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SUD50N03-12P-E3-VB Product details
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SUD50N03-12P-E3-VB Product Introduction
SUD50N03-12P-E3-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low power loss applications. It has a maximum drain-source voltage (VDS) of 30V, a maximum drain current (ID) of 80A, and extremely low on-resistance (RDS(ON) = 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V). With its excellent conductivity and low switching losses, SUD50N03-12P-E3-VB is suitable for a variety of high-efficiency current regulation and power conversion applications. This MOSFET uses Trench technology, which gives it low on-resistance and high-frequency switching characteristics. It is very suitable for use in switching power supplies, motor drives, high-efficiency power conversion and other fields, helping to improve system efficiency, reduce energy loss and improve performance.
SUD50N03-12P-E3-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low power loss applications. It has a maximum drain-source voltage (VDS) of 30V, a maximum drain current (ID) of 80A, and extremely low on-resistance (RDS(ON) = 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V). With its excellent conductivity and low switching losses, SUD50N03-12P-E3-VB is suitable for a variety of high-efficiency current regulation and power conversion applications. This MOSFET uses Trench technology, which gives it low on-resistance and high-frequency switching characteristics. It is very suitable for use in switching power supplies, motor drives, high-efficiency power conversion and other fields, helping to improve system efficiency, reduce energy loss and improve performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SUD50N03-12P-E3-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology (optimized low on-resistance and high switching efficiency)
- **Maximum power consumption**: Suitable for high current applications, optimize heat dissipation design to reduce temperature rise
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology (optimized low on-resistance and high switching efficiency)
- **Maximum power consumption**: Suitable for high current applications, optimize heat dissipation design to reduce temperature rise
- **Switching speed**: High-speed switching capability, suitable for high-frequency applications
Domain and module applications：
SUD50N03-12P-E3-VB Applicable Fields and Modules
1. **Switching Power Supply (SMPS)**
SUD50N03-12P-E3-VB is widely used in switching power supplies (SMPS), especially for low voltage and high current converters such as DC-DC converters and AC-DC power adapters. Its low on-resistance and fast switching capability can significantly reduce power loss and improve power conversion efficiency, and is suitable for various high-efficiency power module designs, such as computer power supplies, consumer electronic equipment power supplies, etc.
2. **Motor Drive System**
This MOSFET is also widely used in motor drive systems, especially in motor control of power tools, household appliances and industrial automation equipment. Due to its high current carrying capacity and low on-resistance, SUD50N03-12P-E3-VB can provide efficient current control, reduce heat generation, and ensure efficient and stable operation of motor drive systems.
3. **Battery Management System (BMS)**
In the battery management system (BMS), SUD50N03-12P-E3-VB can be used for battery charge and discharge control. Its ultra-low on-resistance minimizes the energy loss of the battery during the charge and discharge process, prolongs the battery life, and improves the overall system efficiency. It is particularly suitable for electric vehicles (EV) and energy storage systems, and can effectively manage large current charging and discharging.
4. **LED drive system**
SUD50N03-12P-E3-VB can be used in high-efficiency LED drive systems, especially in commercial and industrial lighting. Due to its low on-resistance and high-frequency switching characteristics, it can effectively reduce power loss, provide stable and reliable current to the LED, ensure efficient energy conversion and extend the service life of the LED.
5. **Power Inverters**
This MOSFET can be used in solar cell inverters, wind power system inverters, and other types of power inverters. The SUD50N03-12P-E3-VB provides low on-resistance and excellent switching performance, which can improve the system's energy conversion efficiency and reduce heat loss. Its strong current handling capability and low energy loss make it very suitable for use in efficient power inverter designs.
6. **Wireless Charging System**
In wireless charging systems, the SUD50N03-12P-E3-VB can be used as a high-efficiency switching device, especially in applications with efficient energy transfer and fast charging. Its fast switching capability and low on-resistance ensure efficient operation of wireless charging systems and are widely used in wireless charging solutions for smartphones, power tools, and electric vehicles.
7. **High-frequency Power Converters**
This MOSFET is also suitable for high-frequency power converters, such as for RF power supplies, RF amplifiers, and high-frequency current management applications. Due to its fast switching performance and low on-resistance, SUD50N03-12P-E3-VB performs well in high-frequency environments, can effectively improve the energy efficiency of power supplies and the stability of systems, and is widely used in power conversion modules in wireless communications and electronic devices.
1. **Switching Power Supply (SMPS)**
SUD50N03-12P-E3-VB is widely used in switching power supplies (SMPS), especially for low voltage and high current converters such as DC-DC converters and AC-DC power adapters. Its low on-resistance and fast switching capability can significantly reduce power loss and improve power conversion efficiency, and is suitable for various high-efficiency power module designs, such as computer power supplies, consumer electronic equipment power supplies, etc.
2. **Motor Drive System**
This MOSFET is also widely used in motor drive systems, especially in motor control of power tools, household appliances and industrial automation equipment. Due to its high current carrying capacity and low on-resistance, SUD50N03-12P-E3-VB can provide efficient current control, reduce heat generation, and ensure efficient and stable operation of motor drive systems.
3. **Battery Management System (BMS)**
In the battery management system (BMS), SUD50N03-12P-E3-VB can be used for battery charge and discharge control. Its ultra-low on-resistance minimizes the energy loss of the battery during the charge and discharge process, prolongs the battery life, and improves the overall system efficiency. It is particularly suitable for electric vehicles (EV) and energy storage systems, and can effectively manage large current charging and discharging.
4. **LED drive system**
SUD50N03-12P-E3-VB can be used in high-efficiency LED drive systems, especially in commercial and industrial lighting. Due to its low on-resistance and high-frequency switching characteristics, it can effectively reduce power loss, provide stable and reliable current to the LED, ensure efficient energy conversion and extend the service life of the LED.
5. **Power Inverters**
This MOSFET can be used in solar cell inverters, wind power system inverters, and other types of power inverters. The SUD50N03-12P-E3-VB provides low on-resistance and excellent switching performance, which can improve the system's energy conversion efficiency and reduce heat loss. Its strong current handling capability and low energy loss make it very suitable for use in efficient power inverter designs.
6. **Wireless Charging System**
In wireless charging systems, the SUD50N03-12P-E3-VB can be used as a high-efficiency switching device, especially in applications with efficient energy transfer and fast charging. Its fast switching capability and low on-resistance ensure efficient operation of wireless charging systems and are widely used in wireless charging solutions for smartphones, power tools, and electric vehicles.
7. **High-frequency Power Converters**
This MOSFET is also suitable for high-frequency power converters, such as for RF power supplies, RF amplifiers, and high-frequency current management applications. Due to its fast switching performance and low on-resistance, SUD50N03-12P-E3-VB performs well in high-frequency environments, can effectively improve the energy efficiency of power supplies and the stability of systems, and is widely used in power conversion modules in wireless communications and electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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