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SUM33N20-60P-E3-VB Product details

Product introduction:

1. Product Introduction

**SUM33N20-60P-E3-VB** is a high voltage, high current single N-channel MOSFET in TO263 package, suitable for 200V high voltage switching applications. The gate threshold voltage (Vth) of this MOSFET is 3V, the maximum drain-source voltage (VDS) is 200V, the maximum gate-source voltage (VGS) is ±20V, it has a low on-resistance (RDS(ON)) of 48mΩ @VGS=10V, and a maximum drain current (ID) of 40A. Using Trench technology, this MOSFET has good switching characteristics, low power loss and high current carrying capacity, and is suitable for applications requiring high efficiency, high current and high voltage, such as power management, high power switching, power tools, automotive electronics and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 200V 3V 40A 48mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 200V 3V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 200V 3V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description

- **Model**: SUM33N20-60P-E3-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **RDS(ON) @VGS=10V**: 48mΩ
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
- **Application areas**: High-efficiency power management, power tools, automotive electronics, industrial automation, power control modules, etc.

Domain and module applications:

3. Applications and modules

- **High-efficiency power management system**: SUM33N20-60P-E3-VB has excellent performance in power management systems such as DC-DC converters, power modules, and battery management systems (BMS). Due to its low on-resistance (RDS(ON)=48mΩ@VGS=10V) and high voltage carrying capacity (VDS=200V), this MOSFET is suitable for high-voltage and high-current power conversion applications. It can work efficiently under high load conditions, reduce power loss and optimize system efficiency, and is widely used in power management modules in server power supplies, solar inverters, power systems, and communication equipment.

- **Power tools and power equipment**: In high-power power equipment such as power tools, household power equipment, and electric vehicles, SUM33N20-60P-E3-VB provides stable and reliable switching performance. Its high drain current capability (40A) enables it to effectively drive motors or other high-power loads and ensure long-term and efficient operation of the system. At the same time, the low RDS(ON) characteristics of MOSFET help reduce switching losses, improve the energy efficiency of equipment, and extend service life.

- **Automotive Electronics and Electric Vehicles (EV)**: In electric vehicle (EV) and hybrid electric vehicle (HEV) systems, SUM33N20-60P-E3-VB MOSFET can be used in battery management systems (BMS), charging control, power conversion, and electric drive systems. Due to its high voltage carrying capacity and low on-resistance, MOSFET can effectively control the battery charging and discharging process while reducing power loss and improving efficiency. Especially in electric vehicle power systems, it can be used in motor control, DC-DC conversion, and battery management.

- **Industrial Automation and Motor Drive Control**: This MOSFET is widely used in industrial automation systems, especially in motor drives, robot control, and automation equipment. Its maximum drain current capability (40A) and high voltage characteristics enable it to stably drive high-power motors and loads, suitable for factory automation, robotic systems, elevator control systems, and other high-power automation equipment. The low on-resistance characteristics help reduce the energy loss of the system and improve system efficiency.

- **Load Switching and Power Control**: In high-power load switching and power control applications, the SUM33N20-60P-E3-VB is an ideal choice. Its high drain current and low on-resistance make it ideal for switching control of high-power loads, such as high-power load switching, load management, power distribution, and power control modules in battery-powered systems. The MOSFET is able to switch efficiently, ensuring the stability and reliability of the system under high-power loads.

- **High-power Battery Management System (BMS)**: In battery management systems, the SUM33N20-60P-E3-VB can be used for charging and discharging control of high-power batteries, especially in battery systems that require high voltage and high current management. Due to its low RDS(ON) and high current capability, the MOSFET can effectively regulate the battery charging and discharging process, reduce energy loss, improve system efficiency, and extend battery life.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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