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SUD50N06-08H-VB Product details
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Product Introduction
**SUD50N06-08H-VB** is a **single N-channel MOSFET** in **TO252** package. It adopts advanced **Trench technology**, has low **RDS(ON)** and high current carrying capacity, and is widely used in high-efficiency power management, electric drive and other power conversion fields. The **VDS** of this MOSFET is **60V**, **Vth** is **2.5V**, and has a maximum drain current of **58A**. Its **RDS(ON)** is **13mΩ** at **VGS = 4.5V** and **10mΩ** at **VGS = 10V**, ensuring extremely low conduction losses, suitable for various applications requiring high efficiency and high current handling.
**SUD50N06-08H-VB** is a **single N-channel MOSFET** in **TO252** package. It adopts advanced **Trench technology**, has low **RDS(ON)** and high current carrying capacity, and is widely used in high-efficiency power management, electric drive and other power conversion fields. The **VDS** of this MOSFET is **60V**, **Vth** is **2.5V**, and has a maximum drain current of **58A**. Its **RDS(ON)** is **13mΩ** at **VGS = 4.5V** and **10mΩ** at **VGS = 10V**, ensuring extremely low conduction losses, suitable for various applications requiring high efficiency and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **13mΩ** @ VGS = 4.5V
- **10mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Power dissipation**: Suitable for high-efficiency power supply design, reducing power loss
- **Operating temperature range**: Adapt to industrial ambient temperature requirements
- **Technology**: Trench technology, providing excellent switching performance and low on-resistance
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **13mΩ** @ VGS = 4.5V
- **10mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Power dissipation**: Suitable for high-efficiency power supply design, reducing power loss
- **Operating temperature range**: Adapt to industrial ambient temperature requirements
- **Technology**: Trench technology, providing excellent switching performance and low on-resistance
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**:
**SUD50N06-08H-VB** is very suitable for use in **DC-DC converter**, especially in application scenarios that require efficient power conversion and low energy loss. Its **VDS** is **60V** and its maximum **ID** is **58A**, which can carry large currents without causing significant power losses. Whether it is battery-powered equipment, industrial power systems, or automotive power modules, this MOSFET can ensure efficient operation of the system and reduce energy losses.
2. **Electric drive system**:
This MOSFET is also very suitable for **electric drive systems**, such as **power tools, electric bicycles, electric vehicles**, etc. These systems have strict requirements for high-power, high-current current control. **SUD50N06-08H-VB**'s low **RDS(ON)** enables it to reduce switching losses in the system and improve the overall efficiency of the system, ensuring that the electric drive system can operate efficiently and stably.
3. **Battery Management System (BMS)**:
**SUD50N06-08H-VB** is also suitable for **battery management systems**, especially in applications that require high current charging and discharging. The **low RDS(ON)** characteristics of MOSFET reduce the energy loss during battery charging and discharging, ensuring efficient operation of the system while extending battery life. It is widely used in **battery management systems**, **energy storage devices** and **smart battery chargers** for electric vehicles.
4. **Load switch applications**:
This MOSFET is also suitable for **load switch** applications, such as in **industrial control systems** or **home appliances**. **SUD50N06-08H-VB** provides fast switching capability and low on-resistance, which can maintain low loss and high efficiency in scenarios where current changes rapidly. It is especially suitable for switching control of large current loads to ensure stability and reliability during system operation.
5. **Power management and distribution system**:
In the **power management system**, **SUD50N06-08H-VB** can be used to achieve efficient current control and energy distribution. Its low on-resistance and high current carrying capacity enable it to provide excellent performance in scenarios such as **UPS systems**, **power converters** and **power distribution systems**, reducing power loss and improving overall energy efficiency.
6. **High-frequency switching power supply**:
This MOSFET is also suitable for **high-frequency switching power supplies**, such as **wireless charging devices, power modules for communication base stations, RF power systems**, etc. Due to its efficient switching characteristics and low losses, **SUD50N06-08H-VB** can operate stably at high frequencies, reduce heat accumulation, and improve system efficiency.
1. **DC-DC converter**:
**SUD50N06-08H-VB** is very suitable for use in **DC-DC converter**, especially in application scenarios that require efficient power conversion and low energy loss. Its **VDS** is **60V** and its maximum **ID** is **58A**, which can carry large currents without causing significant power losses. Whether it is battery-powered equipment, industrial power systems, or automotive power modules, this MOSFET can ensure efficient operation of the system and reduce energy losses.
2. **Electric drive system**:
This MOSFET is also very suitable for **electric drive systems**, such as **power tools, electric bicycles, electric vehicles**, etc. These systems have strict requirements for high-power, high-current current control. **SUD50N06-08H-VB**'s low **RDS(ON)** enables it to reduce switching losses in the system and improve the overall efficiency of the system, ensuring that the electric drive system can operate efficiently and stably.
3. **Battery Management System (BMS)**:
**SUD50N06-08H-VB** is also suitable for **battery management systems**, especially in applications that require high current charging and discharging. The **low RDS(ON)** characteristics of MOSFET reduce the energy loss during battery charging and discharging, ensuring efficient operation of the system while extending battery life. It is widely used in **battery management systems**, **energy storage devices** and **smart battery chargers** for electric vehicles.
4. **Load switch applications**:
This MOSFET is also suitable for **load switch** applications, such as in **industrial control systems** or **home appliances**. **SUD50N06-08H-VB** provides fast switching capability and low on-resistance, which can maintain low loss and high efficiency in scenarios where current changes rapidly. It is especially suitable for switching control of large current loads to ensure stability and reliability during system operation.
5. **Power management and distribution system**:
In the **power management system**, **SUD50N06-08H-VB** can be used to achieve efficient current control and energy distribution. Its low on-resistance and high current carrying capacity enable it to provide excellent performance in scenarios such as **UPS systems**, **power converters** and **power distribution systems**, reducing power loss and improving overall energy efficiency.
6. **High-frequency switching power supply**:
This MOSFET is also suitable for **high-frequency switching power supplies**, such as **wireless charging devices, power modules for communication base stations, RF power systems**, etc. Due to its efficient switching characteristics and low losses, **SUD50N06-08H-VB** can operate stably at high frequencies, reduce heat accumulation, and improve system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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