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SUD35N10-26P-E3-VB Product details
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Product Introduction
**SUD35N10-26P-E3-VB** is a unipolar N-channel power MOSFET in TO252 package, designed using Trench technology, suitable for high-efficiency power management applications in the medium voltage range. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum drain current (ID) is 40A, the gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)) of 35mΩ (VGS = 4.5V) and 30mΩ (VGS = 10V). These features make it suitable for applications such as high-efficiency power conversion, battery management, and electric drive, and have significant advantages in reducing power loss and improving system efficiency.
**SUD35N10-26P-E3-VB** is a unipolar N-channel power MOSFET in TO252 package, designed using Trench technology, suitable for high-efficiency power management applications in the medium voltage range. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum drain current (ID) is 40A, the gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)) of 35mΩ (VGS = 4.5V) and 30mΩ (VGS = 10V). These features make it suitable for applications such as high-efficiency power conversion, battery management, and electric drive, and have significant advantages in reducing power loss and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ (VGS = 4.5V)
- 30mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ (VGS = 4.5V)
- 30mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
**SUD35N10-26P-E3-VB** is suitable for various types of DC-DC converters, especially in applications that require higher voltage and current handling capabilities, such as high-efficiency power supplies, solar inverters, battery-powered systems, etc. Its low on-resistance enables reduced power loss during the conversion process and improves overall conversion efficiency. It is particularly suitable for converting high voltage to low voltage for stable operation of equipment.
2. **Battery Management System (BMS)**:
In the battery management system (BMS), **SUD35N10-26P-E3-VB** can be used to control the charging and discharging process of the battery. It can withstand higher drain-source voltage (100V) and larger drain current (40A), making it suitable for electric vehicles (EV), hybrid electric vehicles (HEV) and other battery systems that require high current management. The low on-resistance of the MOSFET helps reduce heat generation and improve the charging and discharging efficiency of the battery.
3. **Electric vehicles and electric drive systems**:
In electric vehicles (such as electric cars and electric bicycles), **SUD35N10-26P-E3-VB** is widely used in battery management, motor drive and power conversion systems. Its high current carrying capacity (maximum 40A) and low on-resistance ensure the efficiency and stability of the motor drive, and improve the power performance and endurance of electric vehicles.
4. **Power management and conversion**:
**SUD35N10-26P-E3-VB** is suitable for a wide range of power management and conversion applications. Including UPS (uninterruptible power supply system), power conversion devices, power factor correction, etc. Its higher drain-source voltage and lower on-resistance enable it to effectively control the flow of power, reduce energy loss, and provide higher efficiency during high power conversion.
5. **Industrial Automation and Motor Control**:
In the field of industrial automation, **SUD35N10-26P-E3-VB** can be used as a power switching element for current control in motor drive systems. Whether in robots, power tools, or motor drives in automated production lines, this MOSFET can provide efficient switching performance to ensure stable and efficient operation of the motor.
6. **LED Drive and Lighting System**:
**SUD35N10-26P-E3-VB** is also suitable for LED drive and lighting systems, especially in applications requiring high efficiency and stability. By using this MOSFET, the LED drive power supply can provide stable current more efficiently, thereby extending the service life of the LED lamp, reducing heat accumulation and power loss, and is especially suitable for lighting systems with high power and high current requirements.
7. **Smart Home and Energy Management Systems**:
In smart home and energy management systems, **SUD35N10-26P-E3-VB** can be used as a power switching element for power conversion, energy management and battery energy storage systems. Due to its low on-resistance, it can significantly improve energy efficiency and help users better manage energy distribution, especially in smart grids, energy storage batteries and home appliance power management.
8. **Home Appliances and Consumer Electronics**:
In home appliances and consumer electronics, **SUD35N10-26P-E3-VB** is used in efficient power management modules, especially in high-power consumer electronics such as air conditioners, TVs, and audio systems. MOSFET can stably control current in power management modules to ensure efficient operation of equipment while reducing energy waste.
1. **DC-DC converter**:
**SUD35N10-26P-E3-VB** is suitable for various types of DC-DC converters, especially in applications that require higher voltage and current handling capabilities, such as high-efficiency power supplies, solar inverters, battery-powered systems, etc. Its low on-resistance enables reduced power loss during the conversion process and improves overall conversion efficiency. It is particularly suitable for converting high voltage to low voltage for stable operation of equipment.
2. **Battery Management System (BMS)**:
In the battery management system (BMS), **SUD35N10-26P-E3-VB** can be used to control the charging and discharging process of the battery. It can withstand higher drain-source voltage (100V) and larger drain current (40A), making it suitable for electric vehicles (EV), hybrid electric vehicles (HEV) and other battery systems that require high current management. The low on-resistance of the MOSFET helps reduce heat generation and improve the charging and discharging efficiency of the battery.
3. **Electric vehicles and electric drive systems**:
In electric vehicles (such as electric cars and electric bicycles), **SUD35N10-26P-E3-VB** is widely used in battery management, motor drive and power conversion systems. Its high current carrying capacity (maximum 40A) and low on-resistance ensure the efficiency and stability of the motor drive, and improve the power performance and endurance of electric vehicles.
4. **Power management and conversion**:
**SUD35N10-26P-E3-VB** is suitable for a wide range of power management and conversion applications. Including UPS (uninterruptible power supply system), power conversion devices, power factor correction, etc. Its higher drain-source voltage and lower on-resistance enable it to effectively control the flow of power, reduce energy loss, and provide higher efficiency during high power conversion.
5. **Industrial Automation and Motor Control**:
In the field of industrial automation, **SUD35N10-26P-E3-VB** can be used as a power switching element for current control in motor drive systems. Whether in robots, power tools, or motor drives in automated production lines, this MOSFET can provide efficient switching performance to ensure stable and efficient operation of the motor.
6. **LED Drive and Lighting System**:
**SUD35N10-26P-E3-VB** is also suitable for LED drive and lighting systems, especially in applications requiring high efficiency and stability. By using this MOSFET, the LED drive power supply can provide stable current more efficiently, thereby extending the service life of the LED lamp, reducing heat accumulation and power loss, and is especially suitable for lighting systems with high power and high current requirements.
7. **Smart Home and Energy Management Systems**:
In smart home and energy management systems, **SUD35N10-26P-E3-VB** can be used as a power switching element for power conversion, energy management and battery energy storage systems. Due to its low on-resistance, it can significantly improve energy efficiency and help users better manage energy distribution, especially in smart grids, energy storage batteries and home appliance power management.
8. **Home Appliances and Consumer Electronics**:
In home appliances and consumer electronics, **SUD35N10-26P-E3-VB** is used in efficient power management modules, especially in high-power consumer electronics such as air conditioners, TVs, and audio systems. MOSFET can stably control current in power management modules to ensure efficient operation of equipment while reducing energy waste.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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