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SUM110N04-2M1P-VB Product details
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**SUM110N04-2M1P-VB MOSFET Product Introduction**
**SUM110N04-2M1P-VB** is a **single N-channel MOSFET**, packaged in **TO263**, designed for high-efficiency power conversion and switching applications. The MOSFET has a **40V** maximum drain-source voltage (V_DS) and **±20V** gate-source voltage (V_GS), and has a **3V** gate threshold voltage (V_th). Its on-resistance is very low, **at V_GS=10V, R_DS(ON) is 2mΩ**, at **V_GS=4.5V, R_DS(ON) is 2.5mΩ**, enabling it to operate under high current loads without excessive power loss. The maximum drain current (I_D) can reach **150A**, suitable for applications requiring high current carrying and low loss. This MOSFET adopts **Trench technology**, which features low on-resistance and high switching speed, ensuring efficient power conversion and low-loss operation.
**SUM110N04-2M1P-VB** is suitable for a variety of high-performance power management, drive and power conversion applications, especially for efficient power modules and power amplifiers.
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**SUM110N04-2M1P-VB** is a **single N-channel MOSFET**, packaged in **TO263**, designed for high-efficiency power conversion and switching applications. The MOSFET has a **40V** maximum drain-source voltage (V_DS) and **±20V** gate-source voltage (V_GS), and has a **3V** gate threshold voltage (V_th). Its on-resistance is very low, **at V_GS=10V, R_DS(ON) is 2mΩ**, at **V_GS=4.5V, R_DS(ON) is 2.5mΩ**, enabling it to operate under high current loads without excessive power loss. The maximum drain current (I_D) can reach **150A**, suitable for applications requiring high current carrying and low loss. This MOSFET adopts **Trench technology**, which features low on-resistance and high switching speed, ensuring efficient power conversion and low-loss operation.
**SUM110N04-2M1P-VB** is suitable for a variety of high-performance power management, drive and power conversion applications, especially for efficient power modules and power amplifiers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**SUM110N04-2M1P-VB MOSFET detailed parameter description**
- **Model**: SUM110N04-2M1P-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 40V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 2.5mΩ (@ V_GS = 4.5V)
- 2mΩ (@ V_GS = 10V)
- **Maximum drain current (I_D)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power consumption**: up to 150W (depending on cooling conditions)
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- **Model**: SUM110N04-2M1P-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 40V
- **Gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 2.5mΩ (@ V_GS = 4.5V)
- 2mΩ (@ V_GS = 10V)
- **Maximum drain current (I_D)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power consumption**: up to 150W (depending on cooling conditions)
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Domain and module applications：
**Application fields and module examples of SUM110N04-2M1P-VB MOSFET**
1. **High-efficiency power management system**
SUM110N04-2M1P-VB has low on-resistance and high current carrying capacity, which is very suitable for use in high-efficiency DC-DC converters, AC-DC power adapters, and switching power supplies (SMPS). In these power conversion applications, SUM110N04-2M1P-VB can reduce power loss and improve system efficiency, so it is widely used in various high-efficiency power management modules, such as computer power supplies, communication power supplies, and other electronic equipment power modules.
2. **Electric Vehicles (EV) and Charging Systems**
In the battery charging system of electric vehicles (EVs), SUM110N04-2M1P-VB can be used in chargers, DC-DC conversion modules, and battery management systems (BMS). Its low on-resistance and high current capability enable it to efficiently manage the charging and discharging process of the battery, ensuring efficient charging and long-term stable operation of the battery. In addition, it can also improve the energy conversion efficiency of electric vehicle fast charging systems.
3. **Power Amplifiers and Inverters**
This MOSFET is widely used in solar inverters, power tool drive systems, and uninterruptible power supplies (UPS). Its high current carrying capacity and low loss characteristics enable it to effectively improve power conversion efficiency, reduce power losses, and improve the overall efficiency of the system in power amplifier and inverter circuits, especially in scenarios requiring high-frequency switching operations and high-power conversion.
4. **Industrial Power Control Systems**
SUM110N04-2M1P-VB is suitable for various industrial power control systems, especially applications that require stable and efficient power regulation. It can efficiently drive motors, control the switching of power equipment, and provide efficient power regulation and conversion. It is suitable for use in electric drive systems, robot control, automation equipment, and motor control systems.
5. **LED driver and lighting applications**
In LED lighting driver circuits, SUM110N04-2M1P-VB can be used as a power switch to drive LED modules with its low on-resistance and high current carrying capacity. Its low switching loss and high efficiency characteristics enable it to significantly improve the efficiency and stability of LED driver circuits, extend the service life of LED lamps, and reduce energy consumption.
6. **Communication and RF equipment**
This MOSFET is also suitable for high-frequency and radio frequency (RF) power amplifiers and power control in communication equipment. Its low on-resistance and fast switching characteristics enable it to effectively control the power transmission of RF signals, and is suitable for base stations, wireless communication equipment, satellite communication systems and other fields.
Through these applications, **SUM110N04-2M1P-VB MOSFET** can play an important role in multiple high-power and high-efficiency power electronic systems, providing efficient and reliable solutions for power management, electric drive, inverter, battery management, LED lighting and communication equipment.
1. **High-efficiency power management system**
SUM110N04-2M1P-VB has low on-resistance and high current carrying capacity, which is very suitable for use in high-efficiency DC-DC converters, AC-DC power adapters, and switching power supplies (SMPS). In these power conversion applications, SUM110N04-2M1P-VB can reduce power loss and improve system efficiency, so it is widely used in various high-efficiency power management modules, such as computer power supplies, communication power supplies, and other electronic equipment power modules.
2. **Electric Vehicles (EV) and Charging Systems**
In the battery charging system of electric vehicles (EVs), SUM110N04-2M1P-VB can be used in chargers, DC-DC conversion modules, and battery management systems (BMS). Its low on-resistance and high current capability enable it to efficiently manage the charging and discharging process of the battery, ensuring efficient charging and long-term stable operation of the battery. In addition, it can also improve the energy conversion efficiency of electric vehicle fast charging systems.
3. **Power Amplifiers and Inverters**
This MOSFET is widely used in solar inverters, power tool drive systems, and uninterruptible power supplies (UPS). Its high current carrying capacity and low loss characteristics enable it to effectively improve power conversion efficiency, reduce power losses, and improve the overall efficiency of the system in power amplifier and inverter circuits, especially in scenarios requiring high-frequency switching operations and high-power conversion.
4. **Industrial Power Control Systems**
SUM110N04-2M1P-VB is suitable for various industrial power control systems, especially applications that require stable and efficient power regulation. It can efficiently drive motors, control the switching of power equipment, and provide efficient power regulation and conversion. It is suitable for use in electric drive systems, robot control, automation equipment, and motor control systems.
5. **LED driver and lighting applications**
In LED lighting driver circuits, SUM110N04-2M1P-VB can be used as a power switch to drive LED modules with its low on-resistance and high current carrying capacity. Its low switching loss and high efficiency characteristics enable it to significantly improve the efficiency and stability of LED driver circuits, extend the service life of LED lamps, and reduce energy consumption.
6. **Communication and RF equipment**
This MOSFET is also suitable for high-frequency and radio frequency (RF) power amplifiers and power control in communication equipment. Its low on-resistance and fast switching characteristics enable it to effectively control the power transmission of RF signals, and is suitable for base stations, wireless communication equipment, satellite communication systems and other fields.
Through these applications, **SUM110N04-2M1P-VB MOSFET** can play an important role in multiple high-power and high-efficiency power electronic systems, providing efficient and reliable solutions for power management, electric drive, inverter, battery management, LED lighting and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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