SUM110N06-3M4L-E3-VB Product details
Product introduction:
SUM110N06-3M4L-E3-VB is a high-performance N-Channel MOSFET in a TO263 package, designed for power electronics applications with high current and low power loss. With a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of up to 210A, this MOSFET is ideal for systems that require high current carrying and low conduction losses. Its gate-source threshold voltage (Vth) is 3V, which means it can operate stably at a lower gate drive voltage. The on-resistance (RDS(ON)) is 3.2mΩ at VGS = 10V, showing a very low on-resistance, reducing energy loss and heat, and is suitable for high-efficiency power conversion and high-frequency switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package Type**: TO263
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 60V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 210A
- **Technology Type**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Power Loss**: Due to its low on-resistance, this MOSFET It can significantly reduce conduction losses and is suitable for high-efficiency and high-density power conversion applications.
- **Application areas**: high-efficiency power management, DC-DC converters, power tools, electric vehicle (EV) drive systems, load switches, server power supplies, etc.
Domain and module applications:
1. **Power management and high-efficiency power conversion**:
SUM110N06-3M4L-E3-VB is very suitable for high-efficiency power conversion in power management systems, especially in DC-DC converters and AC-DC power modules. Its high current capability (210A) and low on-resistance (3.2mΩ @ VGS = 10V) make it an ideal choice for high-efficiency power systems. This MOSFET can effectively reduce conduction losses and improve conversion efficiency, thereby extending the working life of the equipment and reducing heat dissipation requirements.
2. **Power tools and motor drives**:
In power tool and motor drive applications, SUM110N06-3M4L-E3-VB can provide powerful driving force through its high current capability (210A), which is suitable for various power tools, household appliances, electric vehicle drive systems, etc. Due to its low on-resistance, it can effectively improve energy efficiency, reduce power loss and temperature rise during motor operation, thereby improving equipment performance and reliability.
3. **Electric Vehicles (EV) and Battery Management Systems (BMS)**:
For electric vehicles (EV) and battery management systems (BMS), SUM110N06-3M4L-E3-VB provides excellent current carrying capacity and low conduction loss, making it very suitable for battery charge and discharge control, electric drive systems, and energy recovery systems. This MOSFET can ensure efficient operation of the system in high current and high power density applications, reduce energy loss, and extend battery life.
4. **High-frequency switching applications and load switching**:
In high-frequency switching applications, such as load switching and high-power load control, SUM110N06-3M4L-E3-VB can provide low switching loss and fast response, and is suitable for occasions requiring fast switching and low loss. Its low on-resistance makes it very low loss during high-frequency operation, thereby effectively improving the overall system efficiency.
5. **Server power and high-power power systems**:
In server power and high-power power systems, the high current capability and low on-resistance of the SUM110N06-3M4L-E3-VB make it an ideal choice. Server power supplies need to provide efficient and stable power to ensure reliable operation of data centers. The performance of this MOSFET can reduce the energy loss of the system, improve the conversion efficiency of the power supply, reduce heat generation, and ensure that the power supply can stably and reliably power a large number of devices.
Technical support:
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