中文
English
SUM110N03-04P-VB Product details
Back to previous pageProduct introduction：
**SUM110N03-04P-VB MOSFET Product Introduction**
**SUM110N03-04P-VB** is a **single N-channel MOSFET**, using **TO263** package, designed for high-power, high-efficiency power management and switching applications. The device has a **30V** drain-source voltage (V_DS) and can withstand **±20V** gate-source voltage (V_GS). Its gate threshold voltage (V_th) is **1.7V**, with very low on-resistance, **at 10V gate-source voltage, R_DS(ON) is 2.3mΩ**, at **4.5V gate-source voltage, R_DS(ON) is 3.2mΩ**, with excellent switching performance and current carrying capacity. The maximum drain current (I_D) is **150A**, capable of handling high current loads. This MOSFET uses **Trench technology**, which makes it have low on-resistance and high efficiency, and is suitable for a variety of high-performance power conversion applications.
Its low on-resistance and high current handling capability make SUM110N03-04P-VB widely used in many fields, especially in high-efficiency power management and power conversion systems.
---
**SUM110N03-04P-VB** is a **single N-channel MOSFET**, using **TO263** package, designed for high-power, high-efficiency power management and switching applications. The device has a **30V** drain-source voltage (V_DS) and can withstand **±20V** gate-source voltage (V_GS). Its gate threshold voltage (V_th) is **1.7V**, with very low on-resistance, **at 10V gate-source voltage, R_DS(ON) is 2.3mΩ**, at **4.5V gate-source voltage, R_DS(ON) is 3.2mΩ**, with excellent switching performance and current carrying capacity. The maximum drain current (I_D) is **150A**, capable of handling high current loads. This MOSFET uses **Trench technology**, which makes it have low on-resistance and high efficiency, and is suitable for a variety of high-performance power conversion applications.
Its low on-resistance and high current handling capability make SUM110N03-04P-VB widely used in many fields, especially in high-efficiency power management and power conversion systems.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**SUM110N03-04P-VB MOSFET Detailed Parameters**
- **Model**: SUM110N03-04P-VB
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: 30V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: 1.7V
- **On-Resistance (R_DS(ON))**:
- 3.2mΩ (@ V_GS = 4.5V)
- 2.3mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power consumption**: Up to 150W (depending on cooling conditions)
---
- **Model**: SUM110N03-04P-VB
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: 30V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: 1.7V
- **On-Resistance (R_DS(ON))**:
- 3.2mΩ (@ V_GS = 4.5V)
- 2.3mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power consumption**: Up to 150W (depending on cooling conditions)
---
Domain and module applications：
**Application areas and module examples of SUM110N03-04P-VB MOSFET**
1. **Power management system**
In power management applications, the low on-resistance and high current handling capability of the SUM110N03-04P-VB make it ideal for use in DC-DC converters, switch mode power supplies (SMPS), and power adapters. Its efficient power conversion capability can reduce system heat generation and improve energy efficiency, so it is widely used in high-efficiency power supplies and voltage conversion modules.
2. **Electric vehicle (EV) charging system**
The charging system of electric vehicles requires efficient power conversion and control devices, especially with high requirements on charging speed and power conversion efficiency. The low on-resistance and high current carrying capacity of the SUM110N03-04P-VB make it an ideal choice for electric vehicle charging stations and on-board chargers, ensuring low energy loss and efficient conversion during battery charging.
3. **High-power drive system**
SUM110N03-04P-VB can be widely used in electric drive systems, especially in situations where fast and efficient switching is required, such as power tools, electric vehicles, drones, etc. Its high current carrying capacity and low on-resistance enable it to provide efficient power transmission in high-power drive systems, ensuring long-term stable operation of the equipment.
4. **Battery Management System (BMS)**
In the battery management system (BMS), SUM110N03-04P-VB can efficiently control the charging and discharging process of the battery. The fast switching characteristics and high current carrying capacity of this MOSFET ensure that the battery can operate efficiently and safely during the charging and discharging process, which is particularly suitable for electric vehicles, battery energy storage systems and other renewable energy systems.
5. **Inverter and power conversion system**
SUM110N03-04P-VB is suitable for various inverter systems, such as solar inverters, UPS power supplies, and wind power inverters. Its low on-resistance and high switching efficiency enable it to significantly improve the conversion efficiency and reliability of the system and reduce energy loss when working in these power conversion devices, especially in high-frequency switching power supplies.
6. **Communication equipment and power amplifiers**
In communication equipment, SUM110N03-04P-VB can be used in power switches of high-power amplifiers and RF modules. Due to its excellent switching characteristics and low loss, it can provide precise power control and is widely used in wireless communication equipment, base stations, and other radio frequency (RF) systems that require high-power switching.
Through these applications, SUM110N03-04P-VB MOSFET can play an important role in high-efficiency, high-power and low-loss power electronic systems, providing efficient and reliable solutions for power management, electric drive, inverters, battery management systems and other fields.
1. **Power management system**
In power management applications, the low on-resistance and high current handling capability of the SUM110N03-04P-VB make it ideal for use in DC-DC converters, switch mode power supplies (SMPS), and power adapters. Its efficient power conversion capability can reduce system heat generation and improve energy efficiency, so it is widely used in high-efficiency power supplies and voltage conversion modules.
2. **Electric vehicle (EV) charging system**
The charging system of electric vehicles requires efficient power conversion and control devices, especially with high requirements on charging speed and power conversion efficiency. The low on-resistance and high current carrying capacity of the SUM110N03-04P-VB make it an ideal choice for electric vehicle charging stations and on-board chargers, ensuring low energy loss and efficient conversion during battery charging.
3. **High-power drive system**
SUM110N03-04P-VB can be widely used in electric drive systems, especially in situations where fast and efficient switching is required, such as power tools, electric vehicles, drones, etc. Its high current carrying capacity and low on-resistance enable it to provide efficient power transmission in high-power drive systems, ensuring long-term stable operation of the equipment.
4. **Battery Management System (BMS)**
In the battery management system (BMS), SUM110N03-04P-VB can efficiently control the charging and discharging process of the battery. The fast switching characteristics and high current carrying capacity of this MOSFET ensure that the battery can operate efficiently and safely during the charging and discharging process, which is particularly suitable for electric vehicles, battery energy storage systems and other renewable energy systems.
5. **Inverter and power conversion system**
SUM110N03-04P-VB is suitable for various inverter systems, such as solar inverters, UPS power supplies, and wind power inverters. Its low on-resistance and high switching efficiency enable it to significantly improve the conversion efficiency and reliability of the system and reduce energy loss when working in these power conversion devices, especially in high-frequency switching power supplies.
6. **Communication equipment and power amplifiers**
In communication equipment, SUM110N03-04P-VB can be used in power switches of high-power amplifiers and RF modules. Due to its excellent switching characteristics and low loss, it can provide precise power control and is widely used in wireless communication equipment, base stations, and other radio frequency (RF) systems that require high-power switching.
Through these applications, SUM110N03-04P-VB MOSFET can play an important role in high-efficiency, high-power and low-loss power electronic systems, providing efficient and reliable solutions for power management, electric drive, inverters, battery management systems and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
