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SUD50N03-10C-VB Product details
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Product Introduction
**SUD50N03-10C-VB** is a unipolar N-channel MOSFET in TO252 package with a maximum drain-source voltage (VDS) of 30V, suitable for low-voltage and high-current applications. The gate-source voltage (VGS) of this MOSFET is ±20V at maximum, with a low threshold voltage (Vth) of 1.7V, and can be started at a lower gate voltage. Its on-resistance (RDS(ON)) is 6mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, with very low conduction losses, providing efficient performance under high current load conditions. The maximum drain current (ID) can reach 80A, and Trench technology is used to provide excellent switching performance and low power loss. **SUD50N03-10C-VB** is an ideal choice for power switching, power management, drive circuits and other fields, and can provide efficient and stable performance under high load conditions.
**SUD50N03-10C-VB** is a unipolar N-channel MOSFET in TO252 package with a maximum drain-source voltage (VDS) of 30V, suitable for low-voltage and high-current applications. The gate-source voltage (VGS) of this MOSFET is ±20V at maximum, with a low threshold voltage (Vth) of 1.7V, and can be started at a lower gate voltage. Its on-resistance (RDS(ON)) is 6mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, with very low conduction losses, providing efficient performance under high current load conditions. The maximum drain current (ID) can reach 80A, and Trench technology is used to provide excellent switching performance and low power loss. **SUD50N03-10C-VB** is an ideal choice for power switching, power management, drive circuits and other fields, and can provide efficient and stable performance under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: SUD50N03-10C-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C (depending on thermal design)
- **Switching speed**: Suitable for high-speed switching applications, with low conduction loss and efficient power conversion capability
- **Application type**: Power management, power tools, drive circuits, load switches, high-efficiency switching power supplies, etc.
- **Model**: SUD50N03-10C-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C (depending on thermal design)
- **Switching speed**: Suitable for high-speed switching applications, with low conduction loss and efficient power conversion capability
- **Application type**: Power management, power tools, drive circuits, load switches, high-efficiency switching power supplies, etc.
Domain and module applications：
Application fields and module examples
1. **Power management and power conversion**
- **SUD50N03-10C-VB** is widely used in power management systems and power conversion circuits, especially in situations where low voltage and high current are required. The low on-resistance of MOSFET ensures high efficiency under high current load. It is commonly used in power management circuits such as DC-DC converters, AC-DC power adapters, power conversion modules, etc., which can optimize energy conversion and reduce power loss.
2. **Power tools and motor drives**
- In power tools and motor drive circuits, **SUD50N03-10C-VB** provides high current handling capability and low conduction loss, and is suitable for use in drive systems such as power tools, electric pumps, fans, etc. Its low on-resistance can reduce the heat loss of the system and ensure the efficient operation of power tools under high load conditions, extending the service life of the equipment.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
- In the battery management system (BMS) and electric drive control system of electric vehicles (EV) and hybrid electric vehicles (HEV), **SUD50N03-10C-VB** can be used as a high-efficiency switching element to manage the charging and discharging process of the battery. The low on-resistance and high current carrying capacity of the MOSFET ensure high efficiency of the battery system and help improve the overall energy efficiency and battery life of electric vehicles.
4. **DC Motor Control**
- **SUD50N03-10C-VB** can be used in DC motor control systems, especially in motor drive circuits that require fast switching and high current handling. The MOSFET can effectively control the starting and speed of the motor, reduce power loss, and provide smooth current output, making the motor drive system run more efficiently.
5. **Switching Power Supplies and Load Switches**
- In switching power supplies (SMPS) and load switch modules, **SUD50N03-10C-VB** can be used as the main switching element to provide efficient power conversion and low-loss current transmission. Its fast switching performance and low on-resistance make it suitable for use in power modules, battery management systems, and other high-efficiency switching applications, especially in situations requiring high power density and high current carrying capacity.
6. **High-speed Switching Applications**
- **SUD50N03-10C-VB** performs well in high-speed switching applications, especially for high-speed communication equipment and pulse width modulation (PWM) control systems. The fast switching characteristics of MOSFETs make them ideal for these systems, capable of handling high-frequency signals without losing efficiency.
Through its low on-resistance, high current carrying capacity and excellent switching performance, **SUD50N03-10C-VB** performs well in many fields such as power management, drive circuits, power tools, DC motor control, etc., and is a key component for achieving high-efficiency current conversion and power control.
1. **Power management and power conversion**
- **SUD50N03-10C-VB** is widely used in power management systems and power conversion circuits, especially in situations where low voltage and high current are required. The low on-resistance of MOSFET ensures high efficiency under high current load. It is commonly used in power management circuits such as DC-DC converters, AC-DC power adapters, power conversion modules, etc., which can optimize energy conversion and reduce power loss.
2. **Power tools and motor drives**
- In power tools and motor drive circuits, **SUD50N03-10C-VB** provides high current handling capability and low conduction loss, and is suitable for use in drive systems such as power tools, electric pumps, fans, etc. Its low on-resistance can reduce the heat loss of the system and ensure the efficient operation of power tools under high load conditions, extending the service life of the equipment.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
- In the battery management system (BMS) and electric drive control system of electric vehicles (EV) and hybrid electric vehicles (HEV), **SUD50N03-10C-VB** can be used as a high-efficiency switching element to manage the charging and discharging process of the battery. The low on-resistance and high current carrying capacity of the MOSFET ensure high efficiency of the battery system and help improve the overall energy efficiency and battery life of electric vehicles.
4. **DC Motor Control**
- **SUD50N03-10C-VB** can be used in DC motor control systems, especially in motor drive circuits that require fast switching and high current handling. The MOSFET can effectively control the starting and speed of the motor, reduce power loss, and provide smooth current output, making the motor drive system run more efficiently.
5. **Switching Power Supplies and Load Switches**
- In switching power supplies (SMPS) and load switch modules, **SUD50N03-10C-VB** can be used as the main switching element to provide efficient power conversion and low-loss current transmission. Its fast switching performance and low on-resistance make it suitable for use in power modules, battery management systems, and other high-efficiency switching applications, especially in situations requiring high power density and high current carrying capacity.
6. **High-speed Switching Applications**
- **SUD50N03-10C-VB** performs well in high-speed switching applications, especially for high-speed communication equipment and pulse width modulation (PWM) control systems. The fast switching characteristics of MOSFETs make them ideal for these systems, capable of handling high-frequency signals without losing efficiency.
Through its low on-resistance, high current carrying capacity and excellent switching performance, **SUD50N03-10C-VB** performs well in many fields such as power management, drive circuits, power tools, DC motor control, etc., and is a key component for achieving high-efficiency current conversion and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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