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SUD19N20-90-E3-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
SUD19N20-90-E3-VB is a unipolar N-channel power MOSFET in TO252 package, based on advanced Trench technology, designed for efficient current transfer and low power loss. Its maximum drain-source voltage (VDS) is 200V, suitable for applications such as medium and high voltage power management, motor drive and load switching. With a maximum drain current (ID) of 30A, this MOSFET is capable of handling high current loads and maintaining low on-resistance (RDS(ON)). At VGS = 10V, RDS(ON) is 55mΩ, providing excellent current efficiency and reducing power loss in the system. The excellent performance of SUD19N20-90-E3-VB makes it suitable for a variety of power electronic devices that require high current and medium voltage control, especially in switching power supplies, DC-DC converters and power tools.
SUD19N20-90-E3-VB is a unipolar N-channel power MOSFET in TO252 package, based on advanced Trench technology, designed for efficient current transfer and low power loss. Its maximum drain-source voltage (VDS) is 200V, suitable for applications such as medium and high voltage power management, motor drive and load switching. With a maximum drain current (ID) of 30A, this MOSFET is capable of handling high current loads and maintaining low on-resistance (RDS(ON)). At VGS = 10V, RDS(ON) is 55mΩ, providing excellent current efficiency and reducing power loss in the system. The excellent performance of SUD19N20-90-E3-VB makes it suitable for a variety of power electronic devices that require high current and medium voltage control, especially in switching power supplies, DC-DC converters and power tools.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description**
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 55mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench technology (Trench MOSFET)
**Key parameter description:**
- **VDS (drain-source voltage)**: The maximum drain-source voltage is 200V, which is suitable for applications in medium and high voltage circuits and can handle voltages up to 200V.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, supporting a wide range of gate drive voltages and adapting to a variety of voltage control systems.
- **RDS(ON) (on-resistance)**: The on-resistance is 55mΩ (VGS = 10V), providing low power loss and efficient current transmission, reducing heat generation in the circuit.
- **ID (drain current)**: The maximum drain current is 30A, suitable for high current load control, providing reliable current carrying capacity.
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 55mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 30A
- **Technology**: Trench technology (Trench MOSFET)
**Key parameter description:**
- **VDS (drain-source voltage)**: The maximum drain-source voltage is 200V, which is suitable for applications in medium and high voltage circuits and can handle voltages up to 200V.
- **VGS (gate-source voltage)**: The maximum gate-source voltage is ±20V, supporting a wide range of gate drive voltages and adapting to a variety of voltage control systems.
- **RDS(ON) (on-resistance)**: The on-resistance is 55mΩ (VGS = 10V), providing low power loss and efficient current transmission, reducing heat generation in the circuit.
- **ID (drain current)**: The maximum drain current is 30A, suitable for high current load control, providing reliable current carrying capacity.
Domain and module applications：
3. **Application fields and module examples**
**1. Power management and load switch:**
SUD19N20-90-E3-VB is very suitable as a load switch in power management systems, especially in switch mode power supplies (SMPS) and high-efficiency power supply designs. Its low on-resistance (55mΩ) and high current carrying capacity (30A) enable it to have low power loss during power conversion, and is suitable for DC-DC converters, LED driver power supplies, and high-efficiency battery management systems. It can effectively improve the overall efficiency of the system and reduce energy waste.
**2. Motor drive and control:**
SUD19N20-90-E3-VB is suitable for motor drive systems, especially in the drive circuits of high-efficiency DC motors (DCM) or brushless DC motors (BLDC). Due to its high current carrying capacity (30A) and low RDS(ON), it can be used as a switching element to control the switching operation of the motor. This MOSFET can provide efficient motor drive performance and plays a key role in equipment such as power tools, home appliances and robotic systems.
**3. Switching Power Supplies and DC-DC Converters: **
In switching power supplies (SMPS) and DC-DC converters, SUD19N20-90-E3-VB can be used as an efficient switching element to help optimize energy conversion and power efficiency. Its low on-resistance enables the power converter to operate at high efficiency and is suitable for conversion applications of various voltage levels, including battery chargers, power adapters, and high-frequency switching power supplies.
**4. Battery Protection and Chargers: **
SUD19N20-90-E3-VB acts as a battery protection switch in the battery management system (BMS) to effectively control the charging and discharging process of the battery. Its low on-resistance and high current carrying capacity can ensure the safety of the battery during the charging process and prevent overcharging or over-discharging. It is particularly suitable for battery management and protection applications in power tools, portable devices, and electric vehicles.
**5. Power Conversion and Inverter Systems: **
SUD19N20-90-E3-VB can be used in power conversion systems and inverters, especially in solar inverters, electric vehicle chargers and other renewable energy applications. Its high current capability (30A) and low RDS(ON) can effectively reduce power loss and improve power conversion efficiency, making it widely used in inverters and power dispatching systems.
**Summary**:
SUD19N20-90-E3-VB is a high-efficiency N-channel power MOSFET suitable for power management, motor drive, battery protection and power conversion. With its low on-resistance (55mΩ @ VGS = 10V), high current carrying capability (30A) and excellent trench technology, the SUD19N20-90-E3-VB can provide efficient and reliable current control in high-power applications such as switching power supplies, DC-DC converters, and inverter systems, helping to improve overall system efficiency and performance.
**1. Power management and load switch:**
SUD19N20-90-E3-VB is very suitable as a load switch in power management systems, especially in switch mode power supplies (SMPS) and high-efficiency power supply designs. Its low on-resistance (55mΩ) and high current carrying capacity (30A) enable it to have low power loss during power conversion, and is suitable for DC-DC converters, LED driver power supplies, and high-efficiency battery management systems. It can effectively improve the overall efficiency of the system and reduce energy waste.
**2. Motor drive and control:**
SUD19N20-90-E3-VB is suitable for motor drive systems, especially in the drive circuits of high-efficiency DC motors (DCM) or brushless DC motors (BLDC). Due to its high current carrying capacity (30A) and low RDS(ON), it can be used as a switching element to control the switching operation of the motor. This MOSFET can provide efficient motor drive performance and plays a key role in equipment such as power tools, home appliances and robotic systems.
**3. Switching Power Supplies and DC-DC Converters: **
In switching power supplies (SMPS) and DC-DC converters, SUD19N20-90-E3-VB can be used as an efficient switching element to help optimize energy conversion and power efficiency. Its low on-resistance enables the power converter to operate at high efficiency and is suitable for conversion applications of various voltage levels, including battery chargers, power adapters, and high-frequency switching power supplies.
**4. Battery Protection and Chargers: **
SUD19N20-90-E3-VB acts as a battery protection switch in the battery management system (BMS) to effectively control the charging and discharging process of the battery. Its low on-resistance and high current carrying capacity can ensure the safety of the battery during the charging process and prevent overcharging or over-discharging. It is particularly suitable for battery management and protection applications in power tools, portable devices, and electric vehicles.
**5. Power Conversion and Inverter Systems: **
SUD19N20-90-E3-VB can be used in power conversion systems and inverters, especially in solar inverters, electric vehicle chargers and other renewable energy applications. Its high current capability (30A) and low RDS(ON) can effectively reduce power loss and improve power conversion efficiency, making it widely used in inverters and power dispatching systems.
**Summary**:
SUD19N20-90-E3-VB is a high-efficiency N-channel power MOSFET suitable for power management, motor drive, battery protection and power conversion. With its low on-resistance (55mΩ @ VGS = 10V), high current carrying capability (30A) and excellent trench technology, the SUD19N20-90-E3-VB can provide efficient and reliable current control in high-power applications such as switching power supplies, DC-DC converters, and inverter systems, helping to improve overall system efficiency and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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