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SUD50N06-07L-GE3-VB Product details

Product introduction:

**SUD50N06-07L-GE3-VB Product Introduction**

SUD50N06-07L-GE3-VB is a high-performance N-Channel MOSFET in TO252 package, suitable for various power management and power regulation systems. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 58A, enabling it to handle higher currents and meet the needs of a variety of high-efficiency applications. The gate-source threshold voltage (Vth) is 2.5V, supporting lower drive voltages, and its low on-resistance (RDS(ON)) is 13mΩ @VGS=4.5V and 10mΩ @VGS=10V, respectively, which significantly reduces power losses and optimizes circuit efficiency. Using advanced Trench technology, the switching performance and conductivity of this MOSFET are excellent in high-current, high-frequency applications, and are widely used in motor drives, power conversion, inverters and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
**SUD50N06-07L-GE3-VB Detailed Parameters**

- **Package Type**: TO252
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 60V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 13mΩ @VGS = 4.5V
- 10mΩ @VGS = 10V
- **Maximum Drain Current (ID)**: 58A
- **Maximum Power Loss**: Suitable for high power and low power loss applications
- **Technology Type**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Application Areas**: Power management, motor drive, DC-DC converter, etc.
- **Switching characteristics**: Excellent switching performance, suitable for high frequency applications

Domain and module applications:

**Application fields and module examples**

1. **Power management and DC-DC converters**:
SUD50N06-07L-GE3-VB is suitable for efficient power management systems and DC-DC converters, especially in applications that need to handle medium to high currents. Due to its low RDS(ON) value (10mΩ @VGS = 10V), it can significantly reduce power loss and improve system efficiency. In battery-powered systems, communication power supplies, and power modules for portable electronic devices, it helps improve energy efficiency and extend battery life.

2. **Motor drive and industrial control**:
In motor drive and industrial automation applications, SUD50N06-07L-GE3-VB can effectively control the switching operation of the motor. Its high current carrying capacity (ID = 58A) and low on-resistance enable motor control systems to operate efficiently and reduce power losses, especially suitable for power tools, electric vehicles, robots and other high-efficiency drive systems. Using this MOSFET can ensure stable drive performance of the motor when the load changes.

3. **Solar Inverters and Power Conversion**:
In solar inverters and other power conversion systems, the SUD50N06-07L-GE3-VB effectively reduces losses and improves efficiency during the inverter process with its low RDS(ON) and high current handling capability (58A). Especially in inverters, this MOSFET can ensure more efficient power conversion and longer working life. It can handle frequent switching operations and provide stable power output. It is widely used in photovoltaic systems, UPS power systems, and power management of electric vehicles.

4. **Battery Management System (BMS)**:
In battery management systems, the SUD50N06-07L-GE3-VB is very suitable for controlling the charging and discharging process of batteries due to its low on-resistance and large current carrying capacity. It helps to improve battery charging efficiency and provides a stable current path when the battery voltage changes, ensuring efficient and safe operation of the battery management system. This MOSFET is commonly used in battery management of electric vehicles, power tools and other high-efficiency portable devices.

5. **Consumer electronics and high-frequency switching applications**:
Due to its low RDS(ON) and high switching speed, the SUD50N06-07L-GE3-VB is also suitable for high-frequency switching applications, especially in consumer electronic devices that require low power loss and high-speed response. For example, in smart home devices, LED driver power supplies, and wireless communication equipment, it can effectively improve system efficiency and reduce heat loss while maintaining fast response performance.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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