energy losses during power conversion, thereby improving the efficiency and reliability of UPS systems.

6. **Automotive Electronic Control Unit (ECU)**:
In automotive electronic control units, especially in battery-powered and motor control systems, **SUM60N02-3M9P-E3-VB** can be used as a power switch to regulate voltage and current. Low on-resistance enables this MOSFET to work stably in complex electronic control systems, reduce power consumption, and improve system response speed. It can be seen in systems such as automotive electronic control, on-board power management, and electric seats and windows.

7. **LED Driver**:
Due to its excellent switching characteristics and low losses, **SUM60N02-3M9P-E3-VB** is widely used in LED driver power supplies. The driver power supply of LED lamps needs to provide current efficiently and be able to operate stably to extend the life of the LED. When driving high-power LEDs, this MOSFET can effectively reduce energy loss, improve overall system efficiency, and prevent LED damage due to unstable current.

8. **Smart Grid and Energy Storage System**:
In smart grid and energy storage systems, **SUM60N02-3M9P-E3-VB** can be used for power conversion, regulation and management of energy storage devices. Due to its ability to withstand high currents and efficient switching characteristics, this MOSFET can help these systems achieve more efficient power management, especially in energy storage systems, it can effectively manage and regulate the flow of power from batteries to the grid.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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