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SUD40N02-3M3P-E3-VB Product details
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1. **Product Introduction**
SUD40N02-3M3P-E3-VB is a unipolar N-channel power MOSFET in TO252 package, designed with advanced Trench technology, optimized for low-voltage, high-efficiency current control applications. This MOSFET has a maximum drain-source voltage (VDS) of 20V, supports a drain current (ID) of up to 100A, and has a very low on-resistance (RDS(ON) = 4.5mΩ) at a gate-source voltage (VGS) of 4.5V. This gives it excellent performance in low-voltage, high-current applications, effectively reducing power losses and improving system efficiency. SUD40N02-3M3P-E3-VB is suitable for applications in high-speed switching, power management, load switching, motor drive and other fields, especially in power electronic systems that require high efficiency and low energy consumption.
SUD40N02-3M3P-E3-VB is a unipolar N-channel power MOSFET in TO252 package, designed with advanced Trench technology, optimized for low-voltage, high-efficiency current control applications. This MOSFET has a maximum drain-source voltage (VDS) of 20V, supports a drain current (ID) of up to 100A, and has a very low on-resistance (RDS(ON) = 4.5mΩ) at a gate-source voltage (VGS) of 4.5V. This gives it excellent performance in low-voltage, high-current applications, effectively reducing power losses and improving system efficiency. SUD40N02-3M3P-E3-VB is suitable for applications in high-speed switching, power management, load switching, motor drive and other fields, especially in power electronic systems that require high efficiency and low energy consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description**
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (at VGS = 2.5V)
- 4.5mΩ (at VGS = 4.5V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
**Key parameter description:**
- **VDS (drain-source voltage)**: The maximum drain-source voltage is 20V, which is suitable for efficient current switching and control in low voltage systems.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, which is suitable for control systems with a variety of gate drive voltage ranges.
- **Vth (turn-on voltage)**: The turn-on voltage is in the range of 0.5V ~ 1.5V, which can start at a lower gate-source voltage and adapt to low-voltage applications.
- **RDS(ON) (on-resistance)**: At VGS = 4.5V, the on-resistance is 4.5mΩ, which can significantly reduce conduction losses and improve system efficiency.
- **ID (drain current)**: The maximum drain current is 100A, which is suitable for high current loads and can stably control the flow of large currents.
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (at VGS = 2.5V)
- 4.5mΩ (at VGS = 4.5V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
**Key parameter description:**
- **VDS (drain-source voltage)**: The maximum drain-source voltage is 20V, which is suitable for efficient current switching and control in low voltage systems.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, which is suitable for control systems with a variety of gate drive voltage ranges.
- **Vth (turn-on voltage)**: The turn-on voltage is in the range of 0.5V ~ 1.5V, which can start at a lower gate-source voltage and adapt to low-voltage applications.
- **RDS(ON) (on-resistance)**: At VGS = 4.5V, the on-resistance is 4.5mΩ, which can significantly reduce conduction losses and improve system efficiency.
- **ID (drain current)**: The maximum drain current is 100A, which is suitable for high current loads and can stably control the flow of large currents.
Domain and module applications：
3. **Application fields and module examples**
**1. Power management and load switch:**
SUD40N02-3M3P-E3-VB is suitable for low-voltage power management systems, especially as a load switch in high-efficiency switching power supplies (SMPS) and battery management systems (BMS). Its low on-resistance (6mΩ@VGS=2.5V, 4.5mΩ@VGS=4.5V) effectively reduces power loss and improves the efficiency of the power system. It can stably control the switch of current, especially suitable for use in chargers and battery protection circuits to ensure stable charging and discharging of batteries.
**2. High-power load switch and motor drive:**
SUD40N02-3M3P-E3-VB can be used in motor drive systems, such as DC motors (DCM) or brushless DC motors (BLDC) drive circuits. It supports currents up to 100A and is suitable for applications that require high current drive, such as motor drive systems for power tools, electric bicycles, and household appliances. Its low RDS(ON) can effectively reduce the heat and power loss caused by switching losses during motor drive and improve motor efficiency.
**3. Battery Management System (BMS) and Charger Applications: **
SUD40N02-3M3P-E3-VB is used as a switching element in the battery management system to control the charging and discharging process of the battery and protect the battery from damage caused by overcharging and over-discharging. Its low on-resistance and high current carrying capacity make it suitable for fast charging and high current battery protection systems. Especially in the fields of electric vehicles, UPS power supplies, battery packs, etc., it can provide efficient battery management and safety protection functions.
**4. Inverter and Solar Power Conversion: **
In solar inverters and other power conversion systems, SUD40N02-3M3P-E3-VB can be used as an efficient switching element to handle high current and low voltage during power conversion. Due to its ultra-low RDS(ON) and high maximum current capability, this MOSFET can effectively reduce switching losses and improve the conversion efficiency of the system, and is suitable for high-efficiency current switching in power electronic equipment.
**5. Fast switching and signal processing: **
SUD40N02-3M3P-E3-VB can also be used in fast switching circuits and signal processing systems, especially in high-speed switching power supplies and communication equipment. Due to its extremely low on-resistance and fast response characteristics, this MOSFET can achieve fast current switching and is suitable for applications with strict requirements on switching speed, such as communication equipment, signal conditioning and processing modules.
**Summary**:
SUD40N02-3M3P-E3-VB is a high-efficiency N-channel power MOSFET with a drain-source voltage of 20V and a drain current of 100A. Its low on-resistance (4.5mΩ) enables it to perform well in high-efficiency current control. It is widely used in power electronics applications with high efficiency and low power consumption, such as power management, motor drive, battery management system, charger, solar inverter, etc. Its excellent performance in high current and low voltage environment makes it an important switching element in the field of modern power electronics.
**1. Power management and load switch:**
SUD40N02-3M3P-E3-VB is suitable for low-voltage power management systems, especially as a load switch in high-efficiency switching power supplies (SMPS) and battery management systems (BMS). Its low on-resistance (6mΩ@VGS=2.5V, 4.5mΩ@VGS=4.5V) effectively reduces power loss and improves the efficiency of the power system. It can stably control the switch of current, especially suitable for use in chargers and battery protection circuits to ensure stable charging and discharging of batteries.
**2. High-power load switch and motor drive:**
SUD40N02-3M3P-E3-VB can be used in motor drive systems, such as DC motors (DCM) or brushless DC motors (BLDC) drive circuits. It supports currents up to 100A and is suitable for applications that require high current drive, such as motor drive systems for power tools, electric bicycles, and household appliances. Its low RDS(ON) can effectively reduce the heat and power loss caused by switching losses during motor drive and improve motor efficiency.
**3. Battery Management System (BMS) and Charger Applications: **
SUD40N02-3M3P-E3-VB is used as a switching element in the battery management system to control the charging and discharging process of the battery and protect the battery from damage caused by overcharging and over-discharging. Its low on-resistance and high current carrying capacity make it suitable for fast charging and high current battery protection systems. Especially in the fields of electric vehicles, UPS power supplies, battery packs, etc., it can provide efficient battery management and safety protection functions.
**4. Inverter and Solar Power Conversion: **
In solar inverters and other power conversion systems, SUD40N02-3M3P-E3-VB can be used as an efficient switching element to handle high current and low voltage during power conversion. Due to its ultra-low RDS(ON) and high maximum current capability, this MOSFET can effectively reduce switching losses and improve the conversion efficiency of the system, and is suitable for high-efficiency current switching in power electronic equipment.
**5. Fast switching and signal processing: **
SUD40N02-3M3P-E3-VB can also be used in fast switching circuits and signal processing systems, especially in high-speed switching power supplies and communication equipment. Due to its extremely low on-resistance and fast response characteristics, this MOSFET can achieve fast current switching and is suitable for applications with strict requirements on switching speed, such as communication equipment, signal conditioning and processing modules.
**Summary**:
SUD40N02-3M3P-E3-VB is a high-efficiency N-channel power MOSFET with a drain-source voltage of 20V and a drain current of 100A. Its low on-resistance (4.5mΩ) enables it to perform well in high-efficiency current control. It is widely used in power electronics applications with high efficiency and low power consumption, such as power management, motor drive, battery management system, charger, solar inverter, etc. Its excellent performance in high current and low voltage environment makes it an important switching element in the field of modern power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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