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SUD50N04-8M8P-E3-VB Product details
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**SUD50N04-8M8P-E3-VB Product Introduction**
**SUD50N04-8M8P-E3-VB** is a **single N-channel MOSFET** in **TO252** package, with a maximum drain-source voltage (VDS) of **40V** and a maximum drain current (ID) of **85A**, suitable for high current and high power switching applications. This MOSFET adopts **Trench technology**, and significantly reduces the on-resistance (RDS(ON)) to **6mΩ @ VGS=4.5V** and **5mΩ @ VGS=10V** through optimized structure, making it low loss and high efficiency in high current applications.
This MOSFET is particularly suitable for scenarios that require low on-resistance and high current carrying capacity, such as **DC-DC converters, battery management systems, industrial power supplies, and LED drive circuits**, etc. Its **2.5V** turn-on voltage (Vth) allows it to operate at a lower gate voltage, making it very suitable for high-performance, high-power density applications and can effectively improve the overall power conversion efficiency of the system.
**SUD50N04-8M8P-E3-VB** is a **single N-channel MOSFET** in **TO252** package, with a maximum drain-source voltage (VDS) of **40V** and a maximum drain current (ID) of **85A**, suitable for high current and high power switching applications. This MOSFET adopts **Trench technology**, and significantly reduces the on-resistance (RDS(ON)) to **6mΩ @ VGS=4.5V** and **5mΩ @ VGS=10V** through optimized structure, making it low loss and high efficiency in high current applications.
This MOSFET is particularly suitable for scenarios that require low on-resistance and high current carrying capacity, such as **DC-DC converters, battery management systems, industrial power supplies, and LED drive circuits**, etc. Its **2.5V** turn-on voltage (Vth) allows it to operate at a lower gate voltage, making it very suitable for high-performance, high-power density applications and can effectively improve the overall power conversion efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**SUD50N04-8M8P-E3-VB Detailed parameter description**
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
- **Maximum power loss**: About 90W (varies according to working conditions)
- **Thermal resistance (RthJC)**: Low, ensure low temperature rise operation
- **Switching speed**: High, suitable for high-speed switching applications
- **Operating temperature range**: -55°C to +150°C
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench
- **Maximum power loss**: About 90W (varies according to working conditions)
- **Thermal resistance (RthJC)**: Low, ensure low temperature rise operation
- **Switching speed**: High, suitable for high-speed switching applications
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
**Application fields and module examples**
1. **Power management and DC-DC converters**
**SUD50N04-8M8P-E3-VB** is particularly prominent in **DC-DC converters**. Due to its **low RDS(ON)** and **high current carrying capacity**, it can provide efficient power switching in power management systems, reduce energy loss and improve conversion efficiency. In **industrial power adapters, portable power supplies** and **server power systems** that require high current transmission, it can improve the energy efficiency and stability of the system.
2. **Battery Management System (BMS)**
In **battery management systems** (BMS), **SUD50N04-8M8P-E3-VB** plays an important role, especially in **battery charge and discharge management**. This MOSFET can efficiently control the charge and discharge process of the battery and provide fast response and reliable protection. It is particularly suitable for **electric vehicles, energy storage systems and renewable energy battery systems**, which can extend the battery life and improve battery performance.
3. **LED drive circuit**
In **LED drive** circuit, **SUD50N04-8M8P-E3-VB** can be used to stabilize the current of LED lamps and control their brightness. Due to its low RDS(ON) value, this MOSFET can efficiently manage the operating current of LEDs, reduce unnecessary power consumption, and improve the energy efficiency and life of lamps. It is widely used in **indoor and outdoor lighting, automotive LED lights, and commercial display screens**.
4. **Power tools and consumer electronics**
In **power tools** and **consumer electronic devices**, **SUD50N04-8M8P-E3-VB** can be used for power switching and current regulation. With its high current carrying capacity and low on-resistance, it can stably output high power, which is especially suitable for high-efficiency power tools and portable consumer electronic devices, such as **electric screwdrivers, electric shavers, smart home appliances**, etc.
5. **Electric Vehicles and Automotive Electronics**
In **electric vehicles** and **hybrid electric vehicles** (HEV), MOSFET is mainly used for battery management, energy recovery and electric drive systems. Due to its **high current carrying capacity** and **low on-resistance**, **SUD50N04-8M8P-E3-VB** can efficiently control the charging and discharging process of the battery in electric vehicles, ensuring stable system operation and effective temperature control. It is widely used in **electric vehicles, autonomous driving systems and power control units of hybrid vehicles**.
6. **Wireless Communication and Power Amplifiers**
Due to its excellent switching characteristics and low RDS(ON), **SUD50N04-8M8P-E3-VB** is also suitable for **wireless communication equipment** and **power amplifiers**, especially in the fields of signal amplification and power regulation. For example, it can be used in **base stations, RF power amplifiers, power line communication equipment**, etc., to ensure high efficiency and stable operation of the equipment.
1. **Power management and DC-DC converters**
**SUD50N04-8M8P-E3-VB** is particularly prominent in **DC-DC converters**. Due to its **low RDS(ON)** and **high current carrying capacity**, it can provide efficient power switching in power management systems, reduce energy loss and improve conversion efficiency. In **industrial power adapters, portable power supplies** and **server power systems** that require high current transmission, it can improve the energy efficiency and stability of the system.
2. **Battery Management System (BMS)**
In **battery management systems** (BMS), **SUD50N04-8M8P-E3-VB** plays an important role, especially in **battery charge and discharge management**. This MOSFET can efficiently control the charge and discharge process of the battery and provide fast response and reliable protection. It is particularly suitable for **electric vehicles, energy storage systems and renewable energy battery systems**, which can extend the battery life and improve battery performance.
3. **LED drive circuit**
In **LED drive** circuit, **SUD50N04-8M8P-E3-VB** can be used to stabilize the current of LED lamps and control their brightness. Due to its low RDS(ON) value, this MOSFET can efficiently manage the operating current of LEDs, reduce unnecessary power consumption, and improve the energy efficiency and life of lamps. It is widely used in **indoor and outdoor lighting, automotive LED lights, and commercial display screens**.
4. **Power tools and consumer electronics**
In **power tools** and **consumer electronic devices**, **SUD50N04-8M8P-E3-VB** can be used for power switching and current regulation. With its high current carrying capacity and low on-resistance, it can stably output high power, which is especially suitable for high-efficiency power tools and portable consumer electronic devices, such as **electric screwdrivers, electric shavers, smart home appliances**, etc.
5. **Electric Vehicles and Automotive Electronics**
In **electric vehicles** and **hybrid electric vehicles** (HEV), MOSFET is mainly used for battery management, energy recovery and electric drive systems. Due to its **high current carrying capacity** and **low on-resistance**, **SUD50N04-8M8P-E3-VB** can efficiently control the charging and discharging process of the battery in electric vehicles, ensuring stable system operation and effective temperature control. It is widely used in **electric vehicles, autonomous driving systems and power control units of hybrid vehicles**.
6. **Wireless Communication and Power Amplifiers**
Due to its excellent switching characteristics and low RDS(ON), **SUD50N04-8M8P-E3-VB** is also suitable for **wireless communication equipment** and **power amplifiers**, especially in the fields of signal amplification and power regulation. For example, it can be used in **base stations, RF power amplifiers, power line communication equipment**, etc., to ensure high efficiency and stable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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