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SUD09P10-195-GE3-VB Product details
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SUD09P10-195-GE3-VB is a single P-Channel MOSFET in TO252 package, designed for high-efficiency power management applications. It has a rated drain-source voltage of -100V and a maximum drain current of -8.8A. It is manufactured based on Trench technology and has a low on-resistance (RDS(ON)). The low on-resistance characteristic of this MOSFET makes it excel in applications requiring efficient current switching and power conversion. It is suitable for applications such as power management, load switching, reverse current protection, and is particularly widely used in low-voltage, high-current load control applications.
**
SUD09P10-195-GE3-VB is a single P-Channel MOSFET in TO252 package, designed for high-efficiency power management applications. It has a rated drain-source voltage of -100V and a maximum drain current of -8.8A. It is manufactured based on Trench technology and has a low on-resistance (RDS(ON)). The low on-resistance characteristic of this MOSFET makes it excel in applications requiring efficient current switching and power conversion. It is suitable for applications such as power management, load switching, reverse current protection, and is particularly widely used in low-voltage, high-current load control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | 250mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
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- **Package:** TO252
- **Configuration:** Single P-Channel
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):**
- 280mΩ @ VGS = 4.5V
- 250mΩ @ VGS = 10V
- **ID (maximum drain current):** -8.8A
- **Technology type:** Trench
- **Maximum power dissipation:** 35W
- **Operating temperature range:** -55°C to +150°C
- **Package type:** TO252, suitable for high power density applications.
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- **Package:** TO252
- **Configuration:** Single P-Channel
- **VDS (drain-source voltage):** -100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2V
- **RDS(ON) (on-resistance):**
- 280mΩ @ VGS = 4.5V
- 250mΩ @ VGS = 10V
- **ID (maximum drain current):** -8.8A
- **Technology type:** Trench
- **Maximum power dissipation:** 35W
- **Operating temperature range:** -55°C to +150°C
- **Package type:** TO252, suitable for high power density applications.
*
Domain and module applications：
*Application Examples:**
1. **Power Management and Load Switching:**
SUD09P10-195-GE3-VB is widely used in power management systems, especially in power switches, load switching, and load management modules. Due to its low on-resistance, it can effectively reduce heat loss and improve power conversion efficiency when controlling large currents to flow through the load, and is suitable for high-efficiency power modules.
2. **Reverse Current Protection:**
This MOSFET can be used in reverse current protection circuits, especially in situations where sensitive circuits need to be protected from reverse current. It can quickly cut off reverse current to avoid damage to the circuit. Common applications include battery management systems, solar inverters, and other situations where the system needs to be protected from reverse current.
3. **Battery Management System (BMS):**
In battery management systems, SUD09P10-195-GE3-VB is used as a switching element for battery charge and discharge management and protection circuits. Its low on-resistance and high efficiency characteristics help improve the efficiency and life of the battery, and are particularly suitable for battery protection modules in electric vehicles and portable electronic products.
4. **Inverter and Motor Drive:**
In inverter and motor drive systems, as an efficient power switch, SUD09P10-195-GE3-VB can control high current loads and provide smooth power conversion. Its low RDS(ON) characteristics help reduce power loss and ensure efficient operation of the system, and are particularly suitable for high-frequency inverters, motor drives, and power conversion applications.
1. **Power Management and Load Switching:**
SUD09P10-195-GE3-VB is widely used in power management systems, especially in power switches, load switching, and load management modules. Due to its low on-resistance, it can effectively reduce heat loss and improve power conversion efficiency when controlling large currents to flow through the load, and is suitable for high-efficiency power modules.
2. **Reverse Current Protection:**
This MOSFET can be used in reverse current protection circuits, especially in situations where sensitive circuits need to be protected from reverse current. It can quickly cut off reverse current to avoid damage to the circuit. Common applications include battery management systems, solar inverters, and other situations where the system needs to be protected from reverse current.
3. **Battery Management System (BMS):**
In battery management systems, SUD09P10-195-GE3-VB is used as a switching element for battery charge and discharge management and protection circuits. Its low on-resistance and high efficiency characteristics help improve the efficiency and life of the battery, and are particularly suitable for battery protection modules in electric vehicles and portable electronic products.
4. **Inverter and Motor Drive:**
In inverter and motor drive systems, as an efficient power switch, SUD09P10-195-GE3-VB can control high current loads and provide smooth power conversion. Its low RDS(ON) characteristics help reduce power loss and ensure efficient operation of the system, and are particularly suitable for high-frequency inverters, motor drives, and power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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