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SUD25N04-25-T4-E3-VB Product details
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**SUD25N04-25-T4-E3-VB Product Introduction**
SUD25N04-25-T4-E3-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low voltage power supply systems. Its gate-source threshold voltage (Vth) is 2.5V, with low on-resistance (RDS(ON) = 12mΩ @VGS = 10V) and high current handling capability (ID = 55A). The use of Trench technology can provide lower switching losses and higher power conversion efficiency. SUD25N04-25-T4-E3-VB is widely used in high-efficiency power conversion, motor drives, DC-DC converters, and various electrical equipment that require high current handling.
SUD25N04-25-T4-E3-VB is a high-efficiency N-Channel MOSFET in TO252 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low voltage power supply systems. Its gate-source threshold voltage (Vth) is 2.5V, with low on-resistance (RDS(ON) = 12mΩ @VGS = 10V) and high current handling capability (ID = 55A). The use of Trench technology can provide lower switching losses and higher power conversion efficiency. SUD25N04-25-T4-E3-VB is widely used in high-efficiency power conversion, motor drives, DC-DC converters, and various electrical equipment that require high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**SUD25N04-25-T4-E3-VB Detailed Parameters**
- **Package Type**: TO252
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 40V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 14mΩ @VGS = 4.5V
- 12mΩ @VGS = 10V
- **Maximum Drain Current (ID)**: 55A
- **Technology Type**: Trench
- **Maximum Power Loss**: Low on-resistance and high current carrying capability, reducing power loss
- **Operating Temperature Range**: -55°C to 150°C
- **Heat dissipation**: Efficient heat dissipation for high current and high power applications
- **Package Type**: TO252
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 40V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 14mΩ @VGS = 4.5V
- 12mΩ @VGS = 10V
- **Maximum Drain Current (ID)**: 55A
- **Technology Type**: Trench
- **Maximum Power Loss**: Low on-resistance and high current carrying capability, reducing power loss
- **Operating Temperature Range**: -55°C to 150°C
- **Heat dissipation**: Efficient heat dissipation for high current and high power applications
Domain and module applications：
**Application fields and module examples**
1. **Power management and DC-DC converter**:
SUD25N04-25-T4-E3-VB is suitable for power management systems, especially in DC-DC converters. Due to its low on-resistance (RDS(ON) = 12mΩ @VGS = 10V), it can effectively reduce power loss during the conversion process and improve the overall efficiency of the system. This MOSFET is very suitable for applications that require efficient power conversion, such as high-efficiency power adapters, battery chargers, LED driver power supplies, automotive electronics, and portable devices.
2. **Motor drive and control**:
In motor drive systems, the high current carrying capacity (ID = 55A) of SUD25N04-25-T4-E3-VB makes it an ideal choice for brushless DC motor (BLDC) and stepper motor drive systems. Due to its low RDS(ON), this MOSFET can reduce the heat generated during motor control and improve the efficiency and response speed of motor drive. Suitable for power tools, electric vehicles, electric drones and other fields.
3. **Inverter and Power Conversion**:
SUD25N04-25-T4-E3-VB is also widely used in inverters and power conversion systems, especially in solar inverters and uninterruptible power supplies (UPS). This MOSFET provides high efficiency in high-power power conversion with its low on-resistance and high current handling capability, reduces energy loss, and optimizes the power output and stability of the system.
4. **Battery Management System (BMS)**:
In the battery management system, SUD25N04-25-T4-E3-VB can effectively control the charging and discharging process, which is particularly suitable for scenarios such as electric vehicles and battery energy storage systems that require high-efficiency current management. Its low on-resistance can significantly reduce power loss and improve system efficiency, while supporting large current flow to ensure battery health and efficient management.
5. **Consumer Electronics and Power Regulation**:
The MOSFET can also be used in power management systems for various consumer electronics products, such as portable devices, power tools, battery-powered systems, etc. Low power loss and high current carrying capacity enable it to improve the energy efficiency of the device and reduce heat generation, extending the life of the device and improving the user experience.
1. **Power management and DC-DC converter**:
SUD25N04-25-T4-E3-VB is suitable for power management systems, especially in DC-DC converters. Due to its low on-resistance (RDS(ON) = 12mΩ @VGS = 10V), it can effectively reduce power loss during the conversion process and improve the overall efficiency of the system. This MOSFET is very suitable for applications that require efficient power conversion, such as high-efficiency power adapters, battery chargers, LED driver power supplies, automotive electronics, and portable devices.
2. **Motor drive and control**:
In motor drive systems, the high current carrying capacity (ID = 55A) of SUD25N04-25-T4-E3-VB makes it an ideal choice for brushless DC motor (BLDC) and stepper motor drive systems. Due to its low RDS(ON), this MOSFET can reduce the heat generated during motor control and improve the efficiency and response speed of motor drive. Suitable for power tools, electric vehicles, electric drones and other fields.
3. **Inverter and Power Conversion**:
SUD25N04-25-T4-E3-VB is also widely used in inverters and power conversion systems, especially in solar inverters and uninterruptible power supplies (UPS). This MOSFET provides high efficiency in high-power power conversion with its low on-resistance and high current handling capability, reduces energy loss, and optimizes the power output and stability of the system.
4. **Battery Management System (BMS)**:
In the battery management system, SUD25N04-25-T4-E3-VB can effectively control the charging and discharging process, which is particularly suitable for scenarios such as electric vehicles and battery energy storage systems that require high-efficiency current management. Its low on-resistance can significantly reduce power loss and improve system efficiency, while supporting large current flow to ensure battery health and efficient management.
5. **Consumer Electronics and Power Regulation**:
The MOSFET can also be used in power management systems for various consumer electronics products, such as portable devices, power tools, battery-powered systems, etc. Low power loss and high current carrying capacity enable it to improve the energy efficiency of the device and reduce heat generation, extending the life of the device and improving the user experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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