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SUD50N10-18P-GE3-VB Product details
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**SUD50N10-18P-GE3-VB MOSFET Product Introduction**
**SUD50N10-18P-GE3-VB** is a **single tube N-channel MOSFET** in **TO252** package. This MOSFET has a **100V** drain-source voltage (V_DS) and can withstand **±20V** gate-source voltage (V_GS). Its gate threshold voltage (V_th) is **1.8V**, the on-resistance (R_DS(ON))** at **10V gate-source voltage is **18mΩ**, and the maximum drain current (I_D) is **45A**. This device uses **Trench technology**, which has low on-resistance and high current carrying capacity, suitable for high-efficiency and high-performance power electronics applications.
The characteristics of this MOSFET make it perform well in situations requiring high switching speed and low conduction loss, and it is an ideal choice for various power management systems and power converters.
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**SUD50N10-18P-GE3-VB** is a **single tube N-channel MOSFET** in **TO252** package. This MOSFET has a **100V** drain-source voltage (V_DS) and can withstand **±20V** gate-source voltage (V_GS). Its gate threshold voltage (V_th) is **1.8V**, the on-resistance (R_DS(ON))** at **10V gate-source voltage is **18mΩ**, and the maximum drain current (I_D) is **45A**. This device uses **Trench technology**, which has low on-resistance and high current carrying capacity, suitable for high-efficiency and high-performance power electronics applications.
The characteristics of this MOSFET make it perform well in situations requiring high switching speed and low conduction loss, and it is an ideal choice for various power management systems and power converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**SUD50N10-18P-GE3-VB MOSFET Detailed Parameters**
- **Model**: SUD50N10-18P-GE3-VB
- **Package Type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: 100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: 1.8V
- **On-Resistance (R_DS(ON))**: 18mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: 45A
- **Technology**: Trench Technology
- **Drain-Source Voltage (V_DS)**: 100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **On-Resistance (R_DS(ON))**: 18mΩ @ V_GS = 10V
- **Drain Current (I_D)**: 45A
- **Operating Temperature Range**: -55°C to 150°C
- **Maximum Power Dissipation**: Up to 150W (depending on cooling conditions)
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- **Model**: SUD50N10-18P-GE3-VB
- **Package Type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (V_DS)**: 100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Gate Threshold Voltage (V_th)**: 1.8V
- **On-Resistance (R_DS(ON))**: 18mΩ (@ V_GS = 10V)
- **Maximum Drain Current (I_D)**: 45A
- **Technology**: Trench Technology
- **Drain-Source Voltage (V_DS)**: 100V
- **Gate-Source Voltage (V_GS)**: ±20V
- **On-Resistance (R_DS(ON))**: 18mΩ @ V_GS = 10V
- **Drain Current (I_D)**: 45A
- **Operating Temperature Range**: -55°C to 150°C
- **Maximum Power Dissipation**: Up to 150W (depending on cooling conditions)
---
Domain and module applications：
**Application areas and module examples of SUD50N10-18P-GE3-VB MOSFET**
1. **Power management system**
In high-efficiency power management modules, the low on-resistance and high current handling capability of the SUD50N10-18P-GE3-VB make it an ideal choice for DC-DC converters and power adapters. For example, it can be used in the switching circuit of a DC power supply to improve energy efficiency and reduce heat generation. Due to its high current carrying capacity, it is suitable for high power conversion needs.
2. **Electric vehicle (EV) charging system**
This MOSFET is suitable for the charging system of electric vehicles and is used to achieve efficient power conversion during high-power charging. Due to its superior switching characteristics and low on-resistance, it can effectively reduce energy loss and improve charging efficiency, and is particularly suitable for power switches in electric vehicle battery management systems (BMS).
3. **Switching Power Supply (SMPS)**
In switching power supply designs, the SUD50N10-18P-GE3-VB is ideal for use as a switching element. Low R_DS(ON) and high current carrying capability enable it to operate in high-efficiency power modules, reducing energy losses and improving overall system efficiency. It is widely used in consumer electronics, communication equipment, and industrial power supplies.
4. **Battery Management System (BMS)**
The low on-resistance and fast switching capability of this MOSFET make it an ideal choice for battery management systems (BMS), especially in applications that require fast charging and discharging processes. It plays an important role in the charging and discharging process of the battery, ensuring that the battery operates within a safe voltage and current range and extending battery life.
5. **Inverter Module**
In solar inverters or other energy converters, the high power handling capability of the SUD50N10-18P-GE3-VB makes it suitable for efficient power conversion and regulation. Its excellent electrical characteristics ensure the stability and efficiency of the equipment under different load and voltage conditions, and it is widely used in photovoltaic systems and other renewable energy equipment.
Through the application of these fields, SUD50N10-18P-GE3-VB MOSFET can provide stable and efficient performance in multiple high-power, high-efficiency, low-loss systems, meeting the needs of modern power electronics technology for high-performance switching elements.
1. **Power management system**
In high-efficiency power management modules, the low on-resistance and high current handling capability of the SUD50N10-18P-GE3-VB make it an ideal choice for DC-DC converters and power adapters. For example, it can be used in the switching circuit of a DC power supply to improve energy efficiency and reduce heat generation. Due to its high current carrying capacity, it is suitable for high power conversion needs.
2. **Electric vehicle (EV) charging system**
This MOSFET is suitable for the charging system of electric vehicles and is used to achieve efficient power conversion during high-power charging. Due to its superior switching characteristics and low on-resistance, it can effectively reduce energy loss and improve charging efficiency, and is particularly suitable for power switches in electric vehicle battery management systems (BMS).
3. **Switching Power Supply (SMPS)**
In switching power supply designs, the SUD50N10-18P-GE3-VB is ideal for use as a switching element. Low R_DS(ON) and high current carrying capability enable it to operate in high-efficiency power modules, reducing energy losses and improving overall system efficiency. It is widely used in consumer electronics, communication equipment, and industrial power supplies.
4. **Battery Management System (BMS)**
The low on-resistance and fast switching capability of this MOSFET make it an ideal choice for battery management systems (BMS), especially in applications that require fast charging and discharging processes. It plays an important role in the charging and discharging process of the battery, ensuring that the battery operates within a safe voltage and current range and extending battery life.
5. **Inverter Module**
In solar inverters or other energy converters, the high power handling capability of the SUD50N10-18P-GE3-VB makes it suitable for efficient power conversion and regulation. Its excellent electrical characteristics ensure the stability and efficiency of the equipment under different load and voltage conditions, and it is widely used in photovoltaic systems and other renewable energy equipment.
Through the application of these fields, SUD50N10-18P-GE3-VB MOSFET can provide stable and efficient performance in multiple high-power, high-efficiency, low-loss systems, meeting the needs of modern power electronics technology for high-performance switching elements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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