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SUD50N04-09H-E3-VB Product details
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Product Introduction
**SUD50N04-09H-E3-VB** is a **single N-channel MOSFET** in **TO252** package. It adopts **Trench technology** and has ultra-low **RDS(ON)** and high current carrying capacity, which is suitable for high-efficiency power management and high-power switching applications. Its **VDS** is **40V**, **Vth** is **2.5V**, and the maximum drain current is **85A**. The **RDS(ON)** of this MOSFET is **6mΩ** at **VGS = 4.5V** and **5mΩ** at **VGS = 10V**, which makes it have extremely low conduction loss. Its excellent current carrying capacity and low on-resistance make it an ideal choice for fields such as high-efficiency power conversion, load switching, electric drive systems and battery management systems.
**SUD50N04-09H-E3-VB** is a **single N-channel MOSFET** in **TO252** package. It adopts **Trench technology** and has ultra-low **RDS(ON)** and high current carrying capacity, which is suitable for high-efficiency power management and high-power switching applications. Its **VDS** is **40V**, **Vth** is **2.5V**, and the maximum drain current is **85A**. The **RDS(ON)** of this MOSFET is **6mΩ** at **VGS = 4.5V** and **5mΩ** at **VGS = 10V**, which makes it have extremely low conduction loss. Its excellent current carrying capacity and low on-resistance make it an ideal choice for fields such as high-efficiency power conversion, load switching, electric drive systems and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **6mΩ** @ VGS = 4.5V
- **5mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Maximum power dissipation**: Provides low switching losses and high efficiency operation
- **Operating temperature range**: Suitable for standard industrial environments
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **6mΩ** @ VGS = 4.5V
- **5mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Maximum power dissipation**: Provides low switching losses and high efficiency operation
- **Operating temperature range**: Suitable for standard industrial environments
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**: **SUD50N04-09H-E3-VB** is widely used in **DC-DC converter**, especially in power conversion systems that require high current and high efficiency. Its **VDS** is **40V** and the maximum drain current is **85A**, which can withstand large current flow, and due to its ultra-low **RDS(ON)**, it can achieve extremely low energy loss during the switching process, thereby improving system efficiency. Suitable for high-efficiency power modules, power tools and high-efficiency battery charging systems.
2. **Electric drive system**: The **high current carrying capacity** and **low on-resistance** of this MOSFET make it an ideal choice for electric drive systems, especially in applications such as **electric vehicles, power tools and industrial motor drives**. In these applications, **SUD50N04-09H-E3-VB** can effectively control the current, reduce the power loss of the system, and improve the efficiency and performance of the motor.
3. **Battery Management System (BMS)**: Due to its low **RDS(ON)** and high current capability, **SUD50N04-09H-E3-VB** is also suitable for **Battery Management System** (BMS), especially during high current charging and discharging. This MOSFET can help efficiently manage the current flow in lithium batteries, electric vehicle batteries and energy storage systems, reduce energy losses, and improve system safety and reliability.
4. **Load Switch Application**: Due to its ultra-low on-resistance, **SUD50N04-09H-E3-VB** performs well in **load switch applications**, reducing power consumption and improving switching efficiency during the switching of high-power loads. This MOSFET is very suitable for load switch modules in home appliances, industrial control equipment and power management, ensuring efficient current switching and low temperature rise.
5. **High-efficiency power management system**: **SUD50N04-09H-E3-VB** can be used in **high-efficiency power management modules**, such as power converters, UPS power systems, and industrial power management systems. The low **RDS(ON)** and high **ID** characteristics make this MOSFET very suitable for systems that require efficient current control and minimal power loss. Whether it is a small power module or a high-power power system, this MOSFET can be used to achieve efficient power conversion and management.
6. **High-frequency switching applications**: For **high-frequency switching** applications, such as **wireless charging devices, communication equipment, and RF systems**, **SUD50N04-09H-E3-VB** provides an ideal solution. Due to its low **RDS(ON)**, this MOSFET can maintain efficient energy conversion in frequent switching applications and reduce heat accumulation, ensuring system stability and long-term reliable operation.
1. **DC-DC converter**: **SUD50N04-09H-E3-VB** is widely used in **DC-DC converter**, especially in power conversion systems that require high current and high efficiency. Its **VDS** is **40V** and the maximum drain current is **85A**, which can withstand large current flow, and due to its ultra-low **RDS(ON)**, it can achieve extremely low energy loss during the switching process, thereby improving system efficiency. Suitable for high-efficiency power modules, power tools and high-efficiency battery charging systems.
2. **Electric drive system**: The **high current carrying capacity** and **low on-resistance** of this MOSFET make it an ideal choice for electric drive systems, especially in applications such as **electric vehicles, power tools and industrial motor drives**. In these applications, **SUD50N04-09H-E3-VB** can effectively control the current, reduce the power loss of the system, and improve the efficiency and performance of the motor.
3. **Battery Management System (BMS)**: Due to its low **RDS(ON)** and high current capability, **SUD50N04-09H-E3-VB** is also suitable for **Battery Management System** (BMS), especially during high current charging and discharging. This MOSFET can help efficiently manage the current flow in lithium batteries, electric vehicle batteries and energy storage systems, reduce energy losses, and improve system safety and reliability.
4. **Load Switch Application**: Due to its ultra-low on-resistance, **SUD50N04-09H-E3-VB** performs well in **load switch applications**, reducing power consumption and improving switching efficiency during the switching of high-power loads. This MOSFET is very suitable for load switch modules in home appliances, industrial control equipment and power management, ensuring efficient current switching and low temperature rise.
5. **High-efficiency power management system**: **SUD50N04-09H-E3-VB** can be used in **high-efficiency power management modules**, such as power converters, UPS power systems, and industrial power management systems. The low **RDS(ON)** and high **ID** characteristics make this MOSFET very suitable for systems that require efficient current control and minimal power loss. Whether it is a small power module or a high-power power system, this MOSFET can be used to achieve efficient power conversion and management.
6. **High-frequency switching applications**: For **high-frequency switching** applications, such as **wireless charging devices, communication equipment, and RF systems**, **SUD50N04-09H-E3-VB** provides an ideal solution. Due to its low **RDS(ON)**, this MOSFET can maintain efficient energy conversion in frequent switching applications and reduce heat accumulation, ensuring system stability and long-term reliable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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