SUM110P04-05-E3-VB Product details
Product introduction:
**SUM110P04-05-E3-VB** is a **single P-channel MOSFET**, using **TO263** package, designed for efficient power management and switching applications. The device has a maximum drain-source voltage (V_DS) of **-40V** and a gate-source voltage (V_GS) of **±20V**, and a gate threshold voltage (V_th) of **-2.5V**. Its on-resistance is very low, **at V_GS=10V, R_DS(ON) is 4.1mΩ**, at **V_GS=4.5V, R_DS(ON) is 8.28mΩ**, enabling it to operate efficiently under high current loads. The maximum drain current (I_D) is **-110A**, suitable for high power, high current applications. Using **Trench technology**, it has the characteristics of low on-resistance and high efficiency, suitable for high-efficiency power conversion systems and power management equipment.
This MOSFET is widely used in scenarios requiring high efficiency, low power loss and high current carrying capacity, especially suitable for electric vehicles, battery management systems, power conversion equipment and other fields.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
- **Model**: SUM110P04-05-E3-VB
- **Package type**: TO263
- **Configuration**: Single P-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -40V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: -2.5V
- **On-resistance (R_DS(ON))**:
- 8.28mΩ (@ V_GS = 4.5V)
- 4.1mΩ (@ V_GS = 10V)
- **Maximum drain current (I_D)**: -110A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power consumption**: Up to 150W (depending on cooling conditions)
---
Domain and module applications:
1. **Electric Vehicles (EV) and Charging Systems**
In the battery management system (BMS) and charging system of electric vehicles, **SUM110P04-05-E3-VB** can be used as an important power switch device to control the charging and discharging process of the battery. Its low on-resistance and high current carrying capacity enable it to work efficiently under high power and high current conditions, ensuring that the battery can exchange power efficiently and safely during the charging process, and reduce power loss.
2. **Power Management System**
This MOSFET is very suitable for **DC-DC converters**, **AC-DC power adapters** and other power management modules. In these applications, SUM110P04-05-E3-VB can reduce power losses in the system and improve energy efficiency through its low on-resistance and efficient switching characteristics. Whether in industrial power supplies, communication equipment power supplies or consumer electronics, the SUM110P04-05-E3-VB provides reliable power conversion solutions.
3. **Industrial Power Control Systems**
**SUM110P04-05-E3-VB** is widely used in various industrial power control systems due to its high current capability and low on-resistance. It is suitable for use as a power switching component in motor drives, automation equipment control, power regulation and power tools. This MOSFET provides high-efficiency energy conversion and stable power regulation in industrial applications.
4. **Inverters and Power Conversion Systems**
In power conversion systems such as inverters, solar panel inverters, uninterruptible power supplies (UPS) and wind power inverters, high power currents and fast switching operations are often required. **SUM110P04-05-E3-VB**'s low R_DS(ON) characteristics enable it to provide extremely low energy losses in these high-efficiency, high-power power conversion systems while maintaining efficient and reliable operation.
5. **LED lighting drive system**
In LED drivers and lighting modules, the SUM110P04-05-E3-VB MOSFET can effectively control the switching of the power supply to ensure efficient current regulation and stable power supply. Its high current carrying capacity makes it very suitable for driving multiple LED modules, and it has the advantages of long life and low power consumption. It can be widely used in LED applications such as commercial lighting, street lighting, backlighting, etc.
6. **Radio and communication equipment**
In wireless communication systems, the SUM110P04-05-E3-VB can be used as a power switching device in radio frequency power amplifiers (RFPA) and radio frequency modulators to ensure efficient transmission of signals. Due to its low on-resistance, it can reduce power loss and heat generation, and is suitable for high-frequency and high-power transmission occasions, especially base stations, satellite communication equipment and wireless LAN equipment.
Through these applications, **SUM110P04-05-E3-VB MOSFET** plays a vital role in multiple high-current and high-efficiency power electronic systems, especially in the fields of electric vehicles, battery management, power conversion, LED driving and communication equipment, providing efficient and reliable solutions to meet the high-performance requirements of modern electronic technology for power switching devices.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image