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SUD50N03-09P-GE3-VB Product details
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**SUD50N03-09P-GE3-VB Product Introduction**
**SUD50N03-09P-GE3-VB** is a single N-channel **MOSFET** in **TO252** package, featuring high efficiency and low power consumption. It can carry a maximum drain current of **80A** at a maximum drain-source voltage (VDS) of **30V**, making it suitable for high-current switch control. This MOSFET uses **Trench technology** and has a low **on-resistance** (RDS(ON) of only 6mΩ @ VGS=4.5V and 5mΩ @ VGS=10V), which helps reduce energy losses and improve overall system efficiency.
Its **turn-on voltage (Vth)** range is **1.7V**, which is suitable for applications requiring efficient power control, especially in power electronic devices that require low on-resistance and high current handling capabilities. This MOSFET is widely used in**power management, battery drive, DC-DC converter** and other fields to help optimize energy efficiency, reduce heat and extend system life.
**SUD50N03-09P-GE3-VB** is a single N-channel **MOSFET** in **TO252** package, featuring high efficiency and low power consumption. It can carry a maximum drain current of **80A** at a maximum drain-source voltage (VDS) of **30V**, making it suitable for high-current switch control. This MOSFET uses **Trench technology** and has a low **on-resistance** (RDS(ON) of only 6mΩ @ VGS=4.5V and 5mΩ @ VGS=10V), which helps reduce energy losses and improve overall system efficiency.
Its **turn-on voltage (Vth)** range is **1.7V**, which is suitable for applications requiring efficient power control, especially in power electronic devices that require low on-resistance and high current handling capabilities. This MOSFET is widely used in**power management, battery drive, DC-DC converter** and other fields to help optimize energy efficiency, reduce heat and extend system life.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**SUD50N03-09P-GE3-VB Detailed parameter description**
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
- **Maximum power loss (Ptot)**: 90W (calculated based on current and on-resistance)
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
- **Maximum power loss (Ptot)**: 90W (calculated based on current and on-resistance)
Domain and module applications：
**Application fields and module examples**
1. **Power management and DC-DC converters**
**SUD50N03-09P-GE3-VB** As a high-current, high-efficiency MOSFET, it is widely used in **DC-DC converters**. It is capable of carrying large currents (up to 80A) at low voltages (30V), making it an ideal choice for power conversion and regulation. Due to its low on-resistance characteristics, this MOSFET can reduce power losses in current transmission and improve conversion efficiency, making it suitable for use in **battery-powered devices, server power supplies, power tools, electric toys** and other fields.
2. **Battery Management System (BMS)**
**SUD50N03-09P-GE3-VB**'s low on-resistance and high current handling capability make it perform well in **battery management systems (BMS)**. In battery management for electric vehicles (EVs) or portable devices, this MOSFET can effectively regulate the battery's charge and discharge process, prevent the battery from over-discharging or overcharging, ensure that the battery operates within a safe range and improve system efficiency.
3. **Smart home and automation control**
In **smart home systems** and **automation control modules**, **SUD50N03-09P-GE3-VB** can be used as a load switch element for controlling smart home appliances, electric curtains, smart lights and other equipment. Its superior low on-resistance and high current carrying capacity enable it to switch loads stably and quickly, reduce heat and improve the overall energy efficiency of smart home systems, and is suitable for applications such as **smart home appliances, electric curtains, and electric access control systems**.
4. **Communication equipment and power amplifiers**
In **communication equipment**, such as **wireless communication base stations and power amplifiers**, MOSFET is used for signal switching regulation and power control. **SUD50N03-09P-GE3-VB**'s high current carrying capacity and low on-resistance enable it to work efficiently in these applications, reduce power loss and improve system stability, and is widely used in **4G/5G base stations, Wi-Fi routers, signal amplifiers** and other equipment.
5. **LED lighting and drive circuits**
**SUD50N03-09P-GE3-VB** can be used in **LED drive circuits** to adjust the current of LED lamps through switches to achieve brightness adjustment. Due to its low on-resistance, it can reduce energy loss and improve power efficiency. It is widely used in **commercial lighting, indoor lighting, outdoor LED display screens** and other fields to ensure efficient power transmission and extend the service life of LED light sources.
6. **Automotive electronics and electric vehicles**
In **electric vehicles** and **hybrid vehicles**, **SUD50N03-09P-GE3-VB** is used in battery management and power transmission systems to efficiently control the battery charging and discharging process. Its excellent high current handling capability makes it a key component in electric vehicle battery management systems, helping to improve battery efficiency and extend battery life.
7. **Power Tools and Consumer Electronics**
In **Power Tools** and **Consumer Electronics**, **SUD50N03-09P-GE3-VB** can be used in power regulation and drive circuits to provide efficient power management. Its low RDS(ON) and high current handling capability make this MOSFET suitable for high-performance power tools, electric toys and portable electronic devices, reducing power consumption and improving overall system efficiency.
1. **Power management and DC-DC converters**
**SUD50N03-09P-GE3-VB** As a high-current, high-efficiency MOSFET, it is widely used in **DC-DC converters**. It is capable of carrying large currents (up to 80A) at low voltages (30V), making it an ideal choice for power conversion and regulation. Due to its low on-resistance characteristics, this MOSFET can reduce power losses in current transmission and improve conversion efficiency, making it suitable for use in **battery-powered devices, server power supplies, power tools, electric toys** and other fields.
2. **Battery Management System (BMS)**
**SUD50N03-09P-GE3-VB**'s low on-resistance and high current handling capability make it perform well in **battery management systems (BMS)**. In battery management for electric vehicles (EVs) or portable devices, this MOSFET can effectively regulate the battery's charge and discharge process, prevent the battery from over-discharging or overcharging, ensure that the battery operates within a safe range and improve system efficiency.
3. **Smart home and automation control**
In **smart home systems** and **automation control modules**, **SUD50N03-09P-GE3-VB** can be used as a load switch element for controlling smart home appliances, electric curtains, smart lights and other equipment. Its superior low on-resistance and high current carrying capacity enable it to switch loads stably and quickly, reduce heat and improve the overall energy efficiency of smart home systems, and is suitable for applications such as **smart home appliances, electric curtains, and electric access control systems**.
4. **Communication equipment and power amplifiers**
In **communication equipment**, such as **wireless communication base stations and power amplifiers**, MOSFET is used for signal switching regulation and power control. **SUD50N03-09P-GE3-VB**'s high current carrying capacity and low on-resistance enable it to work efficiently in these applications, reduce power loss and improve system stability, and is widely used in **4G/5G base stations, Wi-Fi routers, signal amplifiers** and other equipment.
5. **LED lighting and drive circuits**
**SUD50N03-09P-GE3-VB** can be used in **LED drive circuits** to adjust the current of LED lamps through switches to achieve brightness adjustment. Due to its low on-resistance, it can reduce energy loss and improve power efficiency. It is widely used in **commercial lighting, indoor lighting, outdoor LED display screens** and other fields to ensure efficient power transmission and extend the service life of LED light sources.
6. **Automotive electronics and electric vehicles**
In **electric vehicles** and **hybrid vehicles**, **SUD50N03-09P-GE3-VB** is used in battery management and power transmission systems to efficiently control the battery charging and discharging process. Its excellent high current handling capability makes it a key component in electric vehicle battery management systems, helping to improve battery efficiency and extend battery life.
7. **Power Tools and Consumer Electronics**
In **Power Tools** and **Consumer Electronics**, **SUD50N03-09P-GE3-VB** can be used in power regulation and drive circuits to provide efficient power management. Its low RDS(ON) and high current handling capability make this MOSFET suitable for high-performance power tools, electric toys and portable electronic devices, reducing power consumption and improving overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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