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SUB85N10-10-GE3-VB Product details
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**SUB85N10-10-GE3-VB Product Introduction**
SUB85N10-10-GE3-VB is a high-efficiency N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and the maximum gate-source voltage (VGS) is ±20V. It uses Trench technology and has excellent switching performance and low on-resistance (RDS(ON)). The maximum drain current (ID) of this MOSFET is 100A, which is suitable for applications requiring high current and high efficiency such as high-power switching, power conversion and motor control. The low on-resistance of SUB85N10-10-GE3-VB enables it to provide high efficiency under high current and high load conditions, reduce power loss and heat generation, ensure long-term and stable operation of the equipment, and is widely used in power management, motor drive, inverter, charging system and other fields.
SUB85N10-10-GE3-VB is a high-efficiency N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 100V, and the maximum gate-source voltage (VGS) is ±20V. It uses Trench technology and has excellent switching performance and low on-resistance (RDS(ON)). The maximum drain current (ID) of this MOSFET is 100A, which is suitable for applications requiring high current and high efficiency such as high-power switching, power conversion and motor control. The low on-resistance of SUB85N10-10-GE3-VB enables it to provide high efficiency under high current and high load conditions, reduce power loss and heat generation, ensure long-term and stable operation of the equipment, and is widely used in power management, motor drive, inverter, charging system and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**SUB85N10-10-GE3-VB Detailed Parameters**
- **Package Type**: TO263
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 100V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 23mΩ @VGS = 4.5V
- 10mΩ @VGS = 10V
- **Maximum Drain Current (ID)**: 100A
- **Technology Type**: Trench
- **Switching Frequency**: Suitable for high frequency switching circuits
- **Maximum Power Loss**: Provides low on-resistance and efficient power conversion
- **Heat dissipation**: Excellent heat dissipation capability, suitable for high power applications
- **Package Type**: TO263
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 100V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Gate-Source Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 23mΩ @VGS = 4.5V
- 10mΩ @VGS = 10V
- **Maximum Drain Current (ID)**: 100A
- **Technology Type**: Trench
- **Switching Frequency**: Suitable for high frequency switching circuits
- **Maximum Power Loss**: Provides low on-resistance and efficient power conversion
- **Heat dissipation**: Excellent heat dissipation capability, suitable for high power applications
Domain and module applications：
**Application fields and module examples**
1. **Power management and DC-DC converter**:
SUB85N10-10-GE3-VB is suitable for various power management applications, especially DC-DC converters and voltage regulator modules. Its low on-resistance (RDS(ON) = 10mΩ @VGS = 10V) and high current carrying capacity (ID = 100A) make it excellent in high-efficiency power conversion, which can reduce power loss and improve system efficiency. Common applications include high-efficiency power adapters, battery chargers, LED driver power supplies, and computer power systems.
2. **Motor drive and control**:
In motor control and drive systems, SUB85N10-10-GE3-VB provides powerful switching capabilities, especially for brushless DC motors (BLDC) and stepper motor drives. Its ultra-low on-resistance and high current capability can ensure the efficient operation of motor control systems, and are widely used in power tools, electric vehicles, electric drones and other fields.
3. **Inverters and High-Efficiency Power Supplies**:
SUB85N10-10-GE3-VB is ideal for high-efficiency inverter systems, especially in solar inverters and uninterruptible power supplies (UPS). Due to its excellent switching characteristics and low power loss, this MOSFET can provide stable power conversion under high current loads and is widely used in renewable energy systems, energy storage systems, and industrial power supplies.
4. **Battery Management System (BMS)**:
In battery management systems such as electric vehicles and energy storage systems, the SUB85N10-10-GE3-VB MOSFET can effectively control the charging and discharging process of the battery to ensure that the battery operates under efficient and stable conditions. Its low on-resistance and high current capability make it particularly suitable for high-power battery protection and battery current control, which are commonly found in electric vehicles, smart grid energy storage, and portable battery devices.
5. **Consumer Electronics and Efficient Power Conversion**:
SUB85N10-10-GE3-VB MOSFET is also widely used in power conversion and power regulation of consumer electronics. For example, in portable devices, home appliance power supplies and battery chargers, SUB85N10-10-GE3-VB provides efficient and low-power power conversion, reduces system heat generation and improves the overall energy efficiency of the device.
Through its excellent electrical characteristics and low power performance, SUB85N10-10-GE3-VB MOSFET provides efficient and stable solutions in multiple fields, ensuring that the system can still maintain excellent power conversion efficiency under high current load, reducing energy loss and improving the performance and reliability of the overall system.
1. **Power management and DC-DC converter**:
SUB85N10-10-GE3-VB is suitable for various power management applications, especially DC-DC converters and voltage regulator modules. Its low on-resistance (RDS(ON) = 10mΩ @VGS = 10V) and high current carrying capacity (ID = 100A) make it excellent in high-efficiency power conversion, which can reduce power loss and improve system efficiency. Common applications include high-efficiency power adapters, battery chargers, LED driver power supplies, and computer power systems.
2. **Motor drive and control**:
In motor control and drive systems, SUB85N10-10-GE3-VB provides powerful switching capabilities, especially for brushless DC motors (BLDC) and stepper motor drives. Its ultra-low on-resistance and high current capability can ensure the efficient operation of motor control systems, and are widely used in power tools, electric vehicles, electric drones and other fields.
3. **Inverters and High-Efficiency Power Supplies**:
SUB85N10-10-GE3-VB is ideal for high-efficiency inverter systems, especially in solar inverters and uninterruptible power supplies (UPS). Due to its excellent switching characteristics and low power loss, this MOSFET can provide stable power conversion under high current loads and is widely used in renewable energy systems, energy storage systems, and industrial power supplies.
4. **Battery Management System (BMS)**:
In battery management systems such as electric vehicles and energy storage systems, the SUB85N10-10-GE3-VB MOSFET can effectively control the charging and discharging process of the battery to ensure that the battery operates under efficient and stable conditions. Its low on-resistance and high current capability make it particularly suitable for high-power battery protection and battery current control, which are commonly found in electric vehicles, smart grid energy storage, and portable battery devices.
5. **Consumer Electronics and Efficient Power Conversion**:
SUB85N10-10-GE3-VB MOSFET is also widely used in power conversion and power regulation of consumer electronics. For example, in portable devices, home appliance power supplies and battery chargers, SUB85N10-10-GE3-VB provides efficient and low-power power conversion, reduces system heat generation and improves the overall energy efficiency of the device.
Through its excellent electrical characteristics and low power performance, SUB85N10-10-GE3-VB MOSFET provides efficient and stable solutions in multiple fields, ensuring that the system can still maintain excellent power conversion efficiency under high current load, reducing energy loss and improving the performance and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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