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SUD35N10-26P-GE3-VB Product details
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SUD35N10-26P-GE3-VB MOSFET Product Introduction
**SUD35N10-26P-GE3-VB** is a high-efficiency N-type MOSFET in a TO252 package with excellent current carrying capability and low on-resistance. With a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 40A, this MOSFET is suitable for applications such as power management, load switching, and power regulation that require high current and high efficiency. Its on-resistance (RDS(ON)) is 35mΩ (@ VGS = 4.5V) and 30mΩ (@ VGS = 10V) at different gate-source voltages, which gives this MOSFET a significant advantage in efficient power conversion and load control. The design manufactured based on Trench technology improves conduction efficiency and reduces energy loss, making it suitable for a variety of power-intensive electronic products.
**SUD35N10-26P-GE3-VB** is a high-efficiency N-type MOSFET in a TO252 package with excellent current carrying capability and low on-resistance. With a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 40A, this MOSFET is suitable for applications such as power management, load switching, and power regulation that require high current and high efficiency. Its on-resistance (RDS(ON)) is 35mΩ (@ VGS = 4.5V) and 30mΩ (@ VGS = 10V) at different gate-source voltages, which gives this MOSFET a significant advantage in efficient power conversion and load control. The design manufactured based on Trench technology improves conduction efficiency and reduces energy loss, making it suitable for a variety of power-intensive electronic products.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: SUD35N10-26P-GE3-VB
- **Package**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON)）**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
- **Model**: SUD35N10-26P-GE3-VB
- **Package**: TO252
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON)）**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
Product application areas and module examples
1. **Power management and DC-DC converter**:
SUD35N10-26P-GE3-VB performs well in power management systems, especially in DC-DC converter applications. Its low RDS(ON) characteristics enable it to efficiently convert voltages and reduce power losses during the conversion process. This MOSFET is widely used in power modules, battery chargers, LED driver power supplies and other devices that require efficient power management.
2. **Load switching and power regulation**:
Due to its high current carrying capacity and low on-resistance, SUD35N10-26P-GE3-VB is suitable for load switching and power regulation modules. Whether in industrial automation equipment or in consumer electronics such as smart homes and home appliances, this MOSFET can be used for efficient power switching and load management to ensure a stable current supply.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SUD35N10-26P-GE3-VB can provide efficient current control and voltage management, especially in the battery charging and discharging process of electric vehicles, battery energy storage devices and mobile devices, providing stable power output and protection functions to prevent overcharging and over-discharging.
4. **Automotive Electronics**:
SUD35N10-26P-GE3-VB has also been widely used in automotive electronics, especially in the power management modules of electric vehicles (EV) and hybrid electric vehicles (HEV). It can provide efficient current regulation and voltage conversion in the drive system, battery management system and DC-DC conversion module of electric vehicles, improve the energy efficiency of the entire system and reduce energy loss.
5. **Industrial and Smart Devices**:
This MOSFET can also be widely used in industrial equipment and smart electronic products, especially in scenarios that require fast switching and stable current control. It can provide efficient power management and ensure stable system operation in industrial motor drives, robot control systems, power distribution and power dispatching.
1. **Power management and DC-DC converter**:
SUD35N10-26P-GE3-VB performs well in power management systems, especially in DC-DC converter applications. Its low RDS(ON) characteristics enable it to efficiently convert voltages and reduce power losses during the conversion process. This MOSFET is widely used in power modules, battery chargers, LED driver power supplies and other devices that require efficient power management.
2. **Load switching and power regulation**:
Due to its high current carrying capacity and low on-resistance, SUD35N10-26P-GE3-VB is suitable for load switching and power regulation modules. Whether in industrial automation equipment or in consumer electronics such as smart homes and home appliances, this MOSFET can be used for efficient power switching and load management to ensure a stable current supply.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SUD35N10-26P-GE3-VB can provide efficient current control and voltage management, especially in the battery charging and discharging process of electric vehicles, battery energy storage devices and mobile devices, providing stable power output and protection functions to prevent overcharging and over-discharging.
4. **Automotive Electronics**:
SUD35N10-26P-GE3-VB has also been widely used in automotive electronics, especially in the power management modules of electric vehicles (EV) and hybrid electric vehicles (HEV). It can provide efficient current regulation and voltage conversion in the drive system, battery management system and DC-DC conversion module of electric vehicles, improve the energy efficiency of the entire system and reduce energy loss.
5. **Industrial and Smart Devices**:
This MOSFET can also be widely used in industrial equipment and smart electronic products, especially in scenarios that require fast switching and stable current control. It can provide efficient power management and ensure stable system operation in industrial motor drives, robot control systems, power distribution and power dispatching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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