中文
English
SUD50P08-26-VB Product details
Back to previous pageProduct introduction：
**SUD50P08-26-VB MOSFET Product Introduction**
**SUD50P08-26-VB** is a **single tube P-channel MOSFET** in **TO252** package, with **-100V** drain-source voltage (V_DS) and **±20V** gate-source voltage (V_GS). The device has a gate threshold voltage (V_th) of **-2V**, good switching characteristics and low on-resistance, and can provide stable performance in a variety of high-efficiency power conversion applications. At **4.5V gate-source voltage, the on-resistance (R_DS(ON)) is 21mΩ**, at **10V gate-source voltage, R_DS(ON) is 17mΩ**, and the maximum drain current (I_D) can reach **-50A**. The use of **Trench technology** makes the device have low switching loss and high efficiency, suitable for high-power applications.
This MOSFET is suitable for various power conversion and power management systems, especially in power switches that require high efficiency and low loss.
---
**SUD50P08-26-VB** is a **single tube P-channel MOSFET** in **TO252** package, with **-100V** drain-source voltage (V_DS) and **±20V** gate-source voltage (V_GS). The device has a gate threshold voltage (V_th) of **-2V**, good switching characteristics and low on-resistance, and can provide stable performance in a variety of high-efficiency power conversion applications. At **4.5V gate-source voltage, the on-resistance (R_DS(ON)) is 21mΩ**, at **10V gate-source voltage, R_DS(ON) is 17mΩ**, and the maximum drain current (I_D) can reach **-50A**. The use of **Trench technology** makes the device have low switching loss and high efficiency, suitable for high-power applications.
This MOSFET is suitable for various power conversion and power management systems, especially in power switches that require high efficiency and low loss.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -50A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
**SUD50P08-26-VB MOSFET Detailed Parameter Description**
- **Model**: SUD50P08-26-VB
- **Package Type**: TO252
- **Configuration**: Single P-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: -100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: -2V
- **On-Resistance (R_DS(ON))**:
- 21mΩ (@ V_GS = 4.5V)
- 17mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: -50A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to 150°C
- **Maximum power consumption**: up to 150W (depending on cooling conditions)
---
- **Model**: SUD50P08-26-VB
- **Package Type**: TO252
- **Configuration**: Single P-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: -100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: -2V
- **On-Resistance (R_DS(ON))**:
- 21mΩ (@ V_GS = 4.5V)
- 17mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: -50A
- **Technology**: Trench technology
- **Operating Temperature Range**: -55°C to 150°C
- **Maximum power consumption**: up to 150W (depending on cooling conditions)
---
Domain and module applications：
**Application areas and module examples of SUD50P08-26-VB MOSFET**
1. **Power management system**
In power management applications, SUD50P08-26-VB has very low on-resistance and high current handling capability, making it an ideal choice for DC-DC converters, power adapters and voltage conversion modules. The MOSFET can provide low-loss power conversion in these applications, and ensure high efficiency and low heat generation, which is particularly suitable for use in high-efficiency power modules.
2. **Electric Vehicle (EV) Battery Management System (BMS)**
The battery management system (BMS) in electric vehicles requires efficient and reliable power switches to control the charging and discharging process. SUD50P08-26-VB can provide low on-resistance in battery charge and discharge control modules, ensuring efficient battery energy management, reducing energy loss and ensuring that the battery operates within a safe voltage and current range.
3. **Inverters and power conversion systems**
In solar inverters, UPS power supplies, and power conversion systems, the SUD50P08-26-VB can work as an efficient power switch. Due to its low on-resistance and high current handling capability, it can handle high power currents and ensure efficient system operation. It is particularly suitable for applications that require fast switching, such as DC/AC inverter modules in solar power generation systems.
4. **Electric drive systems**
This MOSFET is widely used in electric drive systems, especially in the control system of drive motors. The characteristics of P-channel MOSFET enable it to effectively control the flow of current when used in half-bridge circuits and full-bridge circuits, improve the switching efficiency and reliability of the system, and is widely used in power tools, robots, electric vehicles and other fields.
5. **High-efficiency switching power supply (SMPS)**
In the switching power supply (SMPS), the SUD50P08-26-VB can be used to improve the overall efficiency and stability of the power supply. Its low R_DS(ON) and high current carrying capacity make it very suitable for use in high-power, high-efficiency power conversion modules, such as industrial power supplies, LED drivers, consumer electronics power supplies, etc.
6. **Power amplifiers and RF modules**
Due to the good switching characteristics and high efficiency of this MOSFET, it is suitable for power control modules in RF amplifiers and communication equipment. In these applications, the SUD50P08-26-VB can provide precise power switching, reduce switching losses and ensure stable output performance.
Through these applications, the SUD50P08-26-VB MOSFET can play an important role in multiple high-power, high-efficiency, and low-loss power electronic systems, providing efficient and reliable solutions for applications in power management, electric vehicles, power conversion, drive systems, and other fields.
1. **Power management system**
In power management applications, SUD50P08-26-VB has very low on-resistance and high current handling capability, making it an ideal choice for DC-DC converters, power adapters and voltage conversion modules. The MOSFET can provide low-loss power conversion in these applications, and ensure high efficiency and low heat generation, which is particularly suitable for use in high-efficiency power modules.
2. **Electric Vehicle (EV) Battery Management System (BMS)**
The battery management system (BMS) in electric vehicles requires efficient and reliable power switches to control the charging and discharging process. SUD50P08-26-VB can provide low on-resistance in battery charge and discharge control modules, ensuring efficient battery energy management, reducing energy loss and ensuring that the battery operates within a safe voltage and current range.
3. **Inverters and power conversion systems**
In solar inverters, UPS power supplies, and power conversion systems, the SUD50P08-26-VB can work as an efficient power switch. Due to its low on-resistance and high current handling capability, it can handle high power currents and ensure efficient system operation. It is particularly suitable for applications that require fast switching, such as DC/AC inverter modules in solar power generation systems.
4. **Electric drive systems**
This MOSFET is widely used in electric drive systems, especially in the control system of drive motors. The characteristics of P-channel MOSFET enable it to effectively control the flow of current when used in half-bridge circuits and full-bridge circuits, improve the switching efficiency and reliability of the system, and is widely used in power tools, robots, electric vehicles and other fields.
5. **High-efficiency switching power supply (SMPS)**
In the switching power supply (SMPS), the SUD50P08-26-VB can be used to improve the overall efficiency and stability of the power supply. Its low R_DS(ON) and high current carrying capacity make it very suitable for use in high-power, high-efficiency power conversion modules, such as industrial power supplies, LED drivers, consumer electronics power supplies, etc.
6. **Power amplifiers and RF modules**
Due to the good switching characteristics and high efficiency of this MOSFET, it is suitable for power control modules in RF amplifiers and communication equipment. In these applications, the SUD50P08-26-VB can provide precise power switching, reduce switching losses and ensure stable output performance.
Through these applications, the SUD50P08-26-VB MOSFET can play an important role in multiple high-power, high-efficiency, and low-loss power electronic systems, providing efficient and reliable solutions for applications in power management, electric vehicles, power conversion, drive systems, and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
