中文
English
SUD50N02-04P-E3-VB Product details
Back to previous pageProduct introduction：
**SUD50N02-04P-E3-VB Product Introduction**
SUD50N02-04P-E3-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for high current control in low voltage applications. Its gate-source threshold voltage (Vth) is between 0.5V and 1.5V, which enables it to turn on quickly at a lower gate voltage and provide a fast response. The on-resistance (RDS(ON)) of this MOSFET is very low, with a maximum of 6mΩ @VGS = 2.5V and a minimum of 4.5mΩ @VGS = 4.5V, which significantly reduces power loss when transmitting large currents. Capable of carrying drain currents up to 100A, the SUD50N02-04P-E3-VB is ideal for applications requiring high power density and high efficiency, especially in power management, power conversion, drive circuits, and battery management systems.
SUD50N02-04P-E3-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for high current control in low voltage applications. Its gate-source threshold voltage (Vth) is between 0.5V and 1.5V, which enables it to turn on quickly at a lower gate voltage and provide a fast response. The on-resistance (RDS(ON)) of this MOSFET is very low, with a maximum of 6mΩ @VGS = 2.5V and a minimum of 4.5mΩ @VGS = 4.5V, which significantly reduces power loss when transmitting large currents. Capable of carrying drain currents up to 100A, the SUD50N02-04P-E3-VB is ideal for applications requiring high power density and high efficiency, especially in power management, power conversion, drive circuits, and battery management systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**SUD50N02-04P-E3-VB Detailed Parameters**
- **Package Type**: TO252
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 20V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 0.5V ~ 1.5V
- **On-Resistance (RDS(ON))**:
- 6mΩ @VGS = 2.5V
- 4.5mΩ @VGS = 4.5V
- **Maximum Drain Current (ID)**: 100A
- **Technology Type**: Trench
- **Maximum Power Loss**: Extremely low on-resistance reduces power loss, suitable for high-performance applications
- **Operating Temperature Range**: -55°C to 150°C
- **Heat dissipation**: Highly efficient heat dissipation design for high current applications
- **Package Type**: TO252
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 20V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 0.5V ~ 1.5V
- **On-Resistance (RDS(ON))**:
- 6mΩ @VGS = 2.5V
- 4.5mΩ @VGS = 4.5V
- **Maximum Drain Current (ID)**: 100A
- **Technology Type**: Trench
- **Maximum Power Loss**: Extremely low on-resistance reduces power loss, suitable for high-performance applications
- **Operating Temperature Range**: -55°C to 150°C
- **Heat dissipation**: Highly efficient heat dissipation design for high current applications
Domain and module applications：
**Application fields and module examples**
1. **Power management and DC-DC converter**:
The low on-resistance (RDS(ON) = 4.5mΩ @VGS = 4.5V) of SUD50N02-04P-E3-VB makes it very suitable for power management systems, especially in high-efficiency DC-DC converters. It can significantly reduce power loss and improve power conversion efficiency, making it very suitable for battery-powered devices such as power tools, power adapters, LED driver power supplies and other high-efficiency applications.
2. **Motor drive and control**:
The high current carrying capacity (ID = 100A) of this MOSFET makes it an ideal choice for driving high-power motors (such as brushless DC motors BLDC) and stepper motors. Whether in power tools, electric vehicles, or other applications that require high efficiency and high current drive, SUD50N02-04P-E3-VB can provide stable performance and optimize the efficiency and response speed of the motor.
3. **Inverter and Power Conversion**:
In the field of inverter and power conversion, SUD50N02-04P-E3-VB can be used to optimize the efficiency of solar inverters, UPS systems and frequency converters. It provides low on-resistance in these high-power, high-current applications, making power conversion more efficient and reducing heat loss in the system. This makes this MOSFET suitable for large-scale energy conversion and energy storage systems.
4. **Battery Management System (BMS)**:
SUD50N02-04P-E3-VB is widely used in battery management systems (BMS), especially in electric vehicles and energy storage systems. Due to its high current carrying capacity, it can effectively control the charging and discharging process of the battery, ensuring the efficient operation of the battery system. At the same time, due to its low on-resistance, it helps to improve the overall efficiency of the battery management system and extend the battery life.
5. **Consumer Electronics and Power Regulation**:
This MOSFET can also be used in consumer electronics, such as battery-powered devices, smart homes and mobile devices. Its low on-resistance and high current carrying capacity enable it to improve the efficiency of power regulation in these fields, reduce power loss and heat generation, thereby improving system reliability and service life.
1. **Power management and DC-DC converter**:
The low on-resistance (RDS(ON) = 4.5mΩ @VGS = 4.5V) of SUD50N02-04P-E3-VB makes it very suitable for power management systems, especially in high-efficiency DC-DC converters. It can significantly reduce power loss and improve power conversion efficiency, making it very suitable for battery-powered devices such as power tools, power adapters, LED driver power supplies and other high-efficiency applications.
2. **Motor drive and control**:
The high current carrying capacity (ID = 100A) of this MOSFET makes it an ideal choice for driving high-power motors (such as brushless DC motors BLDC) and stepper motors. Whether in power tools, electric vehicles, or other applications that require high efficiency and high current drive, SUD50N02-04P-E3-VB can provide stable performance and optimize the efficiency and response speed of the motor.
3. **Inverter and Power Conversion**:
In the field of inverter and power conversion, SUD50N02-04P-E3-VB can be used to optimize the efficiency of solar inverters, UPS systems and frequency converters. It provides low on-resistance in these high-power, high-current applications, making power conversion more efficient and reducing heat loss in the system. This makes this MOSFET suitable for large-scale energy conversion and energy storage systems.
4. **Battery Management System (BMS)**:
SUD50N02-04P-E3-VB is widely used in battery management systems (BMS), especially in electric vehicles and energy storage systems. Due to its high current carrying capacity, it can effectively control the charging and discharging process of the battery, ensuring the efficient operation of the battery system. At the same time, due to its low on-resistance, it helps to improve the overall efficiency of the battery management system and extend the battery life.
5. **Consumer Electronics and Power Regulation**:
This MOSFET can also be used in consumer electronics, such as battery-powered devices, smart homes and mobile devices. Its low on-resistance and high current carrying capacity enable it to improve the efficiency of power regulation in these fields, reduce power loss and heat generation, thereby improving system reliability and service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
