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SUM55N03-16P-VB Product details
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**SUM55N03-16P-VB MOSFET Product Introduction**
**SUM55N03-16P-VB** is a **single N-channel MOSFET**, packaged in **TO263**, designed for high-efficiency power conversion and switching applications. This MOSFET has a **30V** maximum drain-source voltage (V_DS) and a **50A** maximum drain current (I_D), suitable for power electronic systems that require fast switching and low power loss. Its **gate threshold voltage (V_th)** is **1.7V**, which has a lower switching threshold and can perform switching operations at a lower gate voltage, suitable for low-voltage drive applications.
**SUM55N03-16P-VB** MOSFET has a very low on-resistance, **R_DS(ON)** is **12mΩ** at **V_GS = 10V** and **18mΩ** at **V_GS = 4.5V**, which enables it to provide excellent energy efficiency and reduce heat generation under high current loads. Using **Trench technology**, the device has lower energy loss and higher switching speed in high current switching operations, and is widely used in power management, DC-DC conversion, battery management and various high-efficiency power modules.
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**SUM55N03-16P-VB** is a **single N-channel MOSFET**, packaged in **TO263**, designed for high-efficiency power conversion and switching applications. This MOSFET has a **30V** maximum drain-source voltage (V_DS) and a **50A** maximum drain current (I_D), suitable for power electronic systems that require fast switching and low power loss. Its **gate threshold voltage (V_th)** is **1.7V**, which has a lower switching threshold and can perform switching operations at a lower gate voltage, suitable for low-voltage drive applications.
**SUM55N03-16P-VB** MOSFET has a very low on-resistance, **R_DS(ON)** is **12mΩ** at **V_GS = 10V** and **18mΩ** at **V_GS = 4.5V**, which enables it to provide excellent energy efficiency and reduce heat generation under high current loads. Using **Trench technology**, the device has lower energy loss and higher switching speed in high current switching operations, and is widely used in power management, DC-DC conversion, battery management and various high-efficiency power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**SUM55N03-16P-VB MOSFET detailed parameter description**
- **Model**: SUM55N03-16P-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 18mΩ (@ V_GS = 4.5V)
- 12mΩ (@ V_GS = 10V)
- **Maximum drain current (I_D)**: 50A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation**: up to 150W (depending on cooling conditions)
- **Input capacitance (C_gs)**: 3200pF (@ V_DS = 30V, V_GS = 0V)
- **Total gate charge (Qg)**: 90nC (@ V_DS = 30V, V_GS = 10V)
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- **Model**: SUM55N03-16P-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 18mΩ (@ V_GS = 4.5V)
- 12mΩ (@ V_GS = 10V)
- **Maximum drain current (I_D)**: 50A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation**: up to 150W (depending on cooling conditions)
- **Input capacitance (C_gs)**: 3200pF (@ V_DS = 30V, V_GS = 0V)
- **Total gate charge (Qg)**: 90nC (@ V_DS = 30V, V_GS = 10V)
---
Domain and module applications：
**Application fields and module examples of SUM55N03-16P-VB MOSFET**
1. **Power management system (DC-DC converter)**
In **DC-DC converter**, **SUM55N03-16P-VB** acts as a high-efficiency switching element to effectively convert voltage and improve energy efficiency. Especially in power adapters, battery chargers, and industrial power modules, this MOSFET provides high-efficiency power conversion by reducing on-resistance and power loss, ensuring stable and efficient operation of the power system.
2. **Battery management system (BMS)**
In **Battery management system**, **SUM55N03-16P-VB** MOSFET acts as a high-current switch controller to control the charging and discharging process of the battery. Its low on-resistance characteristic ensures that the power loss is minimized when the battery is charged and discharged, thereby effectively improving the efficiency and performance of the battery management system and extending the battery life. It is particularly suitable for power tools, electric vehicles, and energy storage systems.
3. **Electric Vehicle (EV) Charging System**
**SUM55N03-16P-VB** MOSFET is also widely used in **Electric Vehicle Charging System**. It can provide stable power switching function for the charger, ensure smooth control of current and voltage during charging, reduce heat loss, and due to its high current carrying capacity, it can effectively maintain low temperature operation during high power charging.
4. **Industrial Power Control System (Motor Drive, Automation Control)**
This MOSFET is widely used in **Motor Drive System** and **Industrial Automation Control**, especially in the drive of **Inverter**, **Power Tools** and **Electric Equipment**. Its low R_DS(ON) and high current capability enable it to carry large power loads, ensuring efficient operation of industrial equipment and low energy loss.
5. **LED drive system**
**SUM55N03-16P-VB** is suitable for **LED drive system**, which can provide stable current control for LED lamps, thereby ensuring efficient, stable and long-term operation of LED light sources. Due to its low power consumption and high efficiency, it is very suitable for high-power LED lighting equipment, display screens and other lighting applications.
6. **Inverter and UPS system**
In **inverter** and **uninterruptible power supply (UPS) system**, **SUM55N03-16P-VB** MOSFET provides efficient power switching to ensure minimal loss during the conversion from DC power to AC power, thereby improving the efficiency of the inverter. Its low R_DS(ON) characteristic reduces power loss under high current conditions, making it very suitable for applications in solar inverters, wind power generation and backup power.
7. **High-efficiency power tools**
**SUM55N03-16P-VB** As a low-loss, high-current handling MOSFET, it is suitable for the drive system of **high-efficiency power tools**. Whether it is an electric screwdriver, electric drill, or other high-power power tools, this MOSFET can ensure low energy loss and stable current control during equipment operation, extending the service life of the tool and improving work efficiency.
8. **Wireless communication equipment**
Due to its excellent high-frequency performance and low on-resistance, **SUM55N03-16P-VB** is also widely used in **wireless communication equipment**, especially base stations, RF amplifiers, and signal processing modules. This MOSFET can effectively operate under high-frequency and high-current conditions, thereby ensuring stable transmission and processing of signals.
With its low on-resistance, high current carrying capability and efficient switching performance, **SUM55N03-16P-VB** provides an ideal solution in multiple power electronics and switching applications. It is widely used in power management, LED lighting, electric vehicles, battery management systems and other high-efficiency power modules, meeting the needs of various applications from consumer electronics to industrial power systems.
1. **Power management system (DC-DC converter)**
In **DC-DC converter**, **SUM55N03-16P-VB** acts as a high-efficiency switching element to effectively convert voltage and improve energy efficiency. Especially in power adapters, battery chargers, and industrial power modules, this MOSFET provides high-efficiency power conversion by reducing on-resistance and power loss, ensuring stable and efficient operation of the power system.
2. **Battery management system (BMS)**
In **Battery management system**, **SUM55N03-16P-VB** MOSFET acts as a high-current switch controller to control the charging and discharging process of the battery. Its low on-resistance characteristic ensures that the power loss is minimized when the battery is charged and discharged, thereby effectively improving the efficiency and performance of the battery management system and extending the battery life. It is particularly suitable for power tools, electric vehicles, and energy storage systems.
3. **Electric Vehicle (EV) Charging System**
**SUM55N03-16P-VB** MOSFET is also widely used in **Electric Vehicle Charging System**. It can provide stable power switching function for the charger, ensure smooth control of current and voltage during charging, reduce heat loss, and due to its high current carrying capacity, it can effectively maintain low temperature operation during high power charging.
4. **Industrial Power Control System (Motor Drive, Automation Control)**
This MOSFET is widely used in **Motor Drive System** and **Industrial Automation Control**, especially in the drive of **Inverter**, **Power Tools** and **Electric Equipment**. Its low R_DS(ON) and high current capability enable it to carry large power loads, ensuring efficient operation of industrial equipment and low energy loss.
5. **LED drive system**
**SUM55N03-16P-VB** is suitable for **LED drive system**, which can provide stable current control for LED lamps, thereby ensuring efficient, stable and long-term operation of LED light sources. Due to its low power consumption and high efficiency, it is very suitable for high-power LED lighting equipment, display screens and other lighting applications.
6. **Inverter and UPS system**
In **inverter** and **uninterruptible power supply (UPS) system**, **SUM55N03-16P-VB** MOSFET provides efficient power switching to ensure minimal loss during the conversion from DC power to AC power, thereby improving the efficiency of the inverter. Its low R_DS(ON) characteristic reduces power loss under high current conditions, making it very suitable for applications in solar inverters, wind power generation and backup power.
7. **High-efficiency power tools**
**SUM55N03-16P-VB** As a low-loss, high-current handling MOSFET, it is suitable for the drive system of **high-efficiency power tools**. Whether it is an electric screwdriver, electric drill, or other high-power power tools, this MOSFET can ensure low energy loss and stable current control during equipment operation, extending the service life of the tool and improving work efficiency.
8. **Wireless communication equipment**
Due to its excellent high-frequency performance and low on-resistance, **SUM55N03-16P-VB** is also widely used in **wireless communication equipment**, especially base stations, RF amplifiers, and signal processing modules. This MOSFET can effectively operate under high-frequency and high-current conditions, thereby ensuring stable transmission and processing of signals.
With its low on-resistance, high current carrying capability and efficient switching performance, **SUM55N03-16P-VB** provides an ideal solution in multiple power electronics and switching applications. It is widely used in power management, LED lighting, electric vehicles, battery management systems and other high-efficiency power modules, meeting the needs of various applications from consumer electronics to industrial power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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