SUM110P06-08L-E3-VB Product details
Product introduction:
**SUM110P06-08L-E3-VB** is a high-performance P-type MOSFET in TO263 package with a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 120A. This MOSFET uses advanced Trench technology and has a very low on-resistance (RDS(ON)) of 7mΩ (VGS=4.5V) and 5mΩ (VGS=10V), ensuring extremely low energy loss and high-efficiency performance. Its excellent conductivity enables it to operate efficiently and stably in high-power applications. SUM110P06-08L-E3-VB is particularly suitable for power management, industrial equipment, automotive electronics and other fields that require large current and high power processing, and can achieve precise switching control and efficient power conversion.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
- **Model**: SUM110P06-08L-E3-VB
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -120A
- **Technology**: Trench technology
Domain and module applications:
1. **High-efficiency power conversion system**:
**SUM110P06-08L-E3-VB** is widely used in power conversion systems due to its ultra-low on-resistance and high current carrying capacity, especially in power modules such as DC-DC converters, AC-DC adapters, and inverters. Its low power consumption characteristics can greatly improve the power conversion efficiency and reduce energy loss in the system. It is suitable for applications that require efficient power transmission and conversion, such as industrial power supplies, efficient battery management systems, etc.
2. **Electric vehicles and electric drive systems**:
In electric vehicles (EVs) and electric drive systems, **SUM110P06-08L-E3-VB** is an ideal choice. The low on-resistance and high current capability of P-type MOSFETs give them excellent performance in battery management and power conversion in electric vehicles. MOSFETs can efficiently control current flow and reduce power loss, and are particularly suitable for battery packs, charging modules, and drive control systems in electric vehicles.
3. **Industrial Power and Power Management**:
In industrial power and power management modules, the excellent performance of **SUM110P06-08L-E3-VB** makes it a key component that can meet the needs of high current and high power, especially in applications such as power switching and load control. The high current carrying capacity and low loss characteristics of MOSFET enable it to operate efficiently in high-frequency and high-power applications, ensuring the stability and efficiency of industrial power systems.
4. **Renewable Energy Systems (such as Solar Inverters)**:
In renewable energy systems such as solar inverters, **SUM110P06-08L-E3-VB** can efficiently convert and manage large currents, suitable for DC to AC power conversion. The MOSFET can switch quickly and provide low losses, thereby maximizing the conversion efficiency of solar power generation, reducing energy losses, and ensuring stable operation of the system. Especially in solar inverters, the low on-resistance of this MOSFET improves the efficiency of the overall system.
5. **Battery Management System and Charger**:
Due to the high current carrying capacity and low RDS(ON) value of **SUM110P06-08L-E3-VB**, it is also widely used in battery management systems (BMS) and battery chargers. MOSFET can accurately regulate the battery charging process, prevent overcurrent, overcharging, etc., and ensure the safety and stability of the battery. At the same time, due to its efficient current control, it can also extend the service life of the battery.
6. **High-frequency Power Switch and Load Switch**:
The high-frequency switching capability of this MOSFET makes it very suitable for high-speed power switching applications. In high-power load switching, load protection and power switching, **SUM110P06-08L-E3-VB** can provide fast response and ensure low-loss operation, which is particularly suitable for power systems that require high-frequency switching, such as LED driver power supplies, high-frequency inverters, etc.
7. **Uninterruptible Power Supply (UPS) System**:
In an uninterruptible power supply (UPS) system, **SUM110P06-08L-E3-VB** provides reliable current switching and load protection. Its high current handling capability and low on-resistance enable it to operate stably and effectively manage the charging and discharging process of the battery pack. MOSFET can ensure that the UPS system provides continuous power support to the load during power failures and improve the reliability of the system.
8. **Communication Equipment and Data Center Power Management**:
In systems that require stable power management, such as communication equipment, telecommunications base stations, and data centers, **SUM110P06-08L-E3-VB** is also an ideal choice. The high current handling capability and efficient switching characteristics of MOSFET enable it to quickly and accurately regulate current under high loads, ensuring stable power supply for these key equipment, especially when the load fluctuates greatly.
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