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SUD45N05-20L-VB Product details
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SUD45N05-20L-VB MOSFET Product Introduction
**SUD45N05-20L-VB** is a high-performance N-type MOSFET in TO252 package with low on-resistance and high current carrying capacity, suitable for applications requiring high efficiency and high current. The drain-source voltage (VDS) of this MOSFET is 60V and the maximum drain current (ID) is 58A. It is particularly suitable for high-power power management, load switching, battery management and industrial control systems. By adopting Trench technology, SUD45N05-20L-VB can significantly reduce power loss while providing high efficiency. Its low on-resistance (RDS(ON)) is 13mΩ (@ VGS = 4.5V) and 10mΩ (@ VGS = 10V) at different gate-source voltages. This makes it an ideal switching element in various high-current, high-power electronic systems.
**SUD45N05-20L-VB** is a high-performance N-type MOSFET in TO252 package with low on-resistance and high current carrying capacity, suitable for applications requiring high efficiency and high current. The drain-source voltage (VDS) of this MOSFET is 60V and the maximum drain current (ID) is 58A. It is particularly suitable for high-power power management, load switching, battery management and industrial control systems. By adopting Trench technology, SUD45N05-20L-VB can significantly reduce power loss while providing high efficiency. Its low on-resistance (RDS(ON)) is 13mΩ (@ VGS = 4.5V) and 10mΩ (@ VGS = 10V) at different gate-source voltages. This makes it an ideal switching element in various high-current, high-power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: SUD45N05-20L-VB
- **Package**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology
- **Model**: SUD45N05-20L-VB
- **Package**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON)）**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology
Domain and module applications：
Product application areas and module examples
1. **Power management and DC-DC converter**:
SUD45N05-20L-VB is very suitable for power management, especially as a switching element in DC-DC converters. Its low on-resistance and high current carrying capacity enable it to efficiently complete the voltage conversion and current regulation of the power supply and reduce energy loss. Common applications include high-efficiency power modules, LED driver power supplies, battery chargers and other fields, especially suitable for applications requiring high efficiency and high current output.
2. **Load switching and power regulation**:
The low RDS(ON) characteristics of this MOSFET make it very suitable for load switching and power regulation applications. In industrial automation, power distribution, smart home and other fields, SUD45N05-20L-VB can be used as a power switching element to provide stable and fast load switching in the power system. Its strong current carrying capacity enables it to meet the needs of high-power loads and improve the stability and efficiency of the system.
3. **Battery Management System (BMS)**:
Due to its high current capability and low on-resistance, the SUD45N05-20L-VB performs well in battery management systems (BMS), which can efficiently control the battery charging and discharging process, and protect the battery from overcharging and over-discharging through precise current management. Application scenarios include electric vehicles, battery energy storage systems, portable devices, etc.
4. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
In electric vehicles (EV) and hybrid electric vehicles (HEV), the SUD45N05-20L-VB, as a power switching element, can effectively manage the battery charging and discharging process and provide a stable power supply to the drive motor. In the battery management system, power system and DC-DC converter of electric vehicles, the high efficiency of MOSFET can maximize battery utilization and extend the driving range.
5. **Industrial Control and Robotics**:
This MOSFET can also provide a reliable power management solution in industrial control and robotics applications. In the fields of motor drive, power distribution and intelligent device control, SUD45N05-20L-VB can achieve efficient power regulation and stable current supply. Whether in automated production lines or in robotic systems, SUD45N05-20L-VB can ensure efficient operation of the system.
1. **Power management and DC-DC converter**:
SUD45N05-20L-VB is very suitable for power management, especially as a switching element in DC-DC converters. Its low on-resistance and high current carrying capacity enable it to efficiently complete the voltage conversion and current regulation of the power supply and reduce energy loss. Common applications include high-efficiency power modules, LED driver power supplies, battery chargers and other fields, especially suitable for applications requiring high efficiency and high current output.
2. **Load switching and power regulation**:
The low RDS(ON) characteristics of this MOSFET make it very suitable for load switching and power regulation applications. In industrial automation, power distribution, smart home and other fields, SUD45N05-20L-VB can be used as a power switching element to provide stable and fast load switching in the power system. Its strong current carrying capacity enables it to meet the needs of high-power loads and improve the stability and efficiency of the system.
3. **Battery Management System (BMS)**:
Due to its high current capability and low on-resistance, the SUD45N05-20L-VB performs well in battery management systems (BMS), which can efficiently control the battery charging and discharging process, and protect the battery from overcharging and over-discharging through precise current management. Application scenarios include electric vehicles, battery energy storage systems, portable devices, etc.
4. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
In electric vehicles (EV) and hybrid electric vehicles (HEV), the SUD45N05-20L-VB, as a power switching element, can effectively manage the battery charging and discharging process and provide a stable power supply to the drive motor. In the battery management system, power system and DC-DC converter of electric vehicles, the high efficiency of MOSFET can maximize battery utilization and extend the driving range.
5. **Industrial Control and Robotics**:
This MOSFET can also provide a reliable power management solution in industrial control and robotics applications. In the fields of motor drive, power distribution and intelligent device control, SUD45N05-20L-VB can achieve efficient power regulation and stable current supply. Whether in automated production lines or in robotic systems, SUD45N05-20L-VB can ensure efficient operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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